相关论文: AlGaN/AlN heterostructures: an emerging platform f…
N-polar aluminum nitride (AlN) is an important building block for next-generation high-power RF electronics. We report successful homoepitaxial growth of N-polar AlN by molecular beam epitaxy (MBE) on large-area cost-effective N-polar AlN…
Scandium aluminum nitride (ScAlN) has recently emerged as an attractive material for integrated photonics due to its favorable nonlinear optical properties and compatibility with CMOS fabrication. Despite the promising and versatile…
Aluminum scandium nitride (AlScN) is a promising barrier material for gallium nitride (GaN)-based transistors for the next generation of radio-frequency electronic devices. In this work, we examine the transport properties of two…
Integrated photonics has profoundly impacted a wide range of technologies underpinning modern society. The ability to fabricate a complete optical system on a chip offers unrivalled scalability, weight, cost and power efficiency. Over the…
Photonics has been one of the primary beneficiaries of advanced silicon manufacturing. By leveraging on mature complementary metal-oxide-semiconductor (CMOS) process nodes, unprecedented device uniformities and scalability have been…
Analog photonic solutions offer unique opportunities to address complex computational tasks with unprecedented performance in terms of energy dissipation and speeds, overcoming current limitations of modern computing architectures based on…
High-order harmonics generation (HHG) is the only process that enables table-top-size sources of extreme-ultraviolet (XUV) light. The HHG process typically involves light interactions with gases or plasma-material phases that hinder wider…
Aluminum nitride (AlN) has been widely used in microeletromechanical resonators for its excellent electromechanical properties. Here we demonstrate the use of AlN as an optomechanical material that simultaneously offer low optical and…
Atomic-layer and two-dimensional (2D) materials have emerged as essential building blocks for next-generation quantum and semiconductor technologies, where atomic-scale control over light-matter interactions is critical. However, their…
Quantum photonic chips, which integrate quantum light sources alongside active and passive optical elements, as well as single photon detectors, show great potential for photonic quantum information processing and quantum technology. Mature…
High Q-factors of microresonators are crucial for nonlinear integrated photonics, as many nonlinear dynamics have quadratic or even cubic dependence on Q-factors. The unique material properties make AlN microresonators invaluable for…
Integrated photonic devices operating via optical nonlinearities offer a powerful solution for all optical information processing, yielding processing speeds that are well beyond that of electronic processing as well as providing the added…
Lithium niobate (LN), an outstanding and versatile material, has influenced our daily life for decades: from enabling high-speed optical communications that form the backbone of the Internet to realizing radio-frequency filtering used in…
We demonstrate high optical quality factors in aluminum nitride (AlN) photonic crystal nanobeam cavities. Suspended AlN photonic crystal nanobeams are fabricated in sputter-deposited AlN-on-insulator substrates using a self-protecting…
The rapid expansion of cloud computing and artificial intelligence has driven the demand for faster optical components in data centres to unprecedented levels. A key advancement in this field is the integration of multiple photonic…
Ternary compounds obtained by alloying wurtzite AlN with transition metals have emerged as promising materials with significantly enhanced piezoelectric characteristics relative to binary AlN. The increased electromechanical coupling in…
Intersubband optoelectronic devices rely on transitions between quantum-confined electron levels in semiconductor heterostructures, which enables infrared (IR) photodetection in the 1-30 $\mu$m wavelength window with picosecond response…
Transition metal dichalcogenides (TMD) monolayers, holding potential as good sunlight absorbers, are promising materials for next-generation optoelectronic devices. They may enable ultrathin photovoltaic(PV) devices thanks to their…
Amorphous silicon carbide (a-SiC) has emerged as a compelling candidate for applications in integrated photonics, known for its high refractive index, high optical quality, high thermo-optic coefficient, and strong third-order…
Nonlinear optics plays an important role in many areas of science and technology. The advance of nonlinear optics is empowered by the discovery and utilization of materials with growing optical nonlinearity. Here we demonstrate an indium…