相关论文: FeFET-based MirrorBit cell for High-density NVM st…

Molecule-based devices are envisioned to complement silicon devices by providing new functions or already existing functions at a simpler process level and at a lower cost by virtue of their self-organization capabilities. Moreover, they…

In our earlier work [Appl. Phys. Lett. 92, 022509 (2008)], we proposed nonvolatile vortex random access memory (VRAM) based on the energetically stable twofold ground state of vortex-core magnetizations as information carrier. Here we…

We propose and theoretically analyze a novel metal-oxide-semiconductor field-effect-transistor (MOSFET) type of spin transistor (hereafter referred to as a spin MOSFET) consisting of a MOS gate structure and half-metallic-ferromagnet (HMF)…

RRAM-based in-Memory Computing is an exciting road for implementing highly energy efficient neural networks. This vision is however challenged by RRAM variability, as the efficient implementation of in-memory computing does not allow error…

Hyperdimensional Computing (HDC) is an emerging computational framework that mimics important brain functions by operating over high-dimensional vectors, called hypervectors (HVs). In-memory computing implementations of HDC are desirable…

Due to traits of CMOS compatibility and scalability, HfO2-based ferroelectrics are promising candidates for next-generation memory devices. However, their commercialization has been greatly hindered by reliability issues, with fatigue being…

While nanoscale electronic logic circuits are well-established, the development of na-noscale thermal logic circuits has been slow, mainly due to the absence of efficient and controllable nonvolatile field-effect thermal transistors. In…

A vertical partial gate carbon nanotube (CNT) field-effect transistor (FET), which is amenable to the vertical CNT growth process and offers the potential for a parallel CNT array channel, is simulated using a self-consistent atomistic…

Magnetic random access memory schemes employing magnetoelectric coupling to write binary information promise outstanding energy efficiency. We propose and demonstrate a purely antiferromagnetic magnetoelectric random access memory…

Germanium spin qubits exhibit strong spin-orbit interaction, which allow for high-fidelity qubit control, but also provide a strong dependence on the magnetic field. Superconducting vector magnets are often used to minimize dephasing due to…

Reliability issues stemming from device level non-idealities of non-volatile emerging technologies like ferroelectric field-effect transistors (FeFET), especially at scaled dimensions, cause substantial degradation in the accuracy of…

In this work, a compact model is presented for a 14 nm CMOS-based FinFET Resonant Body Transistor (fRBT) operating at a frequency of 11.8 GHz and targeting RF frequency generation/filtering for next generation radio communication, clocking,…

Quantum algorithms offer a dramatic speedup for computational problems in machine learning, material science, and chemistry. However, any near-term realizations of these algorithms will need to be heavily optimized to fit within the finite…

Rapid advancements in artificial intelligence have given rise to transformative models, profoundly impacting our lives. These models demand massive volumes of data to operate effectively, exacerbating the data-transfer bottleneck inherent…

Excellent gate electrostatics in field effect transistors (FETs) based on two-dimensional transition metal dichalcogenide (2D TMD) channels can dramatically decrease static power dissipation. Energy efficient FETs operate in enhancement…

Ferroelectric-based capacitive crossbar arrays have been proposed for energy-efficient in-memory computing in the charge domain. They combat the challenges like sneak paths and high static power faced by resistive crossbar arrays but are…

We report optically as well as electronically controlled, bio-electronic field-effect transistor (FET) based on the hybrid film of a photo-active purple membrane and electronically conducting single-walled carbon nanotubes (SWNTs). Two…

Charge qubits formed in double quantum dots represent quintessential two-level systems that enjoy both ease of control and efficient readout. Unfortunately, charge noise can cause rapid decoherence, with typical single-qubit gate fidelities…

In this paper we extend our investigations on noise-assisted storage devices through the experimental study of a loop composed of a single Schmitt trigger and an element that introduces a finite delay. We show that such a system allows the…

Thin film ferroelectric devices with ultralow power operation, non-volatile data retention and fast and reliable switching are attractive for non-volatile memory and as synaptic weight elements. However, low thermal budget ferroelectric…