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相关论文: Is p-type doping in TeO2 feasible?

200 篇论文

Kondo insulator FeSb$_2$ with large Seebeck coefficient would have potential in thermoelectric applications in cryogenic temperature range if it had not been for large thermal conductivity $\kappa$. Here we studied the influence of…

强关联电子 · 物理学 2016-05-06 Kefeng Wang , Rongwei Hu , John Warren , C. Petrovic

Two-dimensional transition-metal dichalcogenides (TMDs) have attracted interest as post-Si channel candidates in transistor technology. However, despite their potential benefits, controllably doping TMDs has proven difficult. In this work,…

材料科学 · 物理学 2025-04-22 Nikhil Sivadas , Yongwoo Shin

In2O3 is a prototype wide-band-gap semiconductor that exhibits metallic conductivity when highly doped with Sn while retaining a high degree of transparency to visible light. It is widely used as a transparent window/electrode in solar…

材料科学 · 物理学 2019-03-27 Fernando P. Sabino , Su-Huai Wei , Anderson Janotti

Two-dimensional (2D) elemental semiconductors have great potential for device applications, but their performance is limited by the lack of efficient doping methods. Here, combining molecular beam epitaxy, scanning tunneling…

The recently discovered Fe-based superconductor (FeBS) LaFe2As2 seems to break away from an established pattern that doping FeBS beyond 0.2e/Fe destroys superconductivity. LaFe2As2 has an apparent doping of 0.5e, yet superconducts at 12.1…

超导电性 · 物理学 2020-01-03 I. I. Mazin , Makoto Shimizu , Nayuta Takemori , Harald O. Jeschke

The emergent phenomena such as superconductivity and topological phase transitions can be observed in strict two-dimensional crystalline matters. Artificial interfaces and one atomic thickness layers are typical 2D materials of this kind.…

超导电性 · 物理学 2019-06-12 J. G. Guo , X. Chen , X. Y. Jia , Q. H. Zhang , N. Liu , H. C. Lei , S. Y. Li , L. Gu , S. F. Jin , X. L. Chen

High-$T_{\rm C}$ superconductors show anomalous transport properties in their normal states, such as the bad-metal and pseudogap behaviors. To discuss their origins, it is important to speculate whether these behaviors are…

We report high performance p-type field-effect transistors based on single layered (thickness, ~0.7 nm) WSe2 as the active channel with chemically doped source/drain contacts and high-{\kappa} gate dielectrics. The top-gated monolayer…

介观与纳米尺度物理 · 物理学 2012-06-22 Hui Fang , Steven Chuang , Ting Chia Chang , Kuniharu Takei , Toshitake Takahashi , Ali Javey

Two-dimensional materials (2D) arranged in hybrid van der Waals (vdW) heterostructures provide a route toward the assembly of 2D and conventional III-V semiconductors. Here, we report the structural and electronic properties of single layer…

Superconductors derived from topological insulators and topological crystalline insulators by doping have long been considered to be candidates as topological superconductors. Pb$_{0.5}$Sn$_{0.5}$Te is a topological crystalline insulator…

超导电性 · 物理学 2015-08-05 Guan Du , Zengyi Du , Delong Fang , Huan Yang , R. D. Zhong , J. Schneeloch , G. D. Gu , Hai-Hu Wen

We investigated the magnetotransport properties of Fe-doped topological insulator Sb1.96 Fe0.04Te3 single crystals. With doping, the band structure changes significantly and multiple Fermi pockets become evident in the Shubnikov-de Haas…

材料科学 · 物理学 2019-05-01 Weiyao Zhao , David Cortie , Lei Chen , Zhi Li , Zengji Yue , Xiaolin Wang

For the first time, polyethyleneimine (PEI) doping on multilayer MoS2 field-effect transistors are investigated. A 2.6 times reduction in sheet resistance, and 1.2 times reduction in contact resistance have been achieved. The enhanced…

材料科学 · 物理学 2014-11-05 Yuchen Du , Han Liu , Adam T. Neal , Mengwei Si , Peide D. Ye

The observation of helical surface states in Bi-based three-dimensional topological insulators has been a challenge since their theoretical prediction. The main issue raises when the Fermi level shifts deep into the bulk conduction band due…

介观与纳米尺度物理 · 物理学 2021-02-18 Shaham Jafarpisheh , An Ju , Kevin Janßen , Takashi Taniguchi , Kenji Watanabe , Christoph Stampfer , Bernd Beschoten

WTe$_2$ is a material with rich topological properties: it is a 2D topological insulator as a monolayer and a Weyl-semimetal and higher-order topological insulator (HOTI) in the bulk form. Inducing superconductivity in topological materials…

Ordinary doping by electrons (holes) generally means that the Fermi level shifts towards the conduction band (valence band) and that the conductivity of free carriers increases. Recently, however, some peculiar doping characteristics were…

材料科学 · 物理学 2019-03-27 Qihang Liu , Gustavo M. Dalpian , Alex Zunger

The evolution of the electronic structures of strongly correlated insulators with doping has long been a central fundamental question in condensed matter physics; it is also of great practical relevance for applications. We have studied the…

Due to high density of native defects, the prototypical topological insulator (TI), Bi$_2$Se$_3$, is naturally n-type. Although Bi$_2$Se$_3$ can be converted into p-type by substituting 2+ ions for Bi, only light elements such as Ca have…

材料科学 · 物理学 2020-02-12 Jisoo Moon , Zengle Huang , Weida Wu , Seongshik Oh

Possible superconductivity in recently discovered (Tl,K)Fe$_x$Se$_2$ compounds is studied from the viewpoint of doped Mott insulator. The Mott insulating phase is examined to be preferred in the parent compound at $x=1.5$ due to the…

超导电性 · 物理学 2015-03-17 Yi Zhou , Dong-Hui Xu , Fu-Chun Zhang , Wei-Qiang Chen

Doping mobile carriers into ordinary semiconductors such as Si, GaAs, and ZnO was the enabling step in the electronic and optoelectronic revolutions. The recent emergence of a class of "Quantum Materials", where uniquely quantum…

材料科学 · 物理学 2020-11-30 Alex Zunger , Oleksandr I. Malyi

We synthesized the samples $Ba_{1-x}M_xFe_2As_2$ (M=La and K) with $ThCr_2Si_2$-type structure. These samples were systematically characterized by resistivity, thermoelectic power (TEP) and Hall coefficient ($R_H$). $BaFe_2As_2$ shows an…

超导电性 · 物理学 2009-11-13 G. Wu , R. H. Liu , H. Chen , Y. J. Yan , T. Wu , Y. L. Xie , J. J. Ying , X. F. Wang , D. F. Fang , X. H. Chen