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相关论文: Valence band electronic structure of Pd based tern…

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We present a comparative study of our valence band photoemission results on Nb2Pd1.2Se5 and Nb2Pd0.95S5 superconductors which is supported by our DFT based electronic structure calculations. We observe that the VB spectra of both the…

超导电性 · 物理学 2023-10-31 H. Lohani , P. Mishra , R. Goyal , V. P. S. Awana , B. R. Sekhar

We investigate the electronic structure of ternary palladates $A$Pd$_3$O$_4$ ($A$ = Sr, Ca) using valence band photoemission spectroscopy and band structure calculations. Overall width of the valence band and energy positions of various…

强关联电子 · 物理学 2024-04-25 B. H. Reddy , Asif Ali , Ravi Shankar Singh

We report the electronic structure and related properties of the superconductor Ta2PdSe5 as determined from density functional calculations. The Fermi surface has two disconnected sheets, both derived from bands of primarily chalcogenide p…

超导电性 · 物理学 2015-04-28 David J. Singh

The valence band (VB) structure of an Al0.5TiZrPdCuNi high-entropy alloy (HEA) obtained from X-ray photoelectron spectroscopy has been compared to that recently calculated by Odbadrakh et al, 2019. Both experimental and theoretical VBs show…

Manganese-doped tin telluride, Sn(1-x)Mn(x)Te, initially investigated as diluted magnetic semiconductor, has recently attracted considerable attention as a prospective thermoelectric material. The introduction of Mn was found to modify the…

材料科学 · 物理学 2026-01-09 Elzbieta Guziewicz , Bronislaw A. Orlowski , Bogdan J. Kowalski

The transition metal chalcogenide Ta$_2$NiSe$_5$ undergoes a second-order phase transition at $T_c=328$ K involving a small lattice distortion. Below $T_c$, a band gap at the center of its Brillouin zone increases up to about 0.35 eV. In…

Valence-band and conduction-band electronic structure of CrS (d=0) and Cr5S6 (d=0.17) has been investigated by means of photoemission and inverse-photoemission spectroscopies. Bandwidth of the valence bands of Cr5S6 (8.5 eV) is wider than…

材料科学 · 物理学 2009-11-07 M. Koyama , H. Sato , Y. Ueda , C. Hirai , M. Taniguchi

The electronic band structure of complex nanostructured semiconductors has a considerable effect on the final electronic and optical properties of the material and, ultimately, on the functionality of the devices incorporating them. Valence…

Using angle-resolved photoemission spectroscopy (ARPES), we studied bulk and surface electronic band structures of narrow-gap semiconductor lead telluride (PbTe) thin films grown by molecular beam epitaxy both perpendicular and parallel to…

材料科学 · 物理学 2017-04-26 Zhenyu Ye , Shengtao Cui , Tianyu Shu , Songsong Ma , Yang Liu , Zhe Sun , Jun-Wei Luo , Huizhen Wu

The electronic structure of crystalline CdTe, CdO, $\alpha$-TeO$_2$, CdTeO$_3$ and Cd$_3$TeO$_6$ is studied by means of first principles calculations. The band structure, total and partial density of states, and charge densities are…

The electronic structure of semiconducting 2D materials such as transition metal dichalcogenides (TMDs) is known to be tunable by its environment, from simple external fields applied with electrical contacts up to complex van der Waals…

We have performed x-ray photoemission spectroscopy on the system of noncentrosymmetric superconductor, Li$_2$(Pd$_x$Pt$_{1-x}$3)B. For Li$_2$Pt$_3$B, we found 2 major peaks with 2 other weak components, and the band calculations were in…

The emergence of transition metal dichalcogenides (TMDs) as 2D electronic materials has stimulated proposals of novel electronic and photonic devices based on TMD heterostructures. Here we report the determination of band offsets in TMD…

We investigate the electronic structure of a complex conventional superconductor, ZrB12 employing high resolution photoemission spectroscopy and ab initio band structure calculations. The experimental valence band spectra could be described…

超导电性 · 物理学 2013-12-03 S. Thakur , D. Biswas , N. Sahadev , P. K. Biswas , G. Balakrishnan , K. Maiti

We present a comparison of electronic structure of MgB2 and TaB2, the two new superconductors, as well as VB2, calculated using full-potential, density- functional-based methods in P6/mmm crystal structure. Our results, described in terms…

超导电性 · 物理学 2007-05-23 Prabhakar P. Singh

Various ternary chalcogenide systems and their properties are one of the hot topics for researchers nowadays. In this article, one of the ternary chalcogenide compounds, CdTl2Te4 is studied including its electronic structures and optical…

材料科学 · 物理学 2020-05-11 Aditya Dey

The electronic structure of the unconventional superconductor UTe$_2$ was studied by resonant photoelectron spectroscopy (RPES) and angle-resolved photoelectron spectroscopy (ARPES) with soft X-ray synchrotron radiation. The partial…

Among the quasi one-dimensional transition metal tetrachalcogenides (MSe$_4$)$_n$I (M=Nb,Ta), the $n=3$ compounds are the only ones not displaying charge density waves. Instead, they show structural transitions with puzzling transport…

超导电性 · 物理学 2022-12-21 Irián Sánchez-Ramírez , Maia G. Vergniory , Claudia Felser , Fernando de Juan

IV-VI semiconductor SnSe has been known as the material with record high thermoelectric performance.The multiple close-to-degenerate valence bands in the electronic band structure has been one of the key factors contributing to the high…

We study the electronic structure of Ta2NiSe5 in its low-temperature semiconducting phase, using resonant inelastic x-ray scattering (RIXS) at the Ta L3 edge. We also investigate the electronic properties of Ta2NiSe5 within the…

强关联电子 · 物理学 2024-12-23 D. A. Kukusta , L. V. Bekenov , A. N. Yaresko , K. Ishii , T. Takayama , H. Takagi , V. N. Antonov
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