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相关论文: Detecting the spread of valence band Wannier funct…

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The optical absorbance of 2D semiconductors is generalized to individual lattice sites through the topological marker formalism, yielding an absorbance marker. This marker allows to investigate the atomic scale variation of absorbance…

强关联电子 · 物理学 2025-08-05 Luis F. Cárdenas-Castillo , Shuai Zhang , Fernando L. Freire , Wei Chen

We elaborate that many non-excitonic dielectric and optical properties of semiconductors and insulators caused by interband absorption are originated from quantum geometry, including charge susceptibility, relative dielectric constant,…

介观与纳米尺度物理 · 物理学 2025-02-21 Wei Chen

Thanks to the nearsightedness principle, the low-energy electronic structure of solids can be represented by localized states such as the Wannier functions. Wannier functions are actively being applied to a wide range of phenomena in…

材料科学 · 物理学 2021-12-22 Jae-Mo Lihm , Cheol-Hwan Park

We employ first principles density-functional theory (DFT) and the Bethe-Salpeter equation (BSE) in the framework of tight-binding based maximally localized Wannier functions (MLWF-TB) model to investigate the electronic and optical…

Epitaxial bilayer silicon oxide is a transferable two-dimensional material predicted to be a wide band gap semiconductor, with potential applications for deep UV optoelectronics, or as a building block of van der Waals heterostructures. The…

We report the infrared transmission measurement on electrically gated twisted bilayer graphene. The optical absorption spectrum clearly manifests the dramatic changes such as the splitting of inter-linear-band absorption step, the shift of…

In this work we use first-principles density-functional theory (DFT) calculations combined with the maximally localized Wannier function tight binding Hamiltonian (MLWF-TB) and Bethe-Salpeter equation (BSE) formalism to investigate…

The quantum geometric properties of typical diamond-type (C, Si, Ge) and zincblende-type (GaAs, InP, etc) semiconductors are investigated by means of the $sp^{3}s^{\ast}$ tight-binding model, which allows to calculate the quantum metric of…

强关联电子 · 物理学 2025-10-20 David Porlles , Wei Chen

Wannier functions provide a localized representation of spectral subspaces of periodic Hamiltonians, and play an important role for interpreting and accelerating Hartree-Fock and Kohn-Sham density functional theory calculations in quantum…

计算物理 · 物理学 2018-01-29 Anil Damle , Antoine Levitt , Lin Lin

We experimentally study the dispersion relation of waves in a two-dimensional (2D) defect layer with periodic nanopores that sits on a three-dimensional (3D) photonic band gap crystal made from silicon by CMOS-compatible methods. The…

Atomically precise armchair graphene nanoribbons of width $N=7$ (7-AGNRs) are investigated by scanning tunneling spectroscopy (STS) on Au(111). The analysis of energy-dependent standing wave patterns of finite length ribbons allows, by…

Beyond-diffraction-limit optical absorption spectroscopy provides profound information on the graded band structures of composition-spread and stacked two-dimensional materials, in which direct/indirect bandgap, interlayer coupling,…

We calculate the optical sum associated with the in-plane conductivity of a graphene bilayer. A bilayer asymmetry gap generated in a field-effect device can split apart valence and conduction bands, which otherwise would meet at two K…

介观与纳米尺度物理 · 物理学 2008-04-08 L. Benfatto , S. G. Sharapov , J. P. Carbotte

We introduce a new type of Wannier functions (WFs) obtained by minimizing the conventional spread functional with a penalty term proportional to the variance of the spread distribution. This modified Wannierisation scheme is less prone to…

其他凝聚态物理 · 物理学 2021-11-09 Pietro F. Fontana , Ask H. Larsen , Thomas Olsen , Kristian S. Thygesen

Stacking monolayer semiconductors results in moir\'e patterns that host many correlated and topological electronic phenomena, but measurements of the basic electronic structure underpinning these phenomena are scarce. Here, we investigate…

Band gap of monolayer and few layers in two dimensional (2D) semiconductors has usually been measured by optical probing such as photoluminescence (PL). However, if their exfoliated thickness is as large as a few nm (multilayer over ~5L),…

应用物理 · 物理学 2020-03-05 Sam Park , June Yeong Lim , Sanghyuck Yu , Kyunghee Choi , Jungcheol Kim , Hyeonsik Cheong , Seongil Im

We study the 2D Raman band of in-plane uniaxially strained graphene within a non-orthogonal tight-binding model. At non-zero strain, the obtained 2D band splits into two subbands at strain angles $0^{\circ}$ and $30^{\circ}$ or into three…

介观与纳米尺度物理 · 物理学 2013-06-11 Valentin N. Popov , Philippe Lambin

An electro-absorption optical modulator concept based upon a dual-graphene layer is presented. The device consists of a silicon-on-insulator waveguide upon which two graphene layers reside, separated by a thin insulating region. The lower…

光学 · 物理学 2012-05-21 Steven J. Koester , Mo Li

Within the expansive domain of optical sciences, achieving the precise characterization of light beams stands as a fundamental pursuit, pivotal for various applications, including telecommunications and imaging technologies. This study…

光学 · 物理学 2024-10-04 Alejandro R. Urzúa , Irán Ramos-Prieto , Héctor M. Moya-Cessa

The electronic band structure of atomically thin semiconductors can be tuned by the application of a perpendicular electric field. The principle was demonstrated experimentally shortly after the discovery of graphene by opening a finite…

介观与纳米尺度物理 · 物理学 2022-08-23 Daniil Domaretskiy , Marc Philippi , Marco Gibertini , Nicolas Ubrig , Ignacio Gutiérrez-Lezama , Alberto F. Morpurgo
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