相关论文: Reconfigurable SWCNT ferroelectric field-effect tr…

Carbon nanotube field-effect transistors (FETs) with passivated coaxial gate structures have been fabricated after growth of contacted suspended single wall nanotubes (SWNTs) and subsequent coating with gate dielectrics. Electron…

Junctionless transistors made of silicon have previously been demonstrated experimentally and by simulations. Junctionless devices do not require fabricating an abrupt source-drain junction and thus can be easier to implement in aggressive…

In-memory computing (IMC) utilizing synaptic crossbar arrays is promising for energy-efficient deep neural network (DNN) accelerators. Various technologies (CMOS and post-CMOS) have been explored as synaptic device candidates, each with its…

Spin-based memories are attractive for their non-volatility and high durability but provide modest resistance changes, whereas semiconductor logic transistors are capable of large resistance changes, but lack memory function with high…

Quantum mechanical effects induced by the miniaturization of complementary metal-oxide-semiconductor (CMOS) technology hamper the performance and scalability prospects of field-effect transistors. However, those quantum effects, such as…

We analyze the quantum information processing capability of a superconducting transmon circuit used to mediate interactions between quantum information stored in a collection of phononic crystal cavity resonators. Having only a single…

Bottom-up synthesized GNRs and GNR heterostructures have promising electronic properties for high performance field effect transistors (FETs) and ultra-low power devices such as tunnelling FETs. However, the short length and wide band gap…

We demonstrate ferroelectric (FE) memory transistors on a crystalline silicon channel with endurance exceeding $10^{10}$ cycles. The ferroelectric transistors (FeFETs) incorporate a high-$\kappa$ interfacial layer (IL) of thermally grown…

We report an experimental noise study of intermediate sized quasi ballistic semiconducting multiwalled carbon nanotube (IS-MWCNT) devices. The noise is two orders of magnitude lower than in singlewalled nanotubes (SWCNTs) and has no length…

Nano-electronic integrated circuit technology is exclusively based on MOSFET transistor due to its scalability down to the nanometer range. On the other hand, Bipolar Junction Transistor (BJT), which provides unmatched analog…

The ability to reversibly and site-selectively tune ambipolar doping in a single semiconductor is crucial for reconfigurable electronics beyond silicon, but remains highly challenging. Here, we present a rewritable architecture based on…

Gate-all-around Vertical Nanowire Field Effect Transistors (VNWFET) are emerging devices, which are well suited to pursue scaling beyond lateral scaling limitations around 7nm. This work explores the relative merits and drawbacks of the…

We determined the frequency dependent effective permittivity of a large ternary network of randomly positioned resistors, capacitors, and diodes. A linear circuit analysis of such systems is shown to match the experimental dielectric…

Gate tunable p-type multilayer tin mono-sulfide (SnS) field-effect transistor (FET) devices with SnS thickness between 50 and 100 nm were fabricated and studied to understand their performances. The devices showed anisotropic inplane…

Electrostatic catalysis has been an exciting development in chemical synthesis (beyond enzymes catalysis) in recent years, boosting reaction rates and selectively producing certain reaction products. Most of the studies to date have been…

Non-volatile memory (NVM) devices that reliably operate at temperatures above 300 $^\circ$C are currently non-existent and remains a critically unmet challenge in the development of high-temperature (T) resilient electronics, necessary for…

Reconfigurable photonic devices are rapidly emerging as a cornerstone of next generation optical technologies, with wide ranging applications in quantum simulation, neuromorphic computing, and large-scale photonic processors. A central…

In this paper, we tackle the high computational overhead of Transformers for efficient image super-resolution~(SR). Motivated by the observations of self-attention's inter-layer repetition, we introduce a convolutionized self-attention…

Difficulties in obtaining high-performance p-type transistors and gate insulator charge-trapping effects present two major challenges for III-V complementary metal-oxide semiconductor (CMOS) electronics. We report a p-GaAs nanowire…

With the staggering increase of edge compute applications like Internet-of-Things (IoT) and artificial intelligence (AI), the demand for fast, energy-efficient on-chip memory is growing. While the fast and mature static random-access memory…