相关论文: AlGaN/AlN heterostructures: an emerging platform f…
The inherently weak nonlinear optical response of bulk materials remains a fundamental limitation in advancing photonic technologies. Nanophotonics addresses this challenge by tailoring the size and morphology of nanostructures to…
The microscale integration of mid- and longwave-infrared photonics could enable the development of fieldable, robust chemical sensors, as well as highly efficient infrared frequency converters. However, such technology would be defined by…
The AlGaN/GaN quantum-well heterostructures typically exhibit a positive photoconductivity (PPC) during the light illumination. Surprisingly, we found that introducing the GaN/AlN superlattice (SL) back barrier into N-polar AlGaN/GaN…
Entangled-photon pairs are an essential resource for quantum information technologies. Chip-scale sources of entangled pairs have been integrated with various photonic platforms, including silicon, nitrides, indium phosphide, and lithium…
The integration of second-order optical nonlinearities into scalable photonic platforms remains a key challenge due to their large sensitivity to fabrication variations. Here, we present a scalable quadratic nonlinear platform that…
Achieving monolithic integration of passive acoustic wave devices, in particular RF filters, with active devices such as RF amplifiers and switches, is the optimal solution to meet the challenging communication requirements of mobile…
Gallium phosphide (GaP) is an indirect bandgap semiconductor used widely in solid-state lighting. Despite numerous intriguing optical properties---including large $\chi^{(2)}$ and $\chi^{(3)}$ coefficients, a high refractive index ($>3$),…
The existing silicon-carbide-on-insulator photonic platform utilizes a thin layer of silicon dioxide under silicon carbide to provide optical confinement and mode isolation. Here, we replace the underneath silicon dioxide layer with a…
Heterogeneous integration of gain and strongly nonlinear materials with ultra-low-loss silicon nitride (SiN) photonics offers a route to scalable quantum circuits, but concurrent wafer-scale manufacturability, low interlayer loss, and high…
The explosive growth of artificial intelligence, cloud computing, and large-scale machine learning is driving an urgent demand for short-reach optical interconnects featuring large bandwidth, low power consumption, high integration density,…
Fully CMOS-compatible photonic memory holding devices hold a potential in a development of ultrafast artificial neural networks. Leveraging the benefits of photonics such as high-bandwidth, low latencies, low-energy interconnect and high…
Integrated photonics has enabled signal synthesis, modulation and conversion using photonic integrated circuits (PIC). Many materials have been developed, among which silicon nitride (Si$_3$N$_4$) has emerged as a leading platform…
We have characterized the photodetection capabilities of single GaN nanowires incorporating 20 periods of AlN/GaN:Ge axial heterostructures enveloped in an AlN shell. Transmission electron microscopy confirms the absence of an additional…
Graphene has emerged as an ultrafast photonic material for on-chip all-optical modulation. However, its atomic thickness limits its interaction with guided optical modes, which results in a high switching energy per bit or low modulation…
The demand for integrated photonic chips combining the generation and manipulation of quantum states of light is steadily increasing, driven by the need for compact and scalable platforms for quantum information technologies. While photonic…
Integrated quantum light source is increasingly desirable in large-scale quantum information processing.~Despite recent remarkable advances, new material platform is constantly being explored for the fully on-chip integration of quantum…
Rapidly growing demands for fast information processing have launched a race for creating compact and highly efficient optical devices that can reliably transmit signals without losses. Recently discovered topological phases of light…
Gallium nitride (GaN) has emerged as an essential semiconductor material for energy-efficient lighting and electronic applications owing to its large direct bandgap of 3.4 eV. Present GaN/AlGaN heterostructures seemingly feature an…
We present a systematic study of top-down processed GaN/AlN heterostructures for intersubband optoelectronic applications. Samples containing quantum well superlattices that display either near- or mid-infrared intersubband absorption were…
Nonlinear nanophotonics leverages engineered nanostructures to funnel light into small volumes and intensify nonlinear optical processes with spectral and spatial control. Due to its intrinsically large and electrically tunable nonlinear…