相关论文: Superionic Fluoride Gate Dielectrics with Low Diff…
We report a new strategy for fabricating 2D/2D low-resistance ohmic contacts for a variety of transition metal dichalcogenides (TMDs) using van der Waals assembly of substitutionally doped TMDs as drain/source contacts and TMDs with no…
Moir\'e materials have enabled the realization of flat electron bands and quantum phases that are driven by strong correlations associated with flat bands. Superconductivity has been observed, but solely, in graphene moir\'e materials. The…
Superconducting electronics is essential for energy-efficient quantum and classical high-end computing applications. Towards this goal, non-reciprocal superconducting circuit elements, such as superconducting diodes (SDs) can fulfill many…
A common issue in low temperature measurements of enhancement-mode metal-oxide-semiconductor (MOS) field-effect transistors (FETs) in the low electron density regime is the high contact resistance dominating the device impedance. In that…
Semiconducting ferroelectric materials with low energy polarisation switching offer a platform for next-generation electronics such as ferroelectric field-effect transistors. Ferroelectric domains at symmetry-broken interfaces of transition…
Over the last fifteen years, ferroelectric and antiferroelectric ultra thin films based on fluorite-structured materials have drawn significant attention for a wide variety of applications requiring high integration density.…
With advances in exfoliation and synthetic techniques, atomically thin films of semiconducting transition metal dichalcogenides have recently been isolated and characterized. Their two-dimensional structure, coupled with a direct band gap…
The research on supercurrent diodes has surged rapidly due to their potential applications in electronic circuits at cryogenic temperatures. To unlock this functionality, it is essential to find supercurrent diodes that can work…
Superconductivity in flatband systems has attracted tremendous attention in condensed matter physics. Alternating twisted multilayer graphene presents a compelling multiband system, with a coexistence of Dirac bands and flat bands, for…
The electronic properties of interfaces between two different solids can differ strikingly from those of the constituent materials. For instance, metallic conductivity, and even superconductivity, have been recently discovered at interfaces…
Superconducting circuits based on hybrid InAs Josephson Junctions (JJs) play a starring role in the design of fast and ultra-low power consumption solid-state quantum electronics and exploring novel physical phenomena. Conventionally, 3D…
Nanofluidic ionic transistors typically require gate voltages above 1 V and operate only at sub millimolar ionic strengths, limiting their biocompatible applications. We demonstrate ionic transistors consisting of single sub 10 nm nanopores…
We investigate heat and charge transport through a diffusive SIF1F2N tunnel junction, where N (S) is a normal (superconducting) electrode, I is an insulator layer and F1,2 are two ferromagnets with arbitrary direction of magnetization. The…
As the continuing down-scaling of field-effect transistors (FETs) in more-than-Moore integrated circuits, finding new functional two-dimensional (2D) materials with a higher dielectric constant (high-k) serve as gate dielectrics is…
We demonstrate ferroelectric (FE) memory transistors on a crystalline silicon channel with endurance exceeding $10^{10}$ cycles. The ferroelectric transistors (FeFETs) incorporate a high-$\kappa$ interfacial layer (IL) of thermally grown…
Metal-oxide-semiconductor field-effect transistors (MOSFET's) using atomic-layer-deposited (ALD) Al$_2$O$_3$ as the gate dielectric are fabricated on the Si/Si$_{1-x}$Ge$_x$ heterostructures. The low-temperature carrier density of a…
Vanadium dioxide is a correlated electron system that features a metal-insulator phase transition (MIT) above room temperature and is of interest in high speed switching devices. Here, we integrate VO2 into two-terminal coplanar waveguides…
Porous electrodes are fast emerging as essential components for next generation supercapacitors. Using porous structures of Co3O4, Mn3O4, alpha Fe2O3, and carbon, their advantages over the solid counterpart is unequivocally established. The…
Electrostatic gating confines and controls the transport of electrons in integrated circuits. Magnons, the quanta of spin waves of the magnetic order, are promising alternative information carriers, but difficult to gate. Here we report…
The gate-voltage-induced suppression of critical currents in metallic superconductors observed recently [De Simoni et al., Nat. Nanotechnol. 13, 802 (2018)] has raised crucial questions regarding the nature and mechanism of the electric…