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相关论文: Quantum Emitters in Flux Grown hBN

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Quantum emitters in hexagonal Boron Nitride (hBN) were recently reported to hol a homogeneous linewidth according to the Fourier-Transform limit up to room temperature. This unusual observation was traced back to decoupling from in-plane…

Color centers in hexagonal boron nitride (hBN) are promising candidates as quantum light sources for future technologies. In this work, we utilize a scattering-type near-field optical microscope (s-SNOM) to study the photoluminescence (PL)…

Hexagonal boron nitride (hBN)-long-known as a thermally stable ceramic-is now available as atomically smooth, single-crystalline flakes, revolutionizing its use in optoelectronics. For nanophotonics, these flakes offer strong…

Hexagonal boron nitride (hBN) is gaining interest as a wide bandgap van der Waals host of optically active spin defects for quantum technologies. Most studies of the spin-photon interface in hBN focus on the negatively charged boron vacancy…

We analyze the optical, chemical, and electrical properties of chemical vapor deposition (CVD) grown hexagonal boron nitride (h-BN) using the precursor ammonia-borane ($H_3N-BH_3$) as a function of $Ar/H_2$ background pressure ($P_{TOT}$).…

Boron vacancies (VB${^-}$) in hexagonal boron-nitride (hBN) have sparked great interest in recent years, due to their electronic spin properties. Since hBN can be readily integrated into devices where it interfaces a huge variety of other…

Hexagonal boron nitride (h-BN), one of the hallmark van der Waals (vdW) layered crystals with an ensemble of attractive physical properties, is playing increasingly important roles in exploring two-dimensional (2D) electronics, photonics,…

介观与纳米尺度物理 · 物理学 2020-01-07 Yanan Wang , Jaesung Lee , Xu-Qian Zheng , Yong Xie , Philip X. -L. Feng

Monolayer hexagonal boron nitride (hBN) has recently become the focus of intense research as a material to host quantum emitters. Although it is well known that such emission is associated with point defects, so far no conclusive…

We report on picosecond UV-laser processing of hexagonal boron nitride (hBN) at moderately high pressures above 500 bar. The main effect is specific to the ambient gas and laser pulse duration in the ablation regime: when samples are…

Hexagonal boron nitride (h-BN) is a promising two-dimensional insulator with a large band gap and low density of charged impurities that is isostructural and isoelectronic with graphene. Here we report the chemical and atomic-scale…

In this paper, we present an experimental study of $\text{L1}_0$-FePt granular films with crystalline/amorphous boron nitride (BN) grain boundary materials for heat assisted magnetic recording (HAMR). It is found that an adequate RF…

材料科学 · 物理学 2023-07-11 Chengchao Xu , B. S. D. Ch. S Varaprasad , David E. Laughlin , Jian-Gang , Zhu

Hexagonal boron nitride is a promising material for many applications ranging from deep UV emission to an ideal substrate for other two dimensional crystals. Although efforts towards the growth of wafer-scale, high quality material strongly…

Color centered-based single photon emitters in hexagonal boron nitride (h-BN) have shown promising photophysical properties as sources for quantum light emission. Despite significant advances towards such a goal, achieving lifetime-limited…

Quantum emitters in layered materials are promising candidates for applications in nanophotonics. Here we present a technique based on charge transfer to graphene for measuring the charge transition levels ($\rm E_t$) of fluorescent defects…

材料科学 · 物理学 2019-07-02 Zai-Quan Xu , Noah Mendelson , John A. Scott , Chi Li , Igor Aharonovich , Milos Toth

Solid-state quantum emitters are garnering a lot of attention due to their role in scalable quantum photonics. A notable majority of these emitters, however, exhibit spectral diffusion due to local, fluctuating electromagnetic fields. In…

Hexagonal boron nitride (hBN) has emerged as a significant material for quantum sensing, particularly due to its ability to host spin active defects, such as the negatively charged boron vacancy (V$_\mathrm{B}^-$ center). The optical…

量子物理 · 物理学 2025-11-04 András Tárkányi , Viktor Ivády

Defects in hexagonal boron nitride (hBN), a two-dimensional van der Waals material, have raised wide range interest for its potential in various quantum applications. Due to hBN's 2D nature, spin center in hBN can be engineered in close…

介观与纳米尺度物理 · 物理学 2024-04-26 Lingnan Shen , Di Xiao , Ting Cao

Color centers in hexagonal boron nitride (hBN) show stable single photon emission even at room temperature, making these systems a promising candidate for quantum information applications. Besides this remarkable property, also their…

介观与纳米尺度物理 · 物理学 2021-02-19 Daniel Groll , Thilo Hahn , Paweł Machnikowski , Daniel Wigger , Tilmann Kuhn

The production of high-quality two-dimensional (2D) materials is essential for the ultimate performance of single layers and their hybrids. Hexagonal boron nitride (h-BN) is foreseen to become the key 2D hybrid and packaging material since…

Optically-active spin defects in hexagonal boron nitride (hBN) are promising quantum systems for the design of two-dimensional quantum sensing units offering optimal proximity to the sample being probed. In this work, we first demonstrate…

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