相关论文: FDSOI Process Based MIV-transistor Utilization for…

Metal inter-layer via (MIV) in Monolithic three-dimensional integrated circuits (M3D-IC) is used to connect inter-layer devices and provide power and clock signals across multiple layers. The size of MIV is comparable to logic gates because…

Monolithic 3D integration has become a promising solution for future computing needs. The metal inter-layer via (MIV) forms interconnects between substrate layers in Monolithic 3D integration. Despite small size of MIV, the area overhead…

Monolithic 3D (M3D) technology enables high density integration, performance, and energy-efficiency by sequentially stacking tiers on top of each other. M3D-based network-on-chip (NoC) architectures can exploit these benefits by adopting…

The semiconductor industry's rapid advancement pushes conventional two-dimensional technology to its utmost limitations in terms of scaling, performance, and cost factors. These challenges drive the usage of 3D technology in the production…

As the demand for high-speed and low-power electronics continues to grow, the quasi-delay-insensitive (QDI) asynchronous domain of digital design has emerged as a promising alternative to traditional clock-based designs. However, the…

Heterogeneous manycore architectures are the key to efficiently execute compute- and data-intensive applications. Through silicon via (TSV)-based 3D manycore system is a promising solution in this direction as it enables integration of…

To continue scaling beyond 2-D CMOS with 3-D integration, any new 3-D IC technology has to be comparable or better than 2-D CMOS in terms of scalability, enhanced functionality, density, power, performance, cost, and reliability.…

3D-Integration is a promising technology towards higher interconnect densities and shorter wiring lengths between multiple chip stacks, thus achieving a very high performance level combined with low power consumption. This technology also…

Over the years, the DRAM latency has not scaled proportionally with its density due to the cost-centric mindset of the DRAM industry. Prior work has shown that this shortcoming can be overcome by reducing the critical length of DRAM access…

The demand for the three-dimensional (3D) integration of electronic components is on a steady rise. The through-silicon-via (TSV) technique emerges as the only viable method for integrating single-crystalline device components in a 3D…

In this work, we proposed a new 3D integration technology: the Flip 3D integration (F3D), consisting of the 3D transistor stacking, the 3D dual-sided interconnects, the 3D die-to-die stacking and the dual-sided Monolithic 3D (M3D). Based on…

Conventional 2D CMOS technology is reaching fundamental scaling limits, and interconnect bottleneck is dominating integrated circuit (IC) power and performance. While 3D IC technologies using Through Silicon Via or Monolithic Inter-layer…

3-D integrated circuits (3-D ICs) offer performance advantages due to their increased bandwidth and reduced wire-length enabled by through-silicon-via structures (TSVs). Traditionally TSVs have been considered to improve the thermal…

For beyond 2-D CMOS logic, various 3-D integration approaches specially transistor based 3-D integrations such as monolithic 3-D [1], Skybridge [2], SN3D [3] holds most promise. However, such 3D architectures within small form factor…

Fast combinational multipliers with large bit widths can occupy significant silicon area, which also drives up power consumption. Area can be reduced through resource sharing (i.e., folding) at the expense of lower throughput, which is…

Storage and transport of six degrees of freedom (6DoF) dynamic volumetric visual content for immersive applications requires efficient compression. ISO/IEC MPEG has recently been working on a standard that aims to efficiently code and…

This work introduces the design analysis simulation and a standard MEMS fabrication process for a three dimensional microcoil with a magnetic core and a digital switch configuration using a completely integrated fully MEMS compatible…

While photonic integrated circuits (PICs) are being widely used in applications such as telecommunications and datacenter interconnects, PICs capable of replacing bulk optics and fibers in high-precision, highly-coherent applications will…

Stacked intelligent metasurfaces (SIMs), which integrate multiple programmable metasurface layers, have recently emerged as a promising technology for advanced wave-domain signal processing. SIMs benefit from flexible spatial…

We present the results of the characterization of pixel modules composed of 75 um thick n-in-p sensors and ATLAS FE-I3 chips, interconnected with the SLID (Solid Liquid Inter-Diffusion) technology. This technique, developed at…