相关论文: Characterisation of SiC radiation detector technol…

Recent progress in active-edge technology of silicon sensors enables the development of large-area tiled silicon pixel detectors with small dead space between modules by utilizing edgeless sensors. Such technology has been proven in…

The high-luminosity operation of the Tracker in the Compact Muon Solenid (CMS) detector at the Large Hadron Collider (LHC) experiment calls for the development of silicon-based sensors. This involves implementation of AC-coupling to…

Integrated sensing and communication (ISAC) is a pivotal component of sixth-generation (6G) wireless networks, leveraging high-frequency bands and massive multiple-input multiple-output (M-MIMO) to deliver both high-capacity communication…

Cathode electrodes of the Si(Li) detector elements of the SIXA X-ray spectrometer array are formed by gold-palladium alloy contact layers. The equivalent thickness of gold in one element was measured by observing the characteristic L-shell…

Future strategic X-ray satellite telescopes, such as the probe-class Advanced X-ray Imaging Satellite (AXIS), will require excellent soft energy response in their imaging detectors to enable maximum discovery potential. In order to…

Pixelated silicon detectors are state-of-the-art technology to achieve precise tracking and vertexing at collider experiments, designed to accurately measure the hit position of incoming particles in high rate and radiation environments.…

The recent progress in chip-scale integrated photonics has stimulated the rapid development of material platforms with desired optical properties. Among the different material platforms that are currently investigated, the third-generation…

The progress of miniaturisation in integrated electronics has led to atomic and nanometre-sized dopant devices in silicon. Such structures can be fabricated routinely by hydrogen resist lithography, using various dopants such as phosphorous…

Development of the Silicon photomultiplier Elementary Cell Add-on camera (SiECA) has provided extensive information regarding the use of SiPMs for future cosmic ray detection systems. We present the technical aspects of sensor readout…

Silicon PhotoMultipliers (SiPM) are an excellent choice for the scintillator light readout at hadron calorimeters due to their insensitivity to magnetic fields, low operating voltages, low cost, compactness and mechanical endurance. They…

Silicon carbide (SiC) has great potential for optomechanical applications due to its outstanding optical and mechanical properties. However, challenges associated with SiC nanofabrication have constrained its adoption in optomechanical…

We present waveguide integrated high-speed Si photodetector integrated with silicon nitride (SiN) waveguide on SOI platform for short reach data communication in 850 nm wavelength band. We demonstrate a waveguide couple Si pin photodetector…

Emitters in high refractive index materials like 4H-SiC suffer from reduced detection of photons because of losses caused by total internal reflection. Thus, integration into efficient nanophotonic structures which couple the emission of…

We report a high Responsivity broad band photo-detector working in the wavelength range 400 nm to 1100 nm in a horizontal array of Si microlines (line width ~1 micron) fabricated on a Silicon-on-Insulator (SOI) wafer. The array was made…

Silicon photomultipliers (SiPMs) are a good alternative to photomultiplier tubes (PMTs) because their gain and quantum efficiency are comparable to PMTs. However, the largest single-chip SiPM is still less than 1~cm$^2$. In order to use…

A silicon microstrip detector (SSD) has been developed to have state of the art spatial resolution and a large sensitive area under stringent power constraints. The design incorporates three floating strips with their bias resistors…

The planned upgrade of the LHC accelerator at CERN, namely the high luminosity (HL) phase of the LHC (HL-LHC foreseen for 2023), will result in a more intense radiation environment than the present tracking system was designed for. The…

The proposed high-luminosity high-energy Electron-Ion Collider (EIC) will provide a clean environment to precisely study several fundamental questions in the fields of high-energy and nuclear physics . A low material budget and high…

A monolithic silicon pixel detector prototype has been produced in the SiGe BiCMOS SG13G2 130 nm node technology by IHP. The ASIC contains a matrix of hexagonal pixels with pitch of approximately 100 $\mu$m. Three analog pixels were…

The fabrication of micro- and nano-scale silicon electronic devices requires precision lithography and controlled processing to ensure that the electronic properties of the device are optimized. Importantly, the Si-SiO2 interface plays a…