Ferroelectricity in layered bismuth oxide down to 1 nanometer
Abstract
Atomic-scale ferroelectrics are of great interest for high-density electronics, particularly field-effect transistors, low-power logic, and nonvolatile memories. We devised a film with a layered structure of bismuth oxide that can stabilize the ferroelectric state down to 1 nanometer through samarium bondage. This film can be grown on a variety of substrates with a cost-effective chemical solution deposition. We observed a standard ferroelectric hysteresis loop down to a thickness of ~1 nanometer. The thin films with thicknesses that range from 1 to 4.56 nanometers possess a relatively large remanent polarization from 17 to 50 microcoulombs per square centimeter. We verified the structure with first-principles calculations, which also pointed to the material being a lone pair-driven ferroelectric material. The structure design of the ultrathin ferroelectric films has great potential for the manufacturing of atomic-scale electronic devices.
Cite
@article{arxiv.2501.09549,
title = {Ferroelectricity in layered bismuth oxide down to 1 nanometer},
author = {Qianqian Yang and Jingcong Hu and Yue-Wen Fang and Yueyang Jia and Rui Yang and Shiqing Deng and Yue Lu and Oswaldo Dieguez and Longlong Fan and Dongxing Zheng and Xixiang Zhang and Yongqi Dong and Zhenlin Luo and Zhen Wang and Huanhua Wang and Manling Sui and Xianran Xing and Jun Chen and Jianjun Tian and Linxing Zhang},
journal= {arXiv preprint arXiv:2501.09549},
year = {2025}
}
Comments
preprint, 27 pages, 5 figures