Over the last fifteen years, ferroelectric and antiferroelectric ultra thin films based on fluorite-structured materials have drawn significant attention for a wide variety of applications requiring high integration density. Antiferroelectric ZrO2, in particular, holds significant promise for nanosupercapacitors, owing to its potential for high energy storage density (ESD) and high efficiency (η). This work assesses the potential of high-performance Hf1−xZrxO2 thin films encapsulated by TiN electrodes that show linear dielectric (LD), ferroelectric (FE), and antiferroelectric (AFE) behavior. Oxides on silicon are grown by magnetron sputtering and plasma-enhanced atomic layer deposition. ESD and η are compared for FE, AFE, and LD samples at the same electrical field (3.5 MV/cm). As expected, ESD is higher for the FE sample (95J/cm3), but η is ridiculously small (≈ 55%), because of the opening of the FE hysteresis curve inducing high loss. Conversely, LD samples exhibit the highest efficiency (nearly 100%), at the expense of a lower ESD. AFE ZrO2 thin film strikes a balance between FE and LD behavior, showing reduced losses compared to the FE sample but an ESD as high as 52J/cm3 at 3.5 MV/cm. This value can be further increased up to 84J/cm3 at a higher electrical field (4.0 MV/cm), with an η of 75%, among the highest values reported for fluorite-structured materials, offering promising perspectives for future optimization.
@article{arxiv.2405.09345,
title = {Comparative Performance of Fluorite-Structured Materials for Nanosupercapacitor Applications},
author = {Grégoire Magagnin and Jordan Bouaziz and Martine Le Berre and Sara Gonzalez and Damien Deleruyelle and Bertrand Vilquin},
journal= {arXiv preprint arXiv:2405.09345},
year = {2024}
}