相关论文: Engineering Si-Qubit MOSFETs: A Phase-Field Modeli…
We propose atom interferometers based on quantum droplet (QD), which is also being reported as a superior platform for interferometry. The emphasis has been given to harmonic-oscillator (HO) or ring-shaped potentials. In the HO trap, a…
Surface-gated quantum dots (QDs) in semiconductor heterostructures represent a highly attractive platform for quantum computation and simulation. However, in this implementation, the barriers through which the QD is tunnel-coupled to source…
We investigate a system of three tunnel-coupled semiconductor quantum dots in a triangular geometry, one of which is connected to a metallic lead, in the regime where each dot is essentially singly occupied. Both ferro- and…
Cryogenic semiconductor device models are essential in designing control systems for quantum devices and in benchmarking the benefits of cryogenic cooling for high-performance computing. In particular, the saturation of subthreshold swing…
Recent proposals using heterostructures of superconducting and either topologically insulating or semiconducting layers have been put forth as possible platforms for topological quantum computation. These systems are predicted to contain…
Periodically driven quantum systems can realize novel phases of matter that are not present in time-independent Hamiltonians. One important application is the engineering of synthetic gauge fields, which opens the realm of topological…
We study the dynamics of phonon-mediated qubit-qubit interactions between trapped ions in the presence of an ultracold atomic gas. By deriving and solving a master equation to describe the combined system, we show that the presence of the…
Quantum simulation of quasicrystals in synthetic bosonic matter now paves the way to the exploration of these intriguing systems in wide parameter ranges. Yet thermal fluctuations in such systems compete with quantum coherence, and…
This study unveils a groundbreaking exploration of using semiconductor technology in quantum circuitry. Leveraging the unique operability of 45 nm CMOS technology at deep cryogenic temperatures (~ 300 mK), a novel quantum electronic circuit…
Continuously parameterized two-qubit gates are a key feature of state-of-the-art trapped-ion quantum processors as they have favorable error scalings and show distinct improvements in circuit performance over more restricted maximally…
Studying the electrical and structural properties of the interface of the gate oxide (SiO2) with silicon carbide (4H-SiC) is a fundamental topic, with important implications for understanding and optimizing the performances of…
In pursuit of superconducting quantum computing, fluxonium qubits have recently garnered attention for their large anharmonicity and high coherence at the sweet spot. Towards the large-scale integration of fluxonium qubits, a major obstacle…
We study the thermoelectric properties and heat-to-work conversion performance of an interacting, multi-level quantum dot (QD) weakly coupled to electronic reservoirs. We focus on the sequential tunneling regime. The dynamics of the charge…
Matter described by Quantum Chromodynamics (QCD), the theory of strong interactions, may undergo phase transitions when its temperature and the chemical potentials are varied. QCD at finite temperature is studied in the laboratory by…
In this article, we present a technology development of a superconducting qubit device 3D-integrated by flip-chip-bonding and processed following CMOS fabrication standards and contamination rules on 200 mm wafers. We present the utilized…
We employ density functional theory to calculate the self consistent electronic structure, free energy and linear source-drain conductance of a lateral semiconductor quantum dot patterned via surface gates on the 2DEG formed at the…
We develop a hybrid oscillator-qubit processor framework for quantum simulation of strongly correlated fermions and bosons that avoids the boson-to-qubit mapping overhead encountered in qubit hardware. This framework gives exact…
Conditional multi-qubit gates are a key component for elaborate quantum algorithms. In a recent work, Rasmussen et al. (Phys. Rev. A 101, 022308) proposed an efficient single-step method for a prototypical multi-qubit gate, a Toffoli gate,…
We investigate the low temperature transport in 8 nm diameter Si junctionless nanowire field effect transistors fabricated by top down techniques with a wrap-around gate and two different activated doping densities. First we extract the…
Semiconductor qubit devices suffer from the drift of important device parameters as they are operated. The most important example is a shift in qubit operating frequencies. This effect appears to be directly related to the heating of the…