相关论文: AlGaN/AlN heterostructures: an emerging platform f…
Electro-optic modulators are fundamental components in atomic physics experiments, including trapped-ion systems used in precision metrology and quantum computing. To enable scalable photonic integration, we design and analyze an integrated…
Efficient solid-state photon emitters with longer operating lifetimes in the ultraviolet (UV) wavelength range are crucial for optoelectronic devices. However, finding suitable material candidates has been a significant challenge. Here, we…
In recent years, aluminum nitride (AlN) has emerged as an attractive material for integrated photonics due to its low propagation losses, wide transparency window, and presence of both second- and third-order optical nonlinearities.…
The recent progress in integrated quantum optics has set the stage for the development of an integrated platform for quantum information processing with photons, with potential applications in quantum simulation. Among the different…
We demonstrate integrated photonic circuits for quantum devices using sputtered polycrystalline aluminum nitride (AlN) on insulator. The on-chip AlN waveguide directional couplers, which are one of the most important components in quantum…
We demonstrate second order optical nonlinearity in a silicon architecture through heterogeneous integration of single-crystalline gallium nitride (GaN) on silicon (100) substrates. By engineering GaN microrings for dual resonance around…
This work proposes and analyses a novel approach for the generation of separable (quantum uncorrelated) photon pairs based on spontaneous parametric down-conversion in Bragg reflection waveguides composed of semiconductor AlGaN layers. This…
AlGaN plays a vital role in hetero-structure high electron mobility transistor by employing a two-dimensional electron gas and as electron blocking layer in the multi quantum well light emitting diodes. Nevertheless, the incorporation of Al…
Nonlinear photonic chips are capable of generating and processing signals all-optically with performance far superior to that possible electronically - particularly with respect to speed. Although silicon has been the leading platform for…
Gallium nitride (GaN), as a promising alternative semiconductor to silicon, is of well-established use in photoelectronic and electronic technology. However, the vulnerable GaN surface has been a critical restriction that hinders the…
Aluminum Indium Nitride (AlInN) alloys offer great potential for photovoltaic devices thanks to their wide direct bandgap energy that covers the solar spectrum from 0.7 eV (InN) to 6.2 eV (AlN), and their superior resistance to high…
This study presents a comprehensive simulation-based optimization of gallium nitride (GaN)-based metal-semiconductor-metal (MSM) photodetectors designed for ultraviolet (UV) applications. The proposed device architecture incorporates a…
In this paper we present a reliable process to fabricate GaN/AlGaN one dimensional photonic crystal (1D-PhC) microcavities with nonlinear optical properties. We used a heterostructure with a GaN layer embedded between two Distributed Bragg…
Entangled photons provide non-classical correlations that enable measurement sensitivities beyond classical limits, scalable fault-tolerant quantum computation, and fundamentally secure quantum communication, making them a foundational…
We demonstrate wideband integrated photonic circuits in sputter-deposited aluminum nitride (AlN) thin films. At both near-infrared and visible wavelengths, we achieve low propagation loss in integrated waveguides and realize high-quality…
Flat-optics platforms offer new opportunities for the generation of entangled photons by relaxing traditional phase-matching constraints, enabling the use of a broader range of nonlinear materials. Among these, gallium arsenide and aluminum…
Tremendous scientific progress has been achieved through the development of nonlinear integrated photonics. Prominent examples are Kerr-frequency-comb generation in micro-resonators, and supercontinuum generation and frequency conversion in…
Integrated nonlinear photonic circuits received rapid development in recent years, providing all-optical functionalities enabled by cavity-enhanced photon-photon interaction for classical and quantum applications. A high-efficiency…
The integration of solid-state single-photon sources with foundry-compatible photonic platforms is crucial for practical and scalable quantum photonic applications. This study investigates aluminum nitride (AlN) as a material with…
The lattice mismatch between AlGaN and AlN substrates limits the design and efficiency of UV LEDs, but it can be mitigated by the co-incorporation of boron. We employ hybrid density functional theory to investigate the thermodynamic,…