相关论文: Engineering Si-Qubit MOSFETs: A Phase-Field Modeli…

We investigate the tunability of electrostatic coupling between solid state quantum dots as building blocks for quantum bits. Specifically, our analysis is based upon two-dimensional electron systems (2DEG) and depletion by top gates. We…

Solid-state quantum computers require classical electronics to control and readout individual qubits and to enable fast classical data processing [1-3]. Integrating both subsystems at deep cryogenic temperatures [4], where solid-state…

Semiconductor quantum dots operated dynamically are the basis of many quantum technologies such as quantum sensors and computers. Hence, modelling their electrical properties at microwave frequencies becomes essential to simulate their…

Spin properties of two interacting electrons in a quantum dot (QD) embedded in a nanowire with controlled aspect ratio and longitudinal magnetic fields are investigated by using a configuration interaction (CI) method and exact…

This paper presents a physics-based model for the threshold voltage in bulk MOSFETs valid from room down to cryogenic temperature (4.2 K). The proposed model is derived from Poisson's equation including bandgap widening, intrinsic…

Squeezed thermal reservoirs, characterized by thermal noise with anisotropic fluctuations, have profound implications in quantum thermodynamics and serve as powerful resources for quantum information. However, their experimental…

The ability to induce, observe and control quantum coherent interactions in room temperature, electrically driven optoelectronic devices is of outmost significance for advancing quantum science and engineering towards practical…

Reducing errors in quantum gates is critical to the development of quantum computers. To do so, any distortions in the control signals should be identified, however, conventional tools are not always applicable when part of the system is…

We propose and demonstrate a relaxed-SiGe/strained-Si (SiGe/s-Si) enhancement-mode gate stack for quantum dots. The enhancement-mode SiGe/s-Si structure is pursued because it spaces the quantum dot away from charge and spin defect rich…

Temperature rise of qubits due to heating is a critical issue in large-scale quantum computers based on quantum-dot (QD) arrays. This leads to shorter coherence times, induced readout errors, and increased charge noise. Here, we propose a…

The thermoelectric properties of a semiconduct quantum dot chain (SQDC) connected to metallic electrodes are theoretically investigated in the Coulomb blockade regime. An extended Hubbard model is employed to simulate the SQDC system…

Traps at the semiconductor-oxide interface are considered as a major source of instability in strained Ge/SiGe quantum devices, yet the quantified study of their cryogenic behavior remains limited. In this work, we investigate…

Optical illumination of quantum-dot qubit devices at cryogenic temperatures, while not well studied, is often used to recover operating conditions after undesired shocking events or charge injection. Here, we demonstrate systematic…

We study the interplay between Coulomb blockade and the Kondo effect in quantum dots. We use a self-consistent scheme which describes mesoscopic devices in terms of a collective phase variable (slave rotor) and quasiparticle degrees of…

We report a robust process for fabrication of surface-gated Si/SiGe quantum dots (QDs) with an integrated superconducting single-electron transistor (S-SET) charge sensor. A combination of a deep mesa etch and AlOx backfill is used to…

We present a scheme designed to suppress the dominant source of infidelity in entangling gates between quantum systems coupled through intermediate bosonic oscillator modes. Such systems are particularly susceptible to residual…

We investigate the deconfining phase transition in QCD_4 and QED_4 at finite temperature using a perturbative deformation of topological quantum field theory (TQFT). A modified maximal abelian gauge (MAG) is utilized in the analysis. In…

We investigated the quantum gates of coupled quantum dots, theoretically, when charging effects can be observed. We have shown that the charged states in the qubits can be observed by the channel current of the MOSFET structure.

We consider a multiple tunneling process into a quantum dot capacitively coupled to a dissipative environment. The problem is mapped onto an anisotropic Kondo model in its Coulomb gas representation. The tunneling barrier resistance and the…

We study the combined effect of finite temperature, underlying classical dynamics, and deformations on the statistical properties of Coulomb blockade conductance peaks in quantum dots. These effects are considered in the context of the…