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相关论文: Tuning the thermal conductivity of silicon nanowir…

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The thermal conductivity of silicon nanowires (SiNWs) is investigated by molecular dynamics (MD) simulation. It is found that the thermal conductivity of SiNWs can be reduced exponentially by isotopic defects at room temperature. The…

材料科学 · 物理学 2015-05-13 Nuo Yang , Gang Zhang , Baowen Li

By using molecular dynamics simulations, we study thermal conductivity of silicon nanowires (SiNWs) with different cross sectional geometries. It is found that thermal conductivity decreases monotonically with the increase of…

介观与纳米尺度物理 · 物理学 2015-06-03 Jie Chen , Gang Zhang , Baowen Li

We calculate the resistance and mean free path in long metallic and semiconducting silicon nanowires (SiNWs) using two different numerical approaches: A real space Kubo method and a recursive Green's function method. We compare the two…

介观与纳米尺度物理 · 物理学 2009-11-11 Troels Markussen , Riccardo Rurali , Mads Brandbyge , Antti-Pekka Jauho

The ultralow thermal conductivity $\kappa$ observed experimentally in intentionally roughened silicon nanowires (SiNWs) is reproduced in phonon Monte Carlo simulations with exponentially correlated real-space rough surfaces similar to…

介观与纳米尺度物理 · 物理学 2015-06-09 L. N. Maurer , Z. Aksamija , E. B. Ramayya , A. H. Davoody , I. Knezevic

Porous nanowires (NWs) with tunable thermal conductance are examined as a candidate for thermoelectric (TE) devices with high efficiency (ZT). Thermal conductance of porous Si and Ge NWs is calculated using the complete phonon dispersion…

介观与纳米尺度物理 · 物理学 2015-05-20 Abhijeet Paul , Gerhard Klimeck

We propose to reduce the thermal conductivity of silicon nanowires (SiNWs) by introducing small hole at the centre, i.e. construct silicon nanotube (SiNT) structures. Our numerical results demonstrate that a very small hole (only 1%…

材料科学 · 物理学 2015-05-20 Jie Chen , Gang Zhang , Baowen Li

We measure the thermal conductivity ($\kappa$) of individual InAs nanowires (NWs), and find that it is 3 orders of magnitude smaller than the bulk value in the temperature range of 10 to 50 K. We argue that the low $\kappa$ arises from the…

By means of first-principles density functional theory calculations, we find that hydrogen-passivated ultrathin silicon nanowires (SiNWs) along [100] direction with symmetrical multiple surface dangling bonds (SDBs) and boron doping can…

材料科学 · 物理学 2009-09-09 Zhuo Xu , Qing-Bo Yan , Qing-Rong Zheng , Gang Su

Enhancement of thermal conductivity via surface electromagnetic waves (SEWs) supported in nanostructures has recently drawn attention as a remedy for issues raised due to the reduction of thermal conductivity in nanoscale confinement. Among…

应用物理 · 物理学 2019-10-03 Mikyung Lim , Jose Ordonez-Miranda , Seung S. Lee , Bong Jae Lee , Sebastian Volz

Based on atomistic calculations of electron and phonon transport, we propose to use surface decorated Silicon nanowires (SiNWs) for thermoelectric applications. Two examples of surface decorations are studied to illustrate the underlying…

介观与纳米尺度物理 · 物理学 2009-07-14 Troels Markussen , Antti-Pekka Jauho , Mads Brandbyge

The effect of geometrical confinement, atomic position and orientation of Silicon nanowires (SiNWs) on their thermal properties are investigated using the phonon dispersion obtained using a Modified Valence Force Field (MVFF) model. The…

介观与纳米尺度物理 · 物理学 2015-05-30 Abhijeet Paul , Mathieu Luisier , Gerhard Klimeck

By explicitly considering surface roughness at the atomic level, we quantitatively show that the thermal conductivity of Si nanowires can be lower than Casimir's classical limit. However, this violation only occurs for deep surface…

介观与纳米尺度物理 · 物理学 2015-05-27 Jesús Carrete , Luis Javier Gallego , Luis Miguel Varela , Natalio Mingo

We present a novel approach for computing the surface roughness-limited thermal conductivity of silicon nanowires with diameter D < 100 nm. A frequency-dependent phonon scattering rate is computed from perturbation theory and related to a…

其他凝聚态物理 · 物理学 2009-11-13 Pierre Martin , Zlatan Aksamija , Eric Pop , Umberto Ravaioli

By using first-principles tight-binding electronic structure calculation and Boltzmann transport equation, we investigate the size dependence of thermoelectric properties of silicon nanowires (SiNWs). With cross section area increasing, the…

材料科学 · 物理学 2015-05-13 Lihong Shi , Donglai Yao , Gang Zhang , Baowen Li

The native oxide at the surface of III-V nanowires, such as InAs, can be a major source of charge noise and scattering in nanowire-based electronics, particularly for quantum devices operated at low temperatures. Surface passivation…

介观与纳米尺度物理 · 物理学 2016-11-23 Gregory W. Holloway , Chris M. Haapamaki , Paul Kuyanov , Ray R. LaPierre , Jonathan Baugh

Nanowires have unique optical properties [1-4] and are considered as important building blocks for energy harvesting applications such as solar cells. [2, 5-8] However, due to their large surface-to-volume ratios, the recombination of…

介观与纳米尺度物理 · 物理学 2011-05-26 Yaping Dan , Kwanyong Seo , Kuniharu Takei , Jhim H. Meza , Ali Javey , Kenneth B. Crozier

Low dimensional systems, nanowires, in particular, have exhibited excellent optical and electronic properties. Understanding the thermal properties in semiconductor nanowires is very important for their applications in their electronic…

Cooling electronic devices to cryogenic temperatures (< 77 K) is crucial in various scientific and engineering domains. Efficient cooling involves the removal of heat generated from these devices through thermal contact with either a liquid…

仪器与探测器 · 物理学 2023-09-26 Babak Mohammadian , Mark A. McCulloch , Thomas Sweetnam , Valerio Gilles , Lucio Piccirillo

We compute both electron- and phonon transmissions in thin disordered silicon nanowires. Our atomistic approach is based on tight-binding and empirical potential descriptions of the electronic and phononic systems, respectively. Surface…

介观与纳米尺度物理 · 物理学 2009-11-13 Troels Markussen , Antti-Pekka Jauho , Mads Brandbyge

Using Time Independent Density Functional Theory (TIDFT) it is shown that the 2nd order optical susceptibilities of narrow (1nm-2nm) Silicon Nanowires (SiNW) are enhanced due to surface termination. The value of $\chi^{(2)}$ is enhanced up…

介观与纳米尺度物理 · 物理学 2017-07-27 Daryoush Shiri
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