相关论文: Ballistic PbTe Nanowire Devices

The mobility of p-type nanowires (NWs) of diameters of D=12nm down to D=3nm, in [100], [110], and [111] transport orientations is calculated. An atomistic tight-binding model is used to calculate the NW electronic structure. Linearized…

We analyze the performance of a recently reported Ge/Si core/shell nanowire transistor using a semiclassical, ballistic transport model and an sp3s*d5 tight-binding treatment of the electronic structure. Comparison of the measured…

Conductance measurements of carbon nanotubes containing gated local depletion regions exhibit plateaus as a function of gate voltage, spaced by approximately e2/h, the quantum of conductance for a single (non-degenerate) mode. Plateau…

The tunable properties of molecular materials place them among the favorites for a variety of future generation devices. In addition, to maintain the current trend of miniaturization of those devices, a departure from the present top-down…

Nanoelectronics requires the development of a priori technology evaluation for materials and device design that takes into account quantum physical effects and the explicit chemical nature at the atomic scale. Here, we present a…

Robust zero bias transport anomalies in semiconducting nanowires with proximity-induced superconductivity have been convincingly demonstrated in various experiments. While these are compatible with the existence of Majorana zero modes at…

We report the growth of InAs$_{1-x}$Sb$_{x}$ nanowires ($0\leq x \leq 0.15$) grown by catalyst-free molecular beam epitaxy on silicon (111) substrates. We observed a sharp decrease of stacking fault density in the InAs$_{1-x}$Sb$_{x}$…

The hybrid system of a conventional superconductor (SC) on a semiconductor (SM) nanowire with strong spin-orbit coupling (SOC) represents a promising platform for achieving topological superconductivity and Majorana zero modes (MZMs)…

Semiconductor-superconductor hybrid devices have been proposed as promising platforms for detecting and analyzing Majorana zero modes, which find applications in topological quantum computing. In this work, we solve the Kohn-Sham Density…

Engineering materials to include nanoscale porosity or other nanoscale structures has become a well-established strategy for enhancing the thermoelectric performance of dielectrics. However, the approach is only considered beneficial for…

In ferromagnetic nanostructures, the ballistic anisotropic magnetoresistance (BAMR) is a change in the ballistic conductance with the direction of magnetization due to spin-orbit interaction. Very recently, a directional dependent ballistic…

We study hysteretic magnetoresistance in InSb nanowires due to stray magnetic fields from CoFe micromagnets. Devices without any ferromagnetic components show that the magnetoresistance of InSb nanowires commonly exhibits either a local…

Many phenomena in condensed matter are thought to result from competition between different ordered phases. Palladium is a paramagnetic metal close to both ferromagnetism and superconductivity, and is therefore a potentially interesting…

We study the low-temperature electron mobility of InSb nanowires. We extract the mobility at 4.2 Kelvin by means of field effect transport measurements using a model consisting of a nanowire-transistor with contact resistances. This model…

We experimentally investigate the charge induction mechanism across gated, narrow, ballistic graphene devices with different degrees of edge disorder. By using magnetoconductance measurements as the probing technique, we demonstrate that…

We report on several low temperature experiments supporting the presence of Majorana fermions in superconducting lead nanowires fabricated with a scanning tunneling microscope. These nanowires are the connecting bridges between the STM tip…

We study electron transport properties of a monoatomic graphite layer (graphene) with different types of disorder at half filling. We show that the transport properties of the system depend strongly on the symmetry of disorder. We find that…

Ability to understand and model the performance limits of nanowire transistors is the key to design of next generation devices. Here, we report studies on high-mobility junction-less gate-all-around nanowire field effect transistor with…

Two-dimensional second-order topological superconductors (SOTSCs) have gapped bulk and edge states, with zero-energy Majorana bound states localized at corners. Motivated by recent advances in Majorana nanowire experiments, we propose to…

Majorana Bound States (MBS) have emerged as promising candidates for robust quantum computing due to their non-Abelian statistics and topological protection. In this study, we focus on the dynamical transport of MBS in the…