相关论文: Valley-dependent transport through graphene quantu…

We investigate the electronic dispersion and transport properties of graphene/WSe$_{2}$ heterostructures in the presence of a proximity induced spin-orbit coupling (SOC) using a low-energy Hamiltonian, with different types of symmetry…

Inducing and controlling spin-orbit coupling (SOC) in graphene is key to create topological states of matter, and for the realization of spintronic devices. Placing graphene onto a transition metal dichalcogenide is currently the most…

Recently, proximity-induced spin-orbit coupling (SOC) has been observed in heterostructures consisting of monolayer graphene (ML-G) and transition metal dichalcogenides (TMDCs) such as WSe$_{2}$. Successful tuning of SOC in…

The discovery of Mott insulators and superconductivity in twisted bilayer graphene has ignited intensive research into strong correlation effects in other stacking geometries. Bernal-stacked bilayer graphene (BBG), when subjected to a…

Despite its extremely weak intrinsic spin-orbit coupling (SOC), graphene has been shown to acquire considerable SOC by proximity coupling with exfoliated transition metal dichalcogenides (TMDs). Here we demonstrate strong induced Rashba SOC…

We demonstrate clear weak anti-localization (WAL) effect arising from induced Rashba spin-orbit coupling (SOC) in WS$_2$-covered single-layer and bilayer graphene devices. Contrary to the uncovered region of a shared single-layer graphene…

We study the correlated ground states of twisted mono-bilayer graphene with and without proximity-induced spin-orbit coupling (SOC) from a transition-metal dichalcogenide layer placed on top. We perform self-consistent Hartree-Fock…

We investigate the electronic dispersion and transport properties of graphene/WSe$_{2}$ heterostructures in the presence of a proximity-induced spin-orbit coupling $\lambda_{v}$, sublattice potential $\Delta$, and an off-resonant circularly…

Spin-orbit coupling (SOC) and electron-electron interaction can mutually influence each other and give rise to a plethora of intriguing phenomena in condensed matter systems. In pristine bilayer graphene, which has weak SOC, intrinsic…

The negligible intrinsic spin-orbit coupling (SOC) in graphene can be enhanced by proximity effects in stacked heterostructures of graphene and transition metal dichalcogenides (TMDCs). The composition of the TMDC layer plays a key role in…

The proximity-induced spin-orbit coupling (SOC) in heterostructures of twisted graphene and topological insulators (TIs) Bi$_2$Se$_3$ and Bi$_2$Te$_3$ is investigated from first principles. To build commensurate supercells, we strain…

At the center of quantum computing1 realization is the physical implementation of qubits - two-state quantum information units. The rise of graphene2 has opened a new door to the implementation. Because graphene electrons simulate…

The development of a spintronics device relies on efficient generation of spin polarized currents and their electric field controlled manipulation. While observation of exceptionally long spin relaxation lengths make graphene an intriguing…

Spin-orbit coupling (SOC) has played an important role in many topological and correlated electron materials. In graphene-based systems, SOC induced by transition metal dichalcogenide (TMD) at proximity was shown to drive topological states…

Inducing sizable spin--orbit interactions in graphene by proximity effect is establishing as a successful route to harnessing two-dimensional Dirac fermions for spintronics. Semiconducting transition metal dichalcogenides (TMDs) are an…

Proximity coupling of bilayer graphene (BLG) to transition metal dichalcogenides (TMDs) offers a promising route to engineer gate-tunable spin-orbit coupling (SOC) while preserving BLG's exceptional electronic properties. This tunability…

We present a DFT-based investigation of the twist-angle dependent proximity spin-orbit coupling (SOC) in graphene/TMDC structures. We find that for Mo-based TMDCs the proximity valley-Zeeman SOC exhibits a maximum at around 15--20{\deg},…

Graphene is a material with great potential in the field of spintronics, combining good conductivity with low spin--orbit coupling (SOC), which allows for the transport of spin currents over long distances. However, this lack of SOC also…

Graphene is known to have small intrinsic spin-orbit Interaction (SOI). In this review, we demonstrate that SOIs in graphene can be strongly enhanced by proximity effect when graphene is deposited on the top of transition metal…

An analogue of the Datta-Das spin FET is investigated, which is all-graphene and based on the valley degree of freedom of electrons / holes. The "valley FET" envisioned consists of a quantum wire of gapped graphene (channel) sandwiched…