氢化非晶硅柔性器件的质子辐照
仪器与探测器
2024-12-18 v1 应用物理
摘要
利用 3 MeV 质子束对氢化非晶硅 (a-Si:H) 柔性注量与剂量测量器件进行了辐射损伤测试，以评估位移损伤与总电离剂量损伤的综合效应。所测器件具有两种不同的构型和厚度。第一种器件为厚度 2 um、面积 5 mm x 5 mm 的 n-i-p 二极管。第二种器件为厚度 5 um、面积相同的电荷选择性接触探测器。两种器件均沉积在柔性聚酰亚胺衬底上，并在高达 1016 neq/cm2 的注量下进行辐照。在辐照前及在 1016 neq/cm2 注量下辐照后，分别测量了电荷选择性接触器件与 n-i-p 器件对不同质子注量的响应。此外，还研究了在 100{\deg}C 下退火 12 小时以部分恢复性能的效应，并对退火后的器件进行了最终表征。该测试是针对柔性 a-Si:H 器件首次开展的位移损伤与总电离剂量综合测试。
引用
@article{arxiv.2412.13124,
title = {Proton irradiation on Hydrogenated Amorphous Silicon flexible devices},
author = {M. Menichelli and S. Aziz and A. Bashiri and M. Bizzarri and C. Buti and L. Calcagnile and D. Calvo and M. Caprai and D. Caputo and A. P. Caricato and R. Catalano and M. Cazzanelli and R. Cirio and G. A. P. Cirrone and F. Cittadini and T. Croci and G. Cuttone and G. de Cesare and P. De Remigis and S. Dunand and M. Fabi and L. Frontini and C. Grimani and M. Guarrera and H. Hasnaoui and M. Ionica and K. Kanxheri and M. Large and F. Lenta and V. Liberali and N. Lovecchio and M. Martino and G. Maruccio and L. Maruccio and G. Mazza and A. G. Monteduro and A. Morozzi and A. Nascetti and S. Pallotta and A. Papi and D. Passeri and M. Pedio and M. Petasecca and G. Petringa and F. Peverini and P. Placidi and M. Polo and A. Quaranta and G. Quarta and S. Rizzato and F. Sabbatini and L. Servoli and A. Stabile and C. Talamonti and J. E. Thomet and M. S. Vasquez Mora and M. Villani and R. J. Wheadon and N. Wyrsch and N. Zema and L. Tosti},
journal= {arXiv preprint arXiv:2412.13124},
year = {2024}
}
备注
This paper was presented at the IEEE-RTSD2024 in Tampa (USA) with presentation number: R08-04