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Hexagonal boron nitride (hBN) is drawing increasing attention as an insulator and substrate material to develop next generation graphene-based electronic devices. In this paper, we investigate the quantum transport in heterostructures…

介观与纳米尺度物理 · 物理学 2015-06-30 Y. Zhao , Z. Wan , X. Xu , S. R. Patil , U. Hetmaniuk , M. P. Anantram

Emergent color centers with accessible spins hosted by van der Waals materials have attracted substantial interest in recent years due to their significant potential for implementing transformative quantum sensing technologies. Hexagonal…

Metal nanostructures confined between sp2 hybridized 2D materials and solid supports are attracting attention for their potential application in new nanotechnologies. Model studies under well-defined conditions are valuable for…

We find, with the use of first-principles calculations, that a single-atom-thick boron-nitride (BN) sheet exhibits an unusual nonlinear electromechanical effect: it becomes macroscopically polarized when bent out-of-plane. The direction of…

材料科学 · 物理学 2008-10-13 Ivan Naumov , Alexander M. Bratkovsky , V. Ranjan

The growth of monolayer hexagonal boron nitride (h-BN) on Ir(110) through low-pressure chemical vapor deposition is investigated using low energy electron diffraction and scanning tunneling microscopy. We find that the growth of aligned…

材料科学 · 物理学 2024-02-16 Thomas Michely , Jason Bergelt , Affan Safeer , Alexander Bäder , Tobias Hartl , Jeison Fischer

Hexagonal boron nitride (hBN) is a large band gap layered crystal, frequently incorporated in van der Waals (vdW) heterostructures as an insulating or tunnel barrier. Localised states with energies within its band gap can emit visible…

Magnetism in 2D atomic sheets has attracted considerable interest as its existence could allow the development of electronic and spintronic devices. The existence of magnetism is not sufficient for devices, however, as states must be…

Boron nitride (BN) is a structurally versatile insulator since it can be found in several crystalline structures with interesting mechanical and electrical properties, making this material attractive for technological applications. Seeking…

A theory is developed for calculating vertical tunneling current between two sheets of bilayer graphene separated by a thin, insulating layer of hexagonal boron nitride, neglecting many-body effects. Results are presented using physical…

介观与纳米尺度物理 · 物理学 2015-09-16 Sergio C. de la Barrera , Randall M. Feenstra

Hexagonal boron nitride (h-BN) is an important insulating substrate for two-dimensional (2D) heterostructure devices and possesses high dielectric strength comparable to SiO2. Here, we report two clear differences in their physical…

材料科学 · 物理学 2018-07-19 Yoshiaki Hattori , Takashi Taniguchi , Kenji Watanabe , Kosuke Nagashio

This study investigates the thermal expansion coefficient of two-dimensional (2D) functionalized boron nitride (f-BN) materials using first-principles density functional theory (DFT). Two-dimensional materials, particularly hexagonal boron…

The electronic and optical properties of 2D hexagonal boron nitride are studied using first principle calculations. GW and BSE methods are employed in order to predict with better accuracy the excited and excitonic properties of this…

介观与纳米尺度物理 · 物理学 2019-02-20 F. Ferreira , A. J. Chaves , N. M. R. Peres , R. M. Ribeiro

Thin adhesive films can be removed from substrates, torn, and folded in distinct geometries under external driving forces. In two-dimensional materials, however, these processes can be self-driven as shown in previous studies on folded…

介观与纳米尺度物理 · 物理学 2019-07-15 Johannes C. Rode , Dawei Zhai , Christopher Belke , Sung J. Hong , Hennrik Schmidt , Nancy Sandler , Rolf J. Haug

Spontaneous orbital magnetism observed in twisted bilayer graphene (tBG) on nearly aligned hexagonal boron nitride (BN) substrate builds on top of the electronic structure resulting from combined G/G and G/BN double moire interfaces. Here…

介观与纳米尺度物理 · 物理学 2021-02-24 Jiseon Shin , Youngju Park , Bheema Lingam Chittari , Jeil Jung

The stacking order and twist angle provide abundant opportunities for engineering band structures of two-dimensional materials, including the formation of moire bands, flat bands, and topologically nontrivial bands. The inversion symmetry…

A new dislocation structure-square-octagon pair (4|8) is discovered in two-dimensional boron nitride (h-BN), via first-principles calculations. It has lower energy than corresponding pentagon-heptagon pairs (5|7), which contain unfavorable…

材料科学 · 物理学 2012-08-02 Yuanyue Liu , Xiaolong Zou , Boris I. Yakobson

Machine learning has emerged as a potent computational tool for expediting research and development in solid oxide fuel cell electrodes. The effective application of machine learning for performance prediction requires transforming…

材料科学 · 物理学 2025-03-19 Maksym Szemer , Szymon Buchaniec , Tomasz Prokop , Grzegorz Brus

Dielectric breakdown has historically been of great interest from the perspectives of fundamental physics and electrical reliability. However, to date, the anisotropy in the dielectric breakdown has not been discussed. Here, we report an…

材料科学 · 物理学 2016-11-01 Yoshiaki Hattori , Takashi Taniguchi , Kenji Watanabe , Kosuke Nagashio

The twisted hexagonal boron nitride (hBN) bilayer has demonstrated exceptional properties, particularly the existence of electronic flat bands without needing a magic angle, suggesting strong excitonic effects. Therefore, a systematic…

When single-layer h-BN is subjected to a high-energy electron beam, triangular pores with nitrogen edges are formed. Because of the broken sp2 bonds, these pores are known to possess magnetic states. We report on the magnetism and…

材料科学 · 物理学 2022-09-22 Mehmet Dogan , Marvin L. Cohen