相关论文: FeFET-based MirrorBit cell for High-density NVM st…
We propose a design for the magnetic memory cell which allows an efficient storage, recording, and readout of information on the basis of thin film ferromagnetic nanorings. The information bit is represented by the polarity of a stable…
As conventional silicon technology is approaching its fundamental material and physical limits with continuous scaling, there is a growing push to look for new platform to design memory circuits for nanoelectronic applications. In this…
Frequency multipliers, a class of essential electronic components, play a pivotal role in contemporary signal processing and communication systems. They serve as crucial building blocks for generating high-frequency signals by multiplying…
Federated learning (FL) with fully homomorphic encryption (FHE) effectively safeguards data privacy during model aggregation by encrypting local model updates before transmission, mitigating threats from untrusted servers or eavesdroppers…
Integrated optoelectronic systems strive to combine the logic/memory density of electronics with the bandwidth of photonics, but monolithic realization is impeded by the inefficient electronic-to-photonic interface. Current architectures…
The nonuniform fast Fourier transform (NUFFT) generalizes the FFT to off-grid data. Its many applications include image reconstruction, data analysis, and the numerical solution of differential equations. We present FINUFFT, an efficient…
Nanophotonic supercontinuum generation offers a practical route to chip-based f-2f interferometry by leveraging coexisting chi(2) and chi(3) nonlinearities. In conventional uniform waveguides, the phase-matching bandwidth for…
Wurtzite nitride ferroelectric materials have emerged as promising candidates for next-generation memory applications due to their exceptional polarization properties and compatibility with conventional semiconductor processing techniques.…
Memory cells are an important building block of digital electronics. We combine here the unique electronic properties of semiconducting monolayer MoS2 with the high conductivity of graphene to build a 2D heterostructure capable of…
An array of DEPFET pixels is one of several concepts to implement an active pixel sensor. Similar to PNCCD and SDD detectors, the typically 0.45 mm thick silicon sensor is fully depleted by the principle of sideward depletion. They have…
Phase change memories (PCM) is an emerging type of non-volatile memory that has shown a strong presence in the data-storage market. This technology has recently attracted significant research interest in the development of non-Von Neumann…
Semiconductor double quantum dot hybrid qubits are promising candidates for high-fidelity quantum computing. However, their performance is limited by charge noise, which is ubiquitous in solid-state devices, and phonon-induced dephasing.…
Ferroelectric field effect transistor (FeFET) memory has shown the potential to meet the requirements of the growing need for fast, dense, low-power, and non-volatile memories. In this paper, we propose a memory architecture named…
Single-port ferroelectric FET (FeFET) that performs write and read operations on the same electrical gate prevents its wide application in tunable analog electronics and suffers from read disturb, especially to the high-threshold voltage…
Hybrid memory systems, comprised of emerging non-volatile memory (NVM) and DRAM, have been proposed to address the growing memory demand of applications. Emerging NVM technologies, such as phase-change memories (PCM), memristor, and 3D…
Various near-term quantum networking applications will benefit from low-loss, fiber-coupled photonic quantum memory devices with high efficiencies. We demonstrate a fiber-coupled loop-and-switch quantum memory platform with a pass-through…
This paper investigates and compares through a comprehensive TCAD analysis 2D and 3D simulations for ferroelectric based FETs. We provide clear evidence that the multiple read conductance values experimentally observed in FeFETs stem from…
Binary oxide ferroelectrics like doped HfO2, compatible with complementary metal-oxide-semiconductor (CMOS) platforms, have gained significant interest for energy efficient, scalable, high-performance non-volatile memory and neuromorphic…
The current work proposes a novel scheme for developing a light-activated non-filamentary memristor device by fabricating an Au-nanoparticle embedded HfO$_2$-bilayer/p-Si MOS structure. Under illumination, the electrons in such embedded…
Led by the rise of the internet of things, the world is experiencing exponential growth of generated data. Data-driven algorithms such as signal processing and artificial neural networks are required to process and extract meaningful…