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MnTe has recently emerged as a canonical altermagnet, a newly identified class of magnetism characterized by compensated antiferromagnetic order coexisting with spin-split electronic bands, traditionally considered exclusive to…

The state-of-the-art defect engineering techniques have paved the way to realize novel quantum phases out of pristine materials. Here, through density-functional calculations and model studies, we show that the chain-doped monolayer…

强关联电子 · 物理学 2023-04-10 Mayank Gupta , Amit Chauhan , S. Satpathy , B. R. K. Nanda

Electrons in monolayer transition metal dichalcogenides (TMDs) possess both the valley and spin degree of freedom. These internal quantum degrees of freedom have provided an ideal laboratory for exploring both new physical phenomena and…

介观与纳米尺度物理 · 物理学 2017-02-21 Zefang Wang , Jie Shan , kin Fai Mak

The combination of metallicity and ferroelectricity breaks traditional boundaries, paving new avenues for innovative electronic materials and devices. This breakthrough is particularly notable, as metallicity and ferroelectricity have…

材料科学 · 物理学 2024-04-09 Jiagang Zhang , Ting Zhang

Manipulation of the valley degree of freedom provides a novel paradigm in quantum information technology. Here, through first-principles calculations and model analysis, we demonstrate that monolayer Cr$_2$COOH MXene is a promising…

材料科学 · 物理学 2023-11-03 Ping Li , Chao Wu , Cheng Peng , Mutian Yang , Wei Xun

Ferrovalley materials can achieve manipulation of the valley degree of freedom with intrinsic spontaneous valley polarization introduced by their intrinsic ferromagnetism. A good ferrovalley material should possess perpendicular magnetic…

材料科学 · 物理学 2022-01-05 San-Dong Guo , Jing-Xin Zhu , Wen-Qi Mu , Bang-Gui Liu

The combination of altermagnetism, twistronics and valleytronics is of great significance for potential applications in advanced electronic devices. Twisted magnetic van der Waals bilayers have been identified as an ideal platform for…

材料科学 · 物理学 2024-06-21 San-Dong Guo , Yichen Liu , Cheng-Cheng Liu

Although single-layer transition-metal dichalcogenides with novel valley functionalities are promising candidate to realize valleytronic devices, the essential understanding of valley depolarization mechanisms is still incomplete. Based on…

介观与纳米尺度物理 · 物理学 2020-12-18 Tae-Young Jeong , Soungmin Bae , Seong-Yeon Lee , Suyong Jung , Yong-Hoon Kim , Ki-Ju Yee

Zinc-blende CdSe semiconducting nanoplatelets (NPL) show outstanding quantum confinement properties thanks to their small, atomically-controlled, thickness. For example, they display extremely sharp absorption peaks that make them very…

应用物理 · 物理学 2019-12-09 Ivan Dozov , Claire Goldmann , Patrick Davidson , Benjamin Abécassis

The interlayer coupling is emerging as a new parameter for tuning the physical properties of two-dimensional (2D) van der Waals materials. When two identical semiconductor monolayers are stacked with a twist angle, the periodic interlayer…

介观与纳米尺度物理 · 物理学 2022-09-16 Jing Liang , Dongyang Yang , Jingda Wu , Jerry I Dadap , Kenji Watanabe , Takashi Taniguchi , Ziliang Ye

2D materials with valley-related multiple Hall effect are both fundamentally intriguing and practically appealing to explore novel phenomena and applications, but have been largely overlooked up to date. Here, using first-principles…

介观与纳米尺度物理 · 物理学 2021-08-18 Xiangyu Feng , Xilong Xu , Zhonglin He , Rui Peng , Ying Dai , Baibiao Huang , Yandong Ma

It is known that carrier mobility in layered semiconductors generally increases from two-dimension (2D) to three-dimension due to suppressed scattering channels resulting from decreased densities of electron and phonon states. In this work,…

材料科学 · 物理学 2022-04-26 Shiru Song , Ji-Hui Yang , Xin-Gao Gong

We show that inversion symmetry breaking together with spin-orbit coupling leads to coupled spin and valley physics in monolayers of MoS2 and other group-VI dichalcogenides, making possible controls of spin and valley in these 2D materials.…

介观与纳米尺度物理 · 物理学 2012-05-09 Di Xiao , Gui-Bin Liu , Wanxiang Feng , Xiaodong Xu , Wang Yao

Single-layer transition metal dichalcogenide (TMD) WSe2 has recently attracted a lot of attention because it is a 2D semiconductor with a direct band-gap. Due to low doping levels it is intrinsic and shows ambipolar transport. This opens up…

介观与纳米尺度物理 · 物理学 2014-07-18 Adrien Allain , Andras Kis

For layered materials, the interlayer stacking is a critical degree of freedom tuning electronic properties, while its microscopic characterization faces great challenges. The transition-metal dichalcogenide 1T-TaS$_2$ represents a novel…

材料科学 · 物理学 2025-08-01 Li Cheng , Linpeng Nie , Xuanyu Long , Li Liang , Dan Zhao , Jian Li , Zheng Liu , Tao Wu , Xianhui Chen , Xiaolong Zou

A charge density wave (CDW) of a nonzero ordering vector $\mathbf{q}$ couple electronic states at $\mathbf{k}$ and $\mathbf{k}+\mathbf{q}$ statically, giving rise to a reduced Brillouin zone (RBZ) due to the band folding effect. Its…

材料科学 · 物理学 2021-09-20 Ming-Chien Hsu , Bahadur Singh , Chuang-Han Hsu , Su-Yang Xu , Hsin Lin , Shin-Ming Huang

While conventional semiconductor technology relies on the manipulation of electrical charge for the implementation of computational logic, additional degrees of freedom such as spin and valley offer alternative avenues for the encoding of…

In solid, the crystalline structure can endow electron an internal degree of freedom known as valley, which characterizes the degenerate energy minima in momentum space. The recent success in optical pumping of valley polarization in 2D…

介观与纳米尺度物理 · 物理学 2017-03-07 Xing-Tao An , Jiang Xiao , M. W. -Y. Tu , Hongyi Yu , Vladimir I. Fal'ko , Wang Yao

Analogous to charge and spin, electrons in solids endows an additional degree of freedom: the valley pseudospin. Two-dimensional hexagonal materials such as graphene exhibit two valleys, labelled as $\mathbf{K}$ and $\mathbf{K}^{\prime}$.…

介观与纳米尺度物理 · 物理学 2022-01-12 M. S. Mrudul , Gopal Dixit

Here we analyze multiple symmetry-inequivalent atomic configurations across the entire composition range of the isovalent and isostructural Mo$_x$W$_{1-x}$S$_2$ alloy using density-functional theory and Monte Carlo simulations. Our results…

材料科学 · 物理学 2026-04-17 M. Szyszko , M. Birowska