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The combination of optical tweezer arrays with strong interactions -- via dipole-exchange of molecules and van-der-Waals interactions of Rydberg atoms -- has opened the door for the exploration of a wide variety of quantum spin models. A…

Inspired by the recent experimental advances in cold atom quantum simulators, we explore the experimentally implemented bosonic $t$-$t'$-$J$ model on the square lattice using large-scale density matrix renormalization group simulations. By…

强关联电子 · 物理学 2026-03-06 Xin Lu , Jia-Xin Zhang , Lukas Homeier , Shou-Shu Gong , D. N. Sheng , Zheng-Yu Weng

Recent advances in Rydberg tweezer arrays bring novel opportunities for programmable quantum simulations beyond previous capabilities. In this work, we investigate a bosonic t-J-V model currently realized with Rydberg atoms. Through…

量子气体 · 物理学 2026-01-05 Kuangjie Chen , Yang Qi , Zheng Yan , Xiaopeng Li

Unraveling the microscopic mechanisms governing the physics of doped quantum magnets is key to advancing our understanding of strongly correlated quantum matter. Quantum simulation platforms, e.g., ultracold atoms in optical lattices or…

量子气体 · 物理学 2024-12-04 Timothy J. Harris , Ulrich Schollwöck , Annabelle Bohrdt , Fabian Grusdt

We reinvestigate a doped antiferromagnetic Mott insulator based on the slave-fermion approach of the t-J model, where antiferromagnetic spin fluctuations and doped holes are described by bosonic spinons and fermionic holons, respectively.…

强关联电子 · 物理学 2008-11-18 Chenglong Jia , Ki-Seok Kim

We apply the fermionic tensor network (TN) state method to understand the strongly correlated nature in a doped Mott insulator. We conduct a comparative study of the $\sigma t$-$J$ model, in which the no-double-occupancy constraint remains…

强关联电子 · 物理学 2025-12-19 Wayne Zheng , Jia-Xin Zhang , Zheng-Yuan Yue , Zheng-Cheng Gu , Zheng-Yu Weng

The pairing mechanism in doped antiferromagnets is essential for understanding high-temperature superconductivity. In this work, we investigate the pairing mechanism in bosonic doped antiferromagnets via large-scale density matrix…

强关联电子 · 物理学 2025-12-17 Hao-Kai Zhang , Jia-Xin Zhang , Ji-Si Xu , Hong-Chen Jiang , Zheng-Yu Weng

We study the single hole tt't''J-model numerically to address the momentum space anisotropy found in doped Mott insulators. A simple two band picture to understand how the doped hole is screened by the spin background in states of different…

强关联电子 · 物理学 2007-05-23 Tiago C. Ribeiro

Understanding pairing in the strong-coupling regime of doped Mott insulators remains an open problem in the context of cuprate superconductors. We perform ultra-high resolution numerical simulations of spectral functions in the highly…

强关联电子 · 物理学 2026-03-16 Pit Bermes , Sebastian Paeckel , Annabelle Bohrdt , Lukas Homeier , Fabian Grusdt

In the present paper, we study a system of doped antiferromagnet in three dimensions at finite temperatures by using the t-J model, a canonical model of strongly-correlated electrons. We employ the slave-fermion representation of electrons…

强关联电子 · 物理学 2011-03-21 Akihiro Shimizu , Koji Aoki , Kazuhiko Sakakibara , Ikuo Ichinose , Tetsuo Matsui

Microscopically understanding competing orders in strongly correlated systems is a key challenge in modern quantum many-body physics. For example, the study of magnetic polarons and their relation to pairing in the Fermi-Hubbard model in…

强关联电子 · 物理学 2024-10-02 Henning Schlömer , Ulrich Schollwöck , Annabelle Bohrdt , Fabian Grusdt

We study the effects of hole doping on one-dimensional Mott insulators with orbital degrees of freedom. We describe the system in terms of a generalized t-J model. At a specific point in parameter space the model becomes integrable in…

强关联电子 · 物理学 2009-01-08 J. Sirker , J. Damerau , A. Klümper

A family of models is proposed to describe the motion of holes in a fluctuating quantum dimer background on the square lattice. Following Castelnovo et al. [Ann. Phys. (NY) 318, 316 (2005)], a generalized Rokhsar-Kivelson Hamiltonian at…

强关联电子 · 物理学 2009-11-11 Didier Poilblanc , Fabien Alet , Federico Becca , Arnaud Ralko , Fabien Trousselet , Frederic Mila

It is generally accepted that doped Mott insulators can be well characterized by the t-J model. In the t-J model, the electron fractionalization is dictated by the phase string effect. We found that in the underdoped regime, the…

强关联电子 · 物理学 2012-01-18 Peng Ye , Chu-Shun Tian , Xiao-Liang Qi , Zheng-Yu Weng

Traditionally one and two-point correlation functions are used to characterize many-body systems. In strongly correlated quantum materials, such as the doped 2D Fermi-Hubbard system, these may no longer be sufficient because higher-order…

量子气体 · 物理学 2021-01-20 A. Bohrdt , Y. Wang , J. Koepsell , M. Kánasz-Nagy , E. Demler , F. Grusdt

The two-layer square lattice quantum antiferromagnet with spins 1/2 shows a magnetic order-disorder transition at a critical ratio of the interplane to intraplane couplings. We investigate the dynamics of a single hole in a bilayer…

强关联电子 · 物理学 2009-10-31 Matthias Vojta , Klaus W. Becker

We study transient dynamics of hole carriers injected at a certain time into a Mott insulator with antiferromagnetic long range order. This is termed ``dynamical hole doping" as contrast with chemical hole doping. Theoretical framework for…

强关联电子 · 物理学 2015-06-18 Eiki Iyoda , Sumio Ishihara

We study the two-dimensional $t$--$J$ model at finite temperature directly in the thermodynamic limit using purification represented by an infinite projected entangled-pair state (iPEPS). We reach temperatures down to $T/t=0.1$ and hole…

强关联电子 · 物理学 2026-02-12 Yintai Zhang , Aritra Sinha , Marek M. Rams , Jacek Dziarmaga

Atoms confined in optical tweezer arrays constitute a platform for the implementation of quantum computers and simulators. State-dependent operations are realized by exploiting electrostatic dipolar interactions that emerge, when two atoms…

量子物理 · 物理学 2023-08-28 Matteo Magoni , Radhika Joshi , Igor Lesanovsky

We argue that interesting strongly correlated two-dimensional electron systems can be created by modulation doping near a heterojunction between Mott insulators. Because the dopant atoms are remote from the carrier system, the electronic…

强关联电子 · 物理学 2009-11-11 Wei-Cheng Lee , A. H. MacDonald
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