相关论文: A Non-Hermitian Moir\'{e} Valley Filter
The existence of two-inequivalent valleys in the band structure of graphene has motivated the search of mechanisms that allow their separation and control for potential device applications. Among the several schemes proposed in the…
Recently, the Josephson diode effect (JDE), in which the superconducting critical current magnitudes differ when the currents flow in opposite directions, has attracted great interest. In particular, it was demonstrated that gate-defined…
Layered materials can possess valleys that are indistinguishable from one another except for the momentum. These valleys are individually addressable in momentum space at the K and K' points in the first Brillouin zone. Such valley…
We predict the existence and study properties of the valley Hall edge solitons in a composite photonic graphene with a domain wall between two honeycomb lattices with broken inversion symmetry. Inversion symmetry in our system is broken due…
We study spin and valley-dependent transport properties in an n-p-n junction of 8-pmmn borophene monolayer. An external gate voltage and exchange magnetic field, induced by the proximity effect of a ferromagnetic insulator, are applied to…
Valleytronics exploits non-equivalent energy extrema in the electronic band structure of crystalline solids -- the valley degree of freedom -- to encode, manipulate, and read out information. The advent of 2D materials, first graphene and…
We discuss the valley-orbit interaction (VOI) and the concept of VOI based valleytronics. Potential of such valleytronics is illustrated, with graphene as an example material, in several frontier applications comprising FETs, quantum…
Non-volatile manipulation of valley polarization in solids has long been desired for valleytronics applications but remains challenging. Here, we propose a novel strategy for non-volatile manipulating valleys through bilayer stacking, which…
We develop a microscopic theory for nonlinear optical response of moir\'e exciton-polaritons in bilayers of transition metal dichalcogenides (TMDs). Our theory allows to study the tunnel-coupled intralayer and interlayer excitonic modes for…
Electrons in graphene, in addition to their spin, have two pseudospin degrees of freedom: sublattice and valley pseudospin. Valleytronics uses the valley degree of freedom as a carrier of information similar to the way spintronics uses…
A two-dimensional honeycomb lattice harbors a pair of inequivalent valleys in the k-space electronic structure, in the vicinities of the vertices of a hexagonal Brillouin zone, K}$_{\pm}$. It is particularly appealing to exploit this…
Exchange coupling is a key ingredient for spin-based quantum technologies since it can be used to entangle spin qubits and create logical spin qubits. However, the influence of the electronic valley degree of freedom in silicon on exchange…
We propose a realization of pure spin currents and perfect valley filter based on a quantum anomalous Hall insulator, around which edge states with up-spin and down-spin circulate. By applying staggered sublattice potential on the strips…
Ballistic point contact (BPC) with zigzag edges in graphene is a main candidate of a valley filter, in which the polarization of the valley degree of freedom can be selected by using a local gate voltage. Here, we propose to detect the…
The valley degree of freedom of electrons in solids has been proposed as a new type of information carriers beyond the electronic charge and spin. Recent experimental demonstrations of the optical orientation of the valley polarization and…
The hydrogenated $\rm{Sb}$ monolayer epitaxially grown on a $\rm{LaFeO_3}$ substrate is a novel type of two-dimensional material hosting quantum spin-quantum anomalous Hall (QS-QAH) states. For a device formed by $\rm{Sb}$ monolayer ribbon,…
The superlattice obtained by aligning a monolayer graphene and boron nitride (BN) inherits from the hexagonal lattice a sixty degrees periodicity with the layer alignment. It implies that, in principle, the properties of the heterostructure…
Electronic and spintronic devices rely on the fact that free charge carriers in solids carry electric charge and spin, respectively. There are, however, other properties of charge carriers that might be exploited in new families of devices.…
Van der Waals heterostructures made of graphene and transition metal dichalcogenides (TMD) are an emerging platform for opto-electronic, -spintronic and -valleytronic devices that could benefit from (i) strong light-matter interactions and…
We study the polarization dependence of optical absorption for the modified Haldane model, which exhibits antichiral edge modes in presence of sample boundaries and has been argued to be realizable in transition metal dichalcogenides or…