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Excitons in van der Waals (vdW) stacking interfaces can be trapped in ordered moire potential arrays giving rise to attractive phenomenons of quantum optics and bosonic many-body effects. Compare to the prevalent transition metal…

We present an \textit{ab initio} method to calculate phonon-assisted absorption and emission spectra in the presence of strong excitonic effects. We apply the method to bulk hexagonal BN which has an indirect band gap and is known for its…

The coherent manipulation of excitons in bulk semiconductors via the lattice degrees of freedom is key to the development of acousto-optic and acousto-excitonic devices. Wide-bandgap transition metal oxides exhibit strongly bound excitons…

Recent measurements have shown that a continuously tunable bandgap of up to 250 meV can be generated in biased bilayer graphene [Y. Zhang et al., Nature 459, 820 (2009)], opening up pathway for possible graphene-based nanoelectronic and…

材料科学 · 物理学 2010-02-11 Cheol-Hwan Park , Steven G. Louie

With the ever-growing interest in quantum computing, understanding the behaviour of excitons in monolayer quantum dots has become a topic of great relevance. In this paper, we consider a Wannier exciton confined in a triangular quantum dot…

介观与纳米尺度物理 · 物理学 2022-12-08 M. F. C. Martins Quintela , N. M. R. Peres

Charge-transfer excitons possessing long radiative lifetime and net permanent dipole moment are highly appealing for quantum dot (QD) based energy harvesting and photodetecting devices, in which the efficiency of charge separation after…

介观与纳米尺度物理 · 物理学 2022-07-13 Yamei Zhou , Christos S. Garoufalis , Zaiping Zeng , Sotirios Baskoutas , Yu Jia , Zuliang Du

We investigate the electronic structure and the optical absorption onset of close-to-30\degree twisted hexagonal boron nitride bilayers. Our study is carried out with a purposely developed tight-binding model validated against DFT…

材料科学 · 物理学 2024-05-22 Lorenzo Sponza , Van Binh Vu , Elisa Serrano Richaud , Hakim Amara , Sylvain Latil

Excitons, or bound electron-hole pairs, play a crucial role in the optical response of monolayer, 2H-phase transition-metal dichalcogenides (TMDs). They hold significant promise for the development of novel quantum opto-electronic devices…

材料科学 · 物理学 2024-03-29 Sebastian Yepez Rodriguez , Marshall A. Campbell , Jinyu Liu , Luis A. Jauregui

Quantum confining excitons has been a persistent challenge in the pursuit of strong exciton interactions and quantum light generation. Unlike electrons, which can be readily controlled via electric fields, imposing strong nanoscale…

介观与纳米尺度物理 · 物理学 2025-01-22 Liuxin Gu , Lifu Zhang , Sam Felsenfeld , Rundong Ma , Suji Park , Houk Jang , Takashi Taniguchi , Kenji Watanabe , You Zhou

Boron nitride single layer belongs to the family of 2D materials whose optical properties are currently receiving considerable attention. Strong excitonic effects have already been observed in the bulk and still stronger effects are…

Hexagonal boron nitride is an indirect band gap material with a strong luminescence in the ultraviolet. This luminescence originates from bound excitons recombination assisted by different phonon modes. The coupling between excitons and…

材料科学 · 物理学 2022-05-05 Pierre Lechifflart , Fulvio Paleari , Claudio Attaccalite

Photoexcited electron-hole pairs (excitons) in transition metal dichalcogenides (TMDC) experience an effective force when these materials are non-uniformly strained. In the case of strain produced by a sharp tip pressing at the center of a…

介观与纳米尺度物理 · 物理学 2025-10-16 Moshe G. Harats , Kirill I. Bolotin

A new interpretation of the optical and energy-loss spectra of hexagonal boron nitride is provided based on first-principle calculations. We show that both spectra cannot be explained by independent-particle transitions but are strongly…

材料科学 · 物理学 2007-05-23 Ludger Wirtz , Andrea Marini , Myrta Gruning , Angel Rubio

The calculated quasiparticle band structure of bulk hexagonal boron nitride using the all-electron GW approximation shows that this compound is an indirect-band-gap semiconductor. The solution of the Bethe-Salpeter equation for the…

材料科学 · 物理学 2009-11-11 B. Arnaud , S. Lebègue , P. Rabiller , M. Alouani

Hexagonal boron nitride is a wide bandgap semiconductor with a very high thermal and chemical stability often used in devices operating under extreme conditions. The growth of high-purity crystals has recently revealed the potential of this…

材料科学 · 物理学 2016-05-04 G. Cassabois , P. Valvin , B. Gil

The twisted hexagonal boron nitride (hBN) bilayer has demonstrated exceptional properties, particularly the existence of electronic flat bands without needing a magic angle, suggesting strong excitonic effects. Therefore, a systematic…

Excitons in biased bilayer graphene are electrically tunable optical excitations residing in the mid-infrared (MIR) spectral range, where intrinsic optical transitions are typically scarce. Such a tunable material system with an excitonic…

光学 · 物理学 2025-11-11 Tomer Eini , N. M. R. Peres , Yarden Mazor , Itai Epstein

Using the tight-binding model, we report a gap opening in the energy spectrum of the twisted bilayer graphene under the application of pressure, that can be further amplified by the presence of a perpendicular bias voltage. The valley edges…

介观与纳米尺度物理 · 物理学 2025-03-27 V. G. M. Duarte , D. R. da Costa , N. M. R. Peres , L. K. Teles , A. J. Chaves

Monolayer and few-layer phosphorene are anisotropic quasi-two-dimensional (quasi-2D) van der Waals (vdW) semiconductors with a linear-dichroic light-matter interaction and a widely-tunable direct-band gap in the infrared frequency range.…

A quantitative analysis of the excitonic luminescence efficiency in hexagonal boron nitride (hBN) is carried out by cathodoluminescence in the ultraviolet range and compared with zinc oxide and diamond single crystals. A high quantum yield…

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