相关论文: Growth of [001]-oriented polycrystalline Heusler a…
Noncollinear metallic antiferromagnets, with their rapid spin dynamics, efficient spin transport, and distinctive spin textures, play a pivotal role in advancing the field of spintronics. In this study, we report a comprehensive…
We have grown Au/Ag modulated nanostructured thin films by pulsed laser deposition using metallic targets. The growths performed at room temperature involved deposition of alternate layers of the two metals with larger thickness of Au and…
This work reports on the bulk properties of the quaternary Heusler alloy Co$_2$Mn$_{1-x}$Fe$_x$Si with the Fe concentration $x=$. All samples, which were prepared by arc melting, exhibit $L2_1$ long range order over the complete range of Fe…
Inverse Heusler alloy Mn2CoAl thin films, known as a spin-gapless semiconductor (SGS), grown by three different methods: ultra-high vacuum magnetron spattering, Ar-ion beam assisted sputtering, and molecular beam epitaxy, are investigated…
CoFe2O4 thin films (5 nm and 20 nm thick) were grown by oxygen assisted molecular beam epitaxy on Pt(111) at 523~K and subsequently annealed at 773 K in vacuum or oxygen. They were characterized in-situ using Auger Electron Spectroscopy,…
For spintronics applications, it is highly desirable to realize highly-spin-polarized two-dimensional (2D) electron systems in electrically-controllable epitaxial ultrathin films on semiconductor substrates. Through systematic…
Two-dimensional (2D) high-temperature ferromagnetic materials are important for spintronic application. Fortunately, a highly-air-stable PdSe$_2$ monolayer semiconductor has been made through exfoliation from the layered bulk material. It…
We present a systematic study of the magnetic properties of semiconducting ZnFe$_2$O$_4$ thin films fabricated by pulsed laser deposition at low and high oxygen partial pressure and annealed in oxygen and argon atmosphere, respectively. The…
Ferromagnetic resonance (FMR) technique has been used to study the magnetization relaxation processes and magnetic anisotropy in two different series of the Co2FeSi (CFS) Heusler alloy thin films, deposited on the Si(111) substrate by UHV…
Heusler compounds are promising materials for spintronics with adjustable electronic properties including 100% spin polarization at the Fermi energy. We investigate the electronic states of AlOx capped epitaxial thin films of the…
Ferromagnetic materials dominate as the magnetically active element in spintronic devices, but come with drawbacks such as large stray fields, and low operational frequencies. Compensated ferrimagnets provide an alternative as they combine…
Perpendicular magnetization is essential for high-density memory application using magnetic materials. High-spin polarization of conduction electrons is also required for realizing large electric signals from spin-dependent transport…
In this work, we report the successful synthesis of a Fe-based novel half-metallic quaternary Heusler alloy FeMnVGa and its structural, magnetic and transport properties probed through different experimental methods and theoretical…
Half-metallic half-Heusler compounds with strong spin-orbit-coupling and broken inversion symmetry in their crystal structure are promising materials for generating and absorbing spin-currents, thus enabling the electric manipulation of…
Controlled crystallization of amorphous alloys offers a powerful route to tailor magnetic and structural properties at the nanoscale. Thin films of CoFeB alloy are essential for the development of various spintronic devices. The…
Half-metallic Heusler alloys are attracting considerable attention because of their unique half-metallic band structures which exhibit high spin polarization and yield huge magnetoresistance ratios. Besides serving as ferromagnetic…
Half-metallic Heusler alloys are amongst the most promising materials for future magnetoelectronic applications. We review some recent results on the electronic properties of these compounds. The origin of the gap in these half-metallic…
MgB2 thin films were deposited using Pulsed Laser Deposition (PLD) and ex-situ annealing in Mg atmosphere. The films presented critical temperatures up to 36K and turned out to be preferentially c-oriented both on Al2O3 (r-cut) and MgO(100)…
We investigated interfaces of halfmetallic Co2MnSi(100) Heusler thin films with Ag(100), Cr(100), Cu and Al layers relevant for spin valves by high energy x-ray photoemission spectroscopy (HAXPES). Experiments on Co2MnSi samples with an…
Ferroelectricity in sputtered undoped-HfO$_2$ is attractive for composition control for low power and non-volatile memory and logic applications. Unlike doped HfO$_2$, evolution of ferroelectricity with annealing and film thickness effect…