相关论文: Superionic Fluoride Gate Dielectrics with Low Diff…

Hybrid normal metal - insulator - superconductor microstructures suitable for studying an interference of electrons were fabricated. The structures consist of a superconducting loop connected to a normal metal electrode through a tunnel…

Over the past few years, there has been a growing interest in layered transition metal dichalcogenides (TMD) such as molybdenum disulfide (MoS2). Most studies so far have focused on the electronic and optoelectronic properties of…

Spin-polarized field-effect transistor (spin-FET), where a dielectric layer is generally employed for the electrical gating as the traditional FET, stands out as a seminal spintronic device under the miniaturization trend of electronics. It…

Two-dimensional (2D) semiconductors have attracted considerable interest for their unique physical properties. Here, we report the intrinsic cryogenic electronic transport properties in few-layer MoSe$_2$ field-effect transistors (FETs)…

Vertical field effect transistors (VFETs) show many advantages such as high switching speed, low operating voltage, low power consumption, and miniaturization over lateral FETs. However, VFET still faces the main challenges of high…

All-optical logic has the potential to overcome the operation speed barrier that has persisted in electronic circuits for two decades. However, the development of scalable architectures has been prevented so far by the lack of materials…

A series of layered CeO$_{1-x}$F$_x$FeAs compounds with x=0 to 0.20 are synthesized by solid state reaction method. Similar to the LaOFeAs, the pure CeOFeAs shows a strong resistivity anomaly near 145 K, which was ascribed to the…

We report on fabrication of novel field-effect transistors (FETs) based on transition metal dichalcogenides. The unique structure of single crystals of these layered inorganic semiconductors enables fabrication of FETs with intrinsically…

Graphene is a promising material for applications as a channel in graphene field-effect transistors (GFETs) which may be used as a building block for optoelectronics, high-frequency devices and sensors. However, these devices require gate…

The elastic, thermodynamic, and electronic properties of fluorite RuO_2 under high pressure are investigated by plane-wave pseudopotential density functional theory. The optimized lattice parameters, elastic constants, bulk modulus, and…

We develop a robust and versatile platform to define nanostructures at oxide interfaces via patterned top gates. Using LaAlO$_3$/SrTiO$_3$ as a model system, we demonstrate controllable electrostatic confinement of electrons to nanoscale…

Very recently a new family of layered materials, containing BiS2 planes was discovered to be superconducting at temperatures up to Tc=10 K, raising questions about the mechanism of superconductivity in these systems. Here, we present…

Atomic-scale ferroelectric thin films hold great promise for high-density, low-power applications but face stability and voltage scaling challenges at extreme thinness. Here, we demonstrate ferroelectricity in single-crystalline…

The metastability of the polar phase in HfO2, despite its excellent compatibility with the complementary metal-oxide-semiconductor process, remains a key obstacle for its industrial applications. Traditional stabilization approaches, such…

Inherent properties of superconducting Bi2Sr2CaCu2O8+x films, such as the high superconducting transition temperature Tc, efficient Josephson coupling between neighboring CuO layers, and fast quasiparticle relaxation dynamics, make them a…

We analyze the distributions of electric potential and field, polarization and charge, and the differential capacitance of a silicon metal-oxide-ferroelectric field effect transistor (MOSFET), in which a gate insulator consists of thin…

We develop a novel field effect transistor (FET) device using solid ion conductor (SIC) as a gate dielectric, and we can tune the carrier density of FeSe by driving lithium ions in and out of the FeSe thin flakes, and consequently control…

Spin-gapless semiconductors (SGSs) are a promising class of materials for spintronic applications, enabling functions beyond conventional electronics. This study introduces a novel design for multifunctional spintronic field-effect…

All-optical integrated circuits for computing and information processing have been pursued for decades as a potential strategy to overcome the speed limitations intrinsic to electronics. However feasible on-chip integrated logic units and…

Local control of superconducting circuits by high-impedance electrical gates offers potential advantages in superconducting logic, quantum processing units, and cryoelectronics. Recent experiments have reported gate-controlled supercurrent…