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相关论文: A Non-Hermitian Moir\'{e} Valley Filter

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We study the quantum valley Hall effect and related domain wall modes in twisted bilayer graphene at a large commensurate angle. Due to the quantum valley and sub-valley Hall effect, a small deviation from the commensurate angle generates…

介观与纳米尺度物理 · 物理学 2023-09-13 Chiranjit Mondal , Rasoul Ghadimi , Bohm-Jung Yang

The valley transport properties of a superlattice of out-of-plane Gaussians deformations are calculated using a Green's function and a Machine Learning approach. Our results show that periodicity significantly improves the valley filter…

介观与纳米尺度物理 · 物理学 2019-11-14 V. Torres , P. Silva , E. A. T. de Souza , L. A. Silva , D. A. Bahamon

Valleytronics is a rising topic to explore the emergent degree of freedom for charge carriers in energy band edges and has attracted a great interest due to many intriguing quantum phenomena and potential application in information…

Monolayer graphene is an example of materials with multi-valley electronic structure. In such materials, the valley index is being considered as an information carrier. Consequently, relaxation mechanisms leading to loss of valley…

介观与纳米尺度物理 · 物理学 2015-08-28 Péter Boross , András Pályi

In single-layer WSe$_2$, a paradigmatic semiconducting transition metal dichalcogenide, a circularly polarized laser field can selectively excite electronic transitions in one of the inequivalent $K^{\pm}$ valleys. Such selective valley…

介观与纳米尺度物理 · 物理学 2017-08-23 Alejandro Molina-Sánchez , Davide Sangalli , Ludger Wirtz , Andrea Marini

The concept of ferrovalley materials has been proposed very recently. The existence of spontaneous valley polarization, resulting from ferromagnetism, in such hexagonal two-dimensional materials makes nonvolatile valleytronic applications…

材料科学 · 物理学 2018-07-11 Xin-Wei Shen , Wen-Yi Tong , Shi-Jing Gong , Chun-Gang Duan

Modern electronic devices heavily rely on the accurate control of charge and spin of electrons. The emergence of controllable valley degree of freedom brings new possibilities and presents a promising prospect towards valleytronics.…

The valley degree of freedom is one of the most intriguing properties of atomically thin transition metal dichalcogenides. Together with the possibility to address this degree of freedom by valley-contrasting optical selection rules, it has…

Valleytronics in 2D materials - primarily graphene and transition metal dichalcogenides is rooted in the existence of valley flavor but extends far out to the rich dimension of local physics, as reviewed, extensively studied and…

介观与纳米尺度物理 · 物理学 2022-10-06 Feng-Wu Chen , Zheng-Han Huang , Yu-Shu G. Wu

Despite much anticipation of valleytronics as a candidate to replace the ageing CMOS-based information processing, its progress is severely hindered by the lack of practical ways to manipulate valley polarization all-electrically in an…

介观与纳米尺度物理 · 物理学 2017-12-15 Yee Sin Ang , Shengyuan A. Yang , C. Zhang , Zhongshui Ma , L. K. Ang

Strong spin-orbit coupling and inversion symmetry breaking in transition metal dichalcogenide monolayers yield the intriguing effects of valley-dependent optical selection rules. As such, it is possible to substantially polarize valley…

Two-dimensional transition metal dichalcogenide (TMD) semiconductors provide a unique possibility to access the electronic valley degree of freedom using polarized light, opening the way to valley information transfer between distant…

Rapid progress in valleytronics and spintronics is limited by the scarcity of two-dimensional materials that simultaneously provide robust valley splitting and strong spin selectivity. Here we showed that a van der Waals heterostructure…

材料科学 · 物理学 2025-11-11 Vivek Chowdhury , Ahmed Zubair

Monolayer Graphene contains two inequivalent local minimum, valleys, located at $K$ and $K'$ in the Brillouin zone. There has been considerable interest in the use of these two valleys as a doublet for information processing. Herein I…

介观与纳米尺度物理 · 物理学 2020-06-02 Samuel Bladwell

A twisted graphene bilayer exhibits a triangular Moir\'e pattern in the local stacking, that smoothly alternates between the three basic types AA', AB' and BA'. Under an interlayer bias U, the latter two types develop a spectral gap,…

介观与纳米尺度物理 · 物理学 2013-09-26 Pablo San-Jose , Elsa Prada

Since its discovery, Berry phase has been demonstrated to play an important role in many quantum systems. In gapped Bernal bilayer graphene, the Berry phase can be continuously tuned from zero to 2pi, which offers a unique opportunity to…

介观与纳米尺度物理 · 物理学 2020-04-29 Yi-Wen Liu , Zhe Hou , Si-Yu Li , Qing-Feng Sun , Lin He

Despite many reports of valley-related phenomena in graphene and its multilayers, current transport experiments cannot probe valley phenomena without the application of external fields. Here we propose a gate-defined valley splitter as a…

介观与纳米尺度物理 · 物理学 2025-02-26 Juan Daniel Torres Luna , Kostas Vilkelis , Antonio L. R. Manesco

Van der Waals heterostructures promise on-demand designer quantum phases through control of monolayer composition, stacking, twist angle, and external fields. Yet, experimental efforts have been narrowly focused, leaving much of this vast…

材料科学 · 物理学 2025-12-19 Naoto Nakatsuji , Jennifer Cano , Valentin Crépel

2D materials with broken inversion symmetry posses an extra degree of freedom, the valley pseudospin, that labels in which of the two energy-degenerate crystal momenta, K or K', the conducting carriers are located. It has been shown that…

量子物理 · 物理学 2023-09-20 Rui E. F. Silva , Misha Ivanov , Álvaro Jiménez-Galán

Using the tight-binding model, we investigate the valley current of the `low-bi-up' and `low-bi-low' graphene junction, where `low' and `up' are respectively the lower and upper graphene layers extended from the central AB stacking bilayer…

介观与纳米尺度物理 · 物理学 2023-11-01 Ryo Tamura