相关论文: Growth of [001]-oriented polycrystalline Heusler a…

Large-area deposition of Aluminium-Scandium-Nitride (Al1-xScxN) thin films with higher Sc content (x) remains challenging due to issues such as abnormal orientation growth, stress control, and the undesired crystal phase. These anomalies…

In this work we reported the structural and electronic properties of the Heusler compound Co2FeGe using the AKAI-KKR code under the GGA approximation. We established that this material presents not only magnetic character but also has a…

The half-metallic half-Heusler alloy NiMnSb is a promising candidate for applications in spintronic devices due to its low magnetic damping and its rich anisotropies. Here we use ferromagnetic resonance (FMR) measurements and calculations…

Pulsed laser deposition was employed to grow thin films of the Heusler compounds Co_2MnSi and Co_2FeSi. Epitaxial growth was realized both directly on MgO (100) and on a Cr or Fe buffer layer. Structural analysis by x-ray and electron…

The $\mathrm{Co_2}$ family of ferromagnetic Heusler alloys have attracted interest due to their fully spin-polarized nature, making them ideal for applications in spintronic devices. More recently, the existence of room temperature…

Intermetallic Heusler alloys are amongst the most attractive half-metallic systems due to the high Curie temperatures and the structural similarity to the binary semiconductors. In this review we present an overview of the basic electronic…

In this investigation, we have used the density functional theory (DFT) to investigate several aspects of the half-Heusler compound HoPdBi. The following properties have been studied: spin polarized electronic properties, magnetic moment,…

This work presents a comprehensive investigation of the HH alloy PdCrAs using first - principles methods, highlighting its potential applications in various fields, including spintronics, thermoelectrics, and optoelectronics. We employed…

A review of theoretical and experimental studies of the electronic structure, electronic and magnetic properties of various systems of Heusler alloys in the states of a half-metallic ferromagnet, a spin gapless semiconductor, and a…

Many technologies require highly-oriented and textured functional thin films. The most common synthe-sis approaches use on-axis sputter geometries. However, in some scenarios, on-axis sputtering is not feasible. During ionized physical…

Spin semimetals are a recently discovered new class of spintronic materials, which exhibit a band gap in one spin channel while a semimetallic feature in the other and thus allows for tunable spin transport. Here, we present experimental…

Organic spintronics has drawn the interest of the science community due to various applications in spin-valve devices. But to date, an efficient room-temperature Organic Spin Valve device has not been experimentally realized due to the…

Experimental and computational studies were performed on Co2FeGe Heusler alloy. It was found that the alloy has very high experimental magnetic moment of 6.1 muB/f.u., curie temperature of 1073K and very high spin-wave stiffness constant of…

We report the structural, transport, electronic, and magnetic properties of Co$_2$FeGa Heusler alloy nanoparticles. The Rietveld refinements of x-ray diffraction (XRD) data with the space group Fm$\bar {3}$m clearly demonstrates that the…

In spite of being highly relevant for the development of a new generation of information storage devices, not many single-phase materials displaying magnetic and ferroelectric orders above room temperature are known. Moreover, these…

Highly oriented VO2 thin films were grown on sapphire substrates by the sol-gel method that includes a low pressure annealing in an oxygen atmosphere. This reduction process effectively promotes the formation of the VO2 phase over a…

Ferroelectric HfO$_2$ is a promising material for new memory devices, but significant improvement of important properties is necessary to reach applications. However, precedent literature shows that a dilemma between polarization, endurance…

The ferrimagnetic Heusler compound Mn2VGa is predicted to have a pseudogap in the majority spin channel, which should lead to a negative tunnel magnetoresistance. We synthesized epitaxial Mn2VGa thin films on MgO(001) substrates by dc and…

Ga2O3 thin films were deposited by reactive magnetron sputtering from a liquid gallium target. The influence of deposition temperature, substrate type, and discharge parameters on the structural and electrical properties was systematically…

Synthesizing half-metallic fully-compensated ferrimagnets that form in the inverse Heusler phase could lead to superior spintronic devices. These materials would have high spin polarization at room temperature with very little fringing…