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相关论文: Inducing Spin Splitting and Anomalous Valley Hall …

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Superior to ferromagnetic (FM) materials, antiferromagnetic (AFM) materials do not have any net magnetic moment and are robust to external magnetic perturbation with ultra-high dynamic speed. To achieve spontaneous valley polarization and…

材料科学 · 物理学 2024-04-30 San-Dong Guo , Liguo Zhang , Yiwen Zhang , Guangzhao Wang

The antiferromagnetic (AFM) valleytronics can be intrinsically more energy-saving and fast-operating in device applications. In general, the lacking spontaneous spin-splitting hinders the implementation and detection of anomalous valley…

材料科学 · 物理学 2024-07-25 Dun-Cheng Liang , San-Dong Guo , Shaobo Chen

The combination of antiferromagnetic (AFM) spintronics and anomalous valley Hall effect (AVHE) is of great significance for potential applications in valleytronics. Here, we propose a design principle for achieving AVHE in A-type hexagonal…

材料科学 · 物理学 2023-12-13 San-Dong Guo , Yu-Ling Tao , Zi-Yang Zhuo , Gangqiang Zhu , Yee Sin Ang

Antiferromagnetic (AFM) spintronics provides a route towards energy-efficient and ultrafast device applications. Achieving anomalous valley Hall effect (AVHE) in AFM monolayers is thus of considerable interest for both fundamental condensed…

介观与纳米尺度物理 · 物理学 2023-11-22 San-Dong Guo , Wei Xu , Yang Xue , Gangqiang Zhu , Yee Sin Ang

Exploring combination of antiferromagnetic (AFM) spintronics and anomalous valley Hall effect (AVHE) is one of the most important questions for valleytronic applications. The key to address this issue is to achieve spin splitting around the…

材料科学 · 物理学 2024-05-30 San-Dong Guo , Liguo Zhang , Xiao-Shu Guo , Gangqiang Zhu

The integration of ferroelectric (FE) and antiferromagnetic (AFM) orders in twodimensional (2D) materials provides a promising avenue for the nonvolatile control of coupled spin and valley degrees of freedom, a capability central to…

介观与纳米尺度物理 · 物理学 2026-05-07 Quan Shen , Wenhu Liao , Degao Xu , Jiansheng Dong , Jianing Tan

Superior to ferromagnetic (FM) valleytronics, antiferromagnetic (AFM) counterpart exhibits ultradense and ultrafast potential due to their intrinsic advantages of zero stray field, terahertz dynamics, and compensated moment of…

材料科学 · 物理学 2024-11-12 San-Dong Guo , Ping Li , Guangzhao Wang

The antiferromagnetic (AFM) materials are robust to external magnetic perturbation due to missing any net magnetic moment. In general, the spin splitting in the band structures disappears in these antiferromagnets. However, the…

材料科学 · 物理学 2023-07-12 San-Dong Guo

Compared to the ferromagnetic materials that realize the anomalous valley Hall effect by breaking time-reversal symmetry and spin-orbit coupling, the antiferromagnetic materials with the joint spatial inversion and time-reversal (PT)…

材料科学 · 物理学 2024-11-12 Yiding Wang , Hanbo Sun , Chao Wu , Weixi Zhang , San-Dong Guo , Yanchao She , Ping Li

Altermagnetism, as a new category of collinear magnetism distinct from traditional ferromagnetism and antiferromagnetism, exhibits the spin splitting without net magnetization. Currently, researchers are focus on searching three-dimensional…

材料科学 · 物理学 2025-02-26 Hanbo Sun , Pengqiang Dong , Chao Wu , Ping Li

The interplay between magnetism and topological electronic structure offers a large freedom to design strong anomalous Hall effect (AHE) materials. A nodal line from band inversion is a typical band structure to generate strong AHE.…

材料科学 · 物理学 2021-10-04 Congcong Le , Claudia Felser , Yan Sun

Anomalous Hall effect (AHE), a protocol of various low-power dissipation quantum phenomena and a fundamental precursor of intriguing topological phases of matter, is usually observed in ferromagnetic materials with orthogonal configuration…

介观与纳米尺度物理 · 物理学 2023-04-27 Jin Cao , Wei Jiang , Xiao-Ping Li , Daifeng Tu , Jiadong Zhou , Jianhui Zhou , Yugui Yao

The spontaneous Hall effect, corresponding to a zero-field anomalous Hall effect (AHE), is induced by symmetry breaking associated with ferromagnetism. Studies in recent years, however, have revealed that antiferromagnetic (AFM) states…

Large intrinsic anomalous Hall effect (AHE) due to the Berry curvature in magnetic topological semimetals is attracting enormous interest due to its fundamental importance and technological relevance. Mechanisms resulting in large intrinsic…

The anomalous Hall effect (AHE), typically observed in ferromagnetic (FM) metals with broken time-reversal symmetry, depends on electronic and magnetic properties. In Co$_{3}$Sn$_{2-x}$In$_{x}$S$_{2}$, a giant AHE has been attributed to…

Berry curvature is ubiquitous in condensed matter physics and materials science. Its main consequence is the intrinsic anomalous Hall effect (AHE) in magnetic materials and plays a pivotal role in spintronic applications and quantum…

材料科学 · 物理学 2026-05-07 Satoshi Okamoto , Adriana Moreo , Naoto Nagaosa , Stuart S. P. Parkin

The generation and control of spin- and valley-polarization in antiferromagnets (AFMs) have garnered increasing attention due to their potential for enabling faster and more stable multifunctional spintronic and valleytronic memory and…

介观与纳米尺度物理 · 物理学 2025-07-08 Jiaqi Feng , Xiaodong Zhou , Jingyan Chen , Meiling Xu , Xiuxian Yang , Yinwei Li

While ferromagnets have been known and exploited for millennia, antiferromagnets (AFMs) were only discovered in the 1930s. The elusive nature indicates AFMs' unique properties: At large scale, due to the absence of global magnetization,…

Exploiting the valley degree of freedom introduces a novel paradigm for advancing quantum information technology. Currently, the investigation on spontaneous valley polarization mainly focuses on two major types of systems. One type…

材料科学 · 物理学 2025-06-12 Yanchao She , Yiding Wang , Hanbo Sun , Chao Wu , Weixi Zhang , Ping Li

Anomalous Hall effect (AHE) is a fundamental spin-dependent transport property that is widely used in spintronics. It is generally expected that currents carrying net spin polarization are required to drive the AHE. Here we demonstrate…

介观与纳米尺度物理 · 物理学 2022-11-30 Ding-Fu Shao , Shu-Hui Zhang , Rui-Chun Xiao , Zi-An Wang , W. J. Lu , Y. P. Sun , Evgeny Y. Tsymbal
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