相关论文: Atomic layer etching of niobium nitride using sequ…
Lithium niobate (LiNbO$_3$, LN) is a ferroelectric crystal of interest for integrated photonics owing to its large second-order optical nonlinearity and the ability to impart periodic poling via an external electric field. However, on-chip…
We report the isotropic plasma atomic layer etching (ALE) of aluminum nitride using sequential exposures of SF$_6$ plasma and trimethylaluminum (Al(CH$_3$)$_3$, TMA). ALE was observed at temperatures greater than 200 $^\circ$C, with a…
Microwave loss in superconducting titanium nitride (TiN) films is attributed to two-level systems in various interfaces arising in part from oxidation and microfabrication-induced damage. Atomic layer etching (ALE) is an emerging…
Lithium niobate (LiNbO$_3$, LN) is a nonlinear optical material of high interest for integrated photonics with applications ranging from optical communications to quantum information processing. The performance of on-chip devices based on…
In the relentless pursuit of advancing semiconductor technologies, the demand for atomic layer processes has given rise to innovative processes, which have already played a significant role in the continued miniaturization features. Among…
Niobium nitride (NbN) is a useful material for fabricating detectors because of its high critical temperature and relatively high kinetic inductance. In particular, NbN can be used to fabricate nanowire detectors and mm-wave transmission…
On-chip photonic devices based on SiO$_2$ are of interest for applications such as microresonator gyroscopes and microwave sources. Although SiO$_2$ microdisk resonators have achieved quality factors exceeding one billion, this value…
Laser nitriding represents a versatile approach for tailoring the surface properties of metals. Up to now, its effect on the superconducting response of niobium nitrides remains largely unexplored. In this work, the nitriding process of…
The high frequency performance and yield of III-V semiconductor devices such as InP HEMTs is negatively impacted by subsurface etch damage and non-uniform etch depth over the wafer. Atomic layer etching (ALE) has the potential to overcome…
High-quality ultra-thin films of niobium nitride (NbN) are developed by plasma-enhanced atomic layer deposition (PEALD) technique. Superconducting nanowire single-photon detectors (SNSPDs) patterned from this material exhibit high switching…
We report the first plasma atomic layer etching (ALE) process for diamond using a cyclic plasma sequence composed of two separated steps: oxygen surface modification and krypton ion removal. The process is implemented in an inductively…
We report on the development and application of an atomic layer etching (ALE) procedure based on alternating exposures of trimethylaluminum and anhydrous hydrogen fluoride (HF) implemented to controllably etch aluminum oxide. Our ALE…
In the rapidly evolving field of quantum computing, niobium nitride (NbN) superconductors have emerged as integral components due to their unique structural properties, including a high superconducting transition temperature (Tc),…
Aluminum nitride (AlN) is an extremely promising material for integrated photonics because of the combination of strong \c{hi}2 and \c{hi}3 nonlinearities. However, the intrinsic hardness of the material and charging effects during electron…
The understanding of the Ar/Cl2 plasma etching mechanism is crucial for the desired modification of inner surface of the three dimensional niobium (Nb) superconductive radio frequency cavities. Uniform mass removal in cylindrical shaped…
We report a reproducible technique for the fabrication of sharp superconducting Nb tips for scanning tunneling microscopy (STM) and scanning tunneling spectroscopy. Sections of Nb wire with 250 $\mu$m diameter are dry etched in an SF$_6$…
The main goal of this research was to determine the key reagents during the highly Si3N4/SiO2 selective etching. The experiments were conducted, where both Si3N4 and SiO2 samples were etched by NF3/O2 and NF3/O2/N2/H2 plasmas. The sources…
A method to treat the surface of Nb is described which potentially can improve the performance of superconducting RF cavities. We present tunneling and x-ray photoemission spectroscopy (XPS) measurements at the surface of cavity-grade…
The development of large-scale quantum processors benefits from superconducting qubits that can operate at elevated temperatures and be fabricated with scalable, foundry-compatible processes. Atomic layer deposition (ALD) is increasingly…
This study presents a comprehensive investigation into the exceptional superconducting attributes of titanium nitride (TiN) achieved through plasma-enhanced atomic layer deposition (PEALD) on both planar and intricate three-dimensional (3D)…