相关论文: Sensing Few Electrons Floating on Helium with High…

A technically simple and physically clear method is suggested for the direct measurement of brightness temperature of two-dimensional electron gas (2DEG) in the channel of a high electron mobility transistor (HEMT). The usage of the method…

Thick metamorphic buffers are perceived to be indispensable for the heteroepitaxial integration of III-V semiconductors on silicon substrates with large thermal expansion and lattice mismatches. However, III-nitride buffers in conventional…

We present a method to obtain quantitative profiles of surface state charge density and monitor its dynamics under various stress conditions in high electron mobility transistor (HEMT) devices. The method employs an optical spectroscopy of…

We have measured signals induced in 5 Corbino electrodes by spontaneous oscillations of 2D surface electrons on liquid helium at $\sim$0.3\,K, with a perpendicular magnetic field and microwave radiation. Analysis using multi-scale,…

True random numbers are extracted through measurements of vacuum fluctuations in quantum state components. We propose an improved scheme utilizing an optimization-based simulation methodology to enhance the temporal resolution of quantum…

The hole carrier field-effect mobility of hybrid molybdenum disulfide (MoS2) nanoparticles suspended in poly(3-hexylthiophene) (P3HT) thin film transistor (TFT) was found to be enhanced when it compared to P3HT-only TFTs. The improvement in…

We present a comprehensive investigation of self-heating in gallium nitride (GaN) high-electron-mobility transistors (HEMTs) through technology computer-aided design (TCAD) simulations and phonon Monte Carlo (MC) simulations. With…

A novel readout architecture that uses multiple non-destructive floating-gate amplifiers to achieve sub-electron readout noise in a thick, fully-depleted silicon detector is presented. This Multi-Amplifier Sensing Charge-Coupled Device…

Precision spectroscopy of simple atomic systems has refined our understanding of the fundamental laws of quantum physics. In particular, helium spectroscopy has played a crucial role in describing two-electron interactions, determining the…

We investigate the low loss acoustic motion of superfluid $^4$He parametrically coupled to a very low loss, superconducting Nb, TE$_{011}$ microwave resonator, forming a gram-scale, sideband resolved, optomechanical system. We demonstrate…

Hydrodynamic electrons in high-mobility graphene devices have demonstrated great potential in establishing an electronic analogue of relativistic quantum fluid in solid-state systems. One of the key requirements for observing viscous…

We report N-polar AlN-based high-electron mobility transistors (HEMTs) with a GaN channel thickness of 5.2 nm on N-polar AlN on sapphire. The threshold voltage is around -2.4 to -3.0 V with saturation currents over 240 mA/mm and on/off…

High harmonic emissions from crystalline solids contain rich information on the dynamics of electrons driven by intense infrared laser fields and have been intensively studied owing to their potential use as a probe of microscopic…

A method is introduced to isolate and measure the electrical transport properties of individual single-walled carbon nanotubes (SWNTs) aligned on an ST-cut quartz, from room temperature down to 2 K. The diameter and chirality of the…

The effects of very low temperature on the electron transport in a [110] and [100] axially aligned unstrained silicon nanowires (SiNWs) are investigated. A combination of semi-empirical 10-orbital tight-binding method, density functional…

We developed an impedance bridge that operates at cryogenic temperatures (down to 60 mK) and in perpendicular magnetic fields up to at least 12 T. This is achieved by mounting a GaAs HEMT amplifier perpendicular to a printed circuit board…

The InGaAs-InAlAs-InP high electron mobility transistor (InP HEMT) is the preferred active device used in a cryogenic low noise amplifier (LNA) for sensitive detection of microwave signals. We observed that an InP HEMT 0.3-14GHz LNA at 2K,…

We present a systematic study on low-frequency current fluctuations of nano-devices consisting of one single semiconducting nanotube, which exhibit significant 1/f-type noise. By examining devices with different switching mechanisms,…

Bottom-up synthesized GNRs and GNR heterostructures have promising electronic properties for high performance field effect transistors (FETs) and ultra-low power devices such as tunnelling FETs. However, the short length and wide band gap…

The electrical and optical response of a field-effect device comprising a network of semiconductor-enriched single-wall carbon nanotubes, gated with sodium chloride solution is investigated. Field-effect is demonstrated in a device that…