相关论文: Electrical resistance associated with the scatteri…

Recently reported optical nuclear orientation in the $n$-doped GaAs microcavity under pumping in nominal transparency region of the crystal [Appl. Phys. Lett. $\mathbf{106}$, 242405 (2015)] has arisen a number of questions, the main of them…

We report on optical orientation of Mn^2+ in bulk GaAs under application of weak longitudinal magnetic field (B <= 100 mT). The manganese spin polarization of 25% is directly evaluated using spin flip Raman scattering spectroscopy. The…

The optical spin orientation effect in a GaAs/(Ga,Al)As quantum well containing a high-mobility 2D electron gas was found to be due to spin-polarized minority carriers, the holes. The observed oscillations of both the intensity and…

Because of spin-orbit interaction, an electrical current is accompanied by a spin current resulting in spin accumulation near the sample edges. Due again to spin-orbit interaction this causes a small decrease of the sample resistance. An…

We present a detailed experimental and theoretical analysis of the optical orientation of electron spins in GaAs/AlAs quantum wells. Using time and polarization resolved photoluminescence excitation spectroscopy, the initial degree of…

Elastic scattering of electron vortex beams on magnetic materials leads to a weak magnetic contrast due to Zeeman interaction of orbital angular momentum of the beam with magnetic fields in the sample. The magnetic signal manifests itself…

The diversity of various manganese types and its complexes in the Mn-doped ${\rm A^{III}B^V}$ semiconductor structures leads to a number of intriguing phenomena. Here we show that the interplay between the ordinary substitutional Mn…

We find that photoexcited electrons in an n-GaAs epilayer rapidly (< 50 ps) spin-polarize due to the proximity of an epitaxial ferromagnetic metal. Comparison between MnAs/GaAs and Fe/GaAs structures reveals that this coherent spin…

Magnetoresistive effects are usually invariant upon inversion of the magnetization direction. In noncentrosymmetric conductors, however, nonlinear resistive terms can give rise to a current dependence that is quadratic in the applied…

The scattering of conduction electrons off neutral donors depends sensitively on the relative orientation of their spin states. We present a theory of spin-dependent scattering in the two dimensional electron gas (2DEG) of field effect…

A spin-dependent emission of optically oriented electrons from p-GaAs(Cs,O) into vacuum was experimentally observed in a magnetic field normal to the surface. This phenomenon is explained within the model which takes into account the jump…

We suggest an approach for characterizing the zero-field spin splitting of high mobility two-dimensional electron systems, when beats are not readily observable in the Shubnikov-de Haas effect. The zero-field spin splitting and the…

The magnetoresistance of a low carrier density, disordered GaAs based two-dimensional (2D) electron gas has been measured in parallel magnetic fields up to 32 T. The feature in the resistance associated with the complete spin polarization…

Modern electronic devices utilize charge to transmit and store information. This leaves the information susceptible to external influences, such as radiation, that can introduce short timescale charge fluctuations and, long term, degrade…

Manifestations of quantum interference effects in macroscopic objects are rare. Weak localization is one of the few examples of such effects showing up in the electron transport through solid state. Here we show that weak localization…

Optical absorption of circularly polarized light is well known to yield an electron spin polarization in direct band gap semiconductors. We demonstrate that electron spins can even be generated with high efficiency by absorption of linearly…

Electric current-induced magnetoresistance oscillations recently discovered in two-dimensional electron systems are analyzed using a microscopic scheme for nonlinear magnetotransport direct controlled by the current. The magnetoresistance…

A new electron focusing effect has been discovered in small single and coupled GaAs/AlGaAs rings. The focusing in the single ring is attributed solely to internal orbits. The focusing effect allows the ring to be used as a small mass…

Processes which flip the spin of an electron tunneling in a junction made up of magnetic electrodes are studied. It is found that: i) Magnetic impurities give a contribution which increases the resistance and lowers the magnetoresistance,…

We predict two spin-dependent transport phenomena in two-dimensional electron systems, which are induced by spatially fluctuating Rashba spin-orbit interaction. When the electron gas is magnetized, the random Rashba interaction leads to the…