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Cluster research so far only dealt with either 3D free clusters or clusters on substrates with strong electronic coupling at the interface. Preparation of free and orientated 2D clusters is usually not possible because one of these…

材料科学 · 物理学 2007-05-23 M. Traving , C. Kreis , R. Adelung , L. Kipp , M. Skibowski

Van der Waals heterostructures of two-dimensional transition metal dichalcogenides provide a unique platform to engineer optoelectronic devices tuning their optical properties via stacking, twisting, or straining. Using ab initio Many-Body…

介观与纳米尺度物理 · 物理学 2025-03-21 R. Reho , A. R. Botello-Méndez , D. Sangalli , M. J. Verstraete , Zeila Zanolli

The production of new sensors, transducers and electronic components can benefit from the possibility to alter the electronic transport of metal-semicondutor-metal (MSM) devices. 2D materials are extremely appealing for those new…

材料科学 · 物理学 2018-07-04 Igor Neri , Miquel López-Suárez

The AV3Sb5 (A = K, Rb, Cs) kagome materials host an interplay of emergent phenomena including superconductivity, charge density wave states, and non-trivial electronic structure topology. The band structures of these materials exhibit a…

材料科学 · 物理学 2024-07-15 Aurland K. Watkins , Dirk Johrendt , Vojtech Vlcek , Stephen D. Wilson , Ram Seshadri

Here we report the formation of type-A and type-B electronic junctions without any structural discontinuity along a well-defined 1-nm-wide one-dimensional electronic channel within a van der Waals layer. We employ scanning tunneling…

强关联电子 · 物理学 2023-09-06 Qirong Yao , Jae Whan Park , Choongjae Won , Sang-Wook Cheong , Han Woong Yeom

Twisted van der Waals heterostructures have recently been proposed as a condensed-matter platform for realizing controllable quantum models due to the low-energy moir\'e bands with specific charge distributions in moir\'e superlattices.…

Stacked van der Waals (vdW) heterostructures where semi-conducting two-dimensional (2D) materials are contacted by overlayed graphene electrodes enable atomically-thin, flexible electronics. We use first-principles quantum transport…

材料科学 · 物理学 2017-05-24 Daniele Stradi , Nick R. Papior , Mads Brandbyge

We propose the nano-scale displacement sensor with high resolution for weak-force systems could be realized based on vertical stacked two-dimensional (2D) atomic corrugated layer materials bound through Van der Waals (VdW) interaction.…

材料科学 · 物理学 2015-06-11 Lin Hu , Jin Zhao , Jinlong Yang

We present a comprehensive study of the electronic structures of 192 configurations of 39 stable, layered, transition-metal dichalcogenides using density-functional theory. We show detailed investigations of their monolayer, bilayer, and…

应用物理 · 物理学 2017-11-10 M. Javaid , Salvy P. Russo , K. Kalantar-Zadeh , Andrew D. Greentree , Daniel W. Drumm

The ability to manipulate two-dimensional (2D) electrons with external electric fields provides a route to synthetic band engineering. By imposing artificially designed and spatially periodic superlattice (SL) potentials, 2D electronic…

Two-dimensional heterostructure of WSe2/MoS2 atomic layers has unique piezoelectric characteristics which depends on the number of atomic layer, stacking type, and interlayer interaction size. The van der Waals heterostructure of p- and…

介观与纳米尺度物理 · 物理学 2019-12-13 Sheng Yu , Tikaram Neupane , Dulitha Jayakodige , Zhuo Yang

Molybdenum disulfide (MoS$_2$), a layered van der Waals material, has attracted considerable attention as a promising alternative to graphene for applications in field-effect transistors and nanophotonic devices because of its sizable band…

材料科学 · 物理学 2026-04-16 Shunsuke Hirai , Ibuki Terada , Michi-To Suzuki

Layered transition metal dichalcogenides (TMDs) are commonly classified as quasi-two-dimensional materials, meaning that their electronic structure closely resembles that of an individual layer, which results in resistivity anisotropies…

Mott physics is at the root of a plethora of many-body quantum phenomena in quantum materials. Recently, the stacked or twisted structures of van der Waals (vdW) materials have emerged as a unique platform for realizing exotic correlated…

The electronic structure of two-dimensional (2D) semiconductors can be significantly altered by screening effects, either from free charge carriers in the material itself, or by environmental screening from the surrounding medium. The…

Transitions between different charge density wave (CDW) states in quasi-two-dimensional materials may be accompanied also by changes in the inter-layer stacking of the CDW. Using MeV ultrafast electron diffraction, the out-of-plane stacking…

材料科学 · 物理学 2017-11-09 L. Le Guyader , T. Chase , A. Reid , R. K. Li , D. Svetin , X. Shen , T. Vecchione , X. J. Wang , D. Mihailovic , H. A. Dürr

Interest in layered two dimensional materials, particularly stacked heterostructures of transition metal dichalcogenides, has led to the need for a better understanding of the structural and electronic changes induced by stacking. Here, we…

Two-dimensional (2D) MoSi$_2$N$_4$ monolayer is an emerging class of air-stable 2D semiconductor possessing exceptional electrical and mechanical properties. Despite intensive recent research efforts devoted to uncover the material…

材料科学 · 物理学 2021-02-03 Liemao Cao , Guanghui Zhou , Qianqian Wang , L. K. Ang , Yee Sin Ang

Van der Waals heterostructures, which explore the synergetic properties of two-dimensional (2D) materials when assembled into three-dimensional stacks, have already brought to life a number of exciting new phenomena and novel electronic…

The relative orientation (twist) of successive layers of stacked two-dimensional (2D) materials creates variations in the interlayer atomic registry. The variations often form a super lattice, called a moir\'e pattern, which can alter…

介观与纳米尺度物理 · 物理学 2020-08-05 Stephen Carr , Daniel Massatt , Mitchell Luskin , Efthimios Kaxiras