相关论文: Transport Study of Charge Carrier Scattering in Mo…
In order to provide the best possible performance, modern infrared photodetector designs necessitate extremely precise modeling of the superlattice absorber region. We advance the Rode's method for the Boltzmann transport equation in…
We report the fabrication and characterization of gate-defined hole quantum dots in monolayer and bilayer WSe$_2$. The devices were operated with gates above and below the WSe$_2$ layer to accumulate a hole gas, which for some devices was…
Single-wall carbon nanotubes (SWCNTs) are effectively narrow ribbons of 2D materials with atomically precise edges. They are ideal systems to harness quantum transport straintronics (QTS), i.e. using mechanical strain to control quantum…
Bandstructure effects in PMOS transport of strongly quantized silicon nanowire field-effect-transistors (FET) in various transport orientations are examined. A 20-band sp3d5s* spin-orbit-coupled (SO) atomistic tight-binding model coupled to…
Graphene-like two-dimensional (2D) materials, not only are interesting for their exotic electronic structure and fundamental electronic transport or optical properties but also, hold promises for device miniaturization down to atomic…
Quantum-confined semiconductor structures are the cornerstone of modern-day electronics. Spatial confinement in these structures leads to formation of discrete low-dimensional subbands. At room temperature, carriers transfer among different…
The perturbation of a semiconductor from the thermodynamic equilibrium often leads to the display of nonlinear dynamics and formation of spatiotemporal patterns due to the spontaneous generation of competing processes. Here, we describe the…
Gate tunable p-type multilayer tin mono-sulfide (SnS) field-effect transistor (FET) devices with SnS thickness between 50 and 100 nm were fabricated and studied to understand their performances. The devices showed anisotropic inplane…
We formulate a quantum master equation for the many-particle density matrix of electrons propagating through a single-mode conductor, combining elastic scattering by disorder with time-resolved projective measurements that monitor the…
This work reports the electrical transport and temperature-dependent photoconductivity in tungsten diselenide (WSe2) thin films. The electrical conductivity analysis shows the presence of the three regions with temperature variation. At…
We investigate the propagation of electrons in a circular quantum dot of monolayer Molybdenium disulfide MoS_2, subjected to an electric potential. Using the continuum model, we present analytical expressions for the eigenstates, scattering…
We report electrical transport measurements of arrays of PbSe nanocrystals forming the channels of field effect transistors. We measure the current in these devices as a function of source-drain voltage, gate voltage and temperature.…
We present diagrammatic transport theory including self-consistent nonlinear enhancement and dissipation in the multiple scattering regime. Our model of Vollhardt-W\"olfle transport of photons is fit-parameter-free and raises the claim that…
Quantum transport in the presence of time-dependent drives is dominated by quantum interference and many-body effects at low temperatures. For a periodic driving, the analysis of the full counting statistics revealed the elementary events…
Two-dimensional (2D) crystalline semiconductors hold promise for next-generation electronic devices due to its atomical thickness and consequent properties. Despite years of search, literature-reported 2D semiconductors commonly suffered…
We report a theory for analyzing nonlinear DC transport properties of mesoscopic or nanoscopic normal-superconducting (N-S) systems. Special attention was paid such that our theory satisfies gauge invariance. At the linear transport regime…
In view of its local character, the semiclassical or Boltzmann theory is intrinsically unable to describe transport phenomena on ultrashort space and time scales, and to this purpose genuine quantum-transport approaches are imperative. By…
We report the transport properties of mechanically exfoliated few-layer SnSe$_{2}$ flakes, whose mobility is found with four probe measurements to be ~ 85 cm$^{2}$V$^{-1}$s$^{-1}$ at 300 K, higher than those of the majority of few-layer…
While space-charge-limited current measurements are often used to characterize charge-transport in relatively intrinsic, low-mobility semiconductors, it is currently difficult to characterize lightly or heavily doped semiconductors with…
One-dimensional nanoscale devices, such as semiconductor nanowires (NWs) and single- walled carbon nanotubes (SWNTs), have been intensively investigated because of their potential application of future high-speed electronic, optoelectronic,…