相关论文: Characterization of hydrogenated amorphous silicon…

Hydrogenated amorphous silicon (a-Si:H) has remarkable radiation resistance properties and can be deposited on a lot of different substrates. A-Si:H based particle detectors have been built since mid 1980s as planar p-i-n or Schottky diode…

The HASPIDE (Hydrogenated Amorphous Silicon PIxels DEtectors) project aims at the development of thin hydrogenated amorphous silicon (a-Si:H) detectors on flexible substrates (mostly Polyimide) for beam monitoring, neutron detection and…

The characteristics of a hydrogenated amorphous silicon (a-Si:H) detector are presented here for monitoring in space solar flares and the evolution of large energetic proton events up to hundreds of MeV. The a-Si:H presents an excellent…

Radiation damage tests in hydrogenated amorphous silicon (a-Si:H) flexible flux and dose-measuring devices have been performed with a 3 MeV proton beam, to evaluate combined displacement and total ionizing dose damage. The tested devices…

Hydrogenated Amorphous Silicon (a-Si:H) is a material well known for its intrinsic radiation hardness and is primarily utilized in solar cells as well as for particle detection and dosimetry. Planar p-i-n diode detectors are fabricated…

Amorphous hydrogenated silicon (a-Si:H) is an important material for surface defect passivation of photovoltaic silicon (Si) wafers in order to reduce their recombination losses. The material is however unstable with regards to hydrogen (H)…

The nanostructure of hydrogenated amorphous silicon (a Si:H) is studied by a combination of small-angle X-ray (SAXS) and neutron scattering (SANS) with a spatial resolution of 0.8 nm. The a-Si:H materials were deposited using a range of…

We measure charge transport in hydrogenated amorphous silicon (a-Si:H) using a nanometer scale silicon MOSFET as a charge sensor. This charge detection technique makes possible the measurement of extremely large resistances. At high…

Ultra-high dose rate radiation therapy (FLASH) based on proton irradiation is of major interest for cancer treatments but creates new challenges for dose monitoring. Amorphous hydrogenated silicon is known to be one of the most…

Hybrid integration of plasmonics and Si photonics is a promising architecture for global microprocessor interconnects. To this end, practical plasmonic devices not only should provide athermal, broadband operation over wavelength-scale…

We present new atomistic models of amorphous silicon (a-Si) and hydrogenated amorphous silicon (a-Si:H) surfaces. The a-Si model included 4096 atoms and was obtained using local orbital density functional theory. By analyzing a slab model…

Hydrogenated amorphous silicon (a-Si:H) has garnered considerable attention in the semiconductor industry, particularly for its use in solar cells and passivation layers for high performance silicon solar cells, owing to its exceptional…

The nonlinear characteristics of hydrogenated amorphous silicon nanowires are experimentally demonstrated. A high nonlinear refractive index, n2=1.19 x 10-17 m2/W, combined with a low two-photon absorption, 0.14 x 10-11 m/W, resulted in a…

Strip and pixels sensors, fabricated on high resistivity silicon substrate, normally of p-type, are used in detectors for High Energy Physics (HEP) typically in a hybrid detector assembly. Furthermore, and owing to their inherent advantages…

Photonic ultrasound sensors offer unparalleled potential for improving spatial and temporal resolution in ultrasound imaging applications due to their size-independent noise figure, high sensitivity, and broad bandwidth characteristics. The…

Superconducting resonators used in millimeter-submillimeter astronomy would greatly benefit from deposited dielectrics with a small dielectric loss. We deposited hydrogenated amorphous silicon films using plasma-enhanced chemical vapor…

We present the results of a study of lightly doped amorphous silicon used as a resistive medium for high-radiopurity resistors in nuclear and particle physics research instrumentation. Prototypes are produced for a Time Projection Chamber…

The high intensity and high repetition rate of the European X-ray Free-Electron Laser, presently under construction in Hamburg, requires silicon sensors which can stand X-ray doses of up to 1 GGy for 3 years of operation at high bias…

Low-loss deposited dielectrics will benefit superconducting devices such as integrated superconducting spectrometers, superconducting qubits and kinetic inductance parametric amplifiers. Compared with planar structures, multi-layer…

The research and development of silicon-based X-ray fluorescence detectors achieved its submicron sensitivity. Its initial use is intended for in-situ beam monitoring at advanced light-source facilities. The effectively functioning…