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A recent experiment reported a large anomalous Hall effect in Magic Angle Twisted Bilayer Graphene (TBG) aligned with a hexagonal boron nitride(h-BN) substrate at $\frac{3}{4}$ filling of the conduction band. In this paper we study this…

强关联电子 · 物理学 2019-12-04 Ya-Hui Zhang , Dan Mao , T. Senthil

The third-order nonlinear Hall effect induced by Berry-connection polarizability tensor has been observed in Weyl semimetals T$_d$-MoTe$_2$ as well as T$_d$-TaIrTe$_4$. The experiments were performed on bulk samples, and the results were…

介观与纳米尺度物理 · 物理学 2022-07-26 Miaomiao Wei , Longjun Xiang , Luyang Wang , Fuming Xu , Jian Wang

Strong magnetic fields profoundly affect the quantum physics of charged particles, as seen for example by the integer and fractionally quantized Hall effects, and the fractal `Hofstadter butterfly' spectrum of electrons in the presence of a…

介观与纳米尺度物理 · 物理学 2023-12-19 Jie Wang , Jiawei Zang , Jennifer Cano , Andrew J. Millis

Electron correlation and topology are two central threads of modern condensed matter physics. Semiconductor moir\'e materials provide a highly tunable platform for studies of electron correlation. Correlation-driven phenomena, including the…

Magic-angle twisted bilayer graphene (tBLG) has been studied extensively owing to its wealth of symmetry-broken phases, correlated Chern insulators, orbital magnetism, and superconductivity. In particular, the anomalous Hall effect (AHE)…

介观与纳米尺度物理 · 物理学 2022-12-13 Chun-Chih Tseng , Xuetao Ma , Zhaoyu Liu , Kenji Watanabe , Takashi Taniguchi , Jiun-Haw Chu , Matthew Yankowitz

For over a century, the Hall effect, a transverse effect under out-of-plane magnetic field or magnetization, has been a cornerstone for magnetotransport studies and applications. Modern theoretical formulation based on the Berry curvature…

介观与纳米尺度物理 · 物理学 2024-12-05 Ayano Nakamura , Shinichi Nishihaya , Hiroaki Ishizuka , Markus Kriener , Yuto Watanabe , Masaki Uchida

We studied the nonlinear electric response in WTe2 and MoTe2 monolayers. When the inversion symmetry is breaking but the the time-reversal symmetry is preserved, a second-order Hall effect called the nonlinear anomalous Hall effect (NLAHE)…

材料科学 · 物理学 2018-10-10 Yang Zhang , Jeroen van den Brink , Claudia Felser , Binghai Yan

The layer Hall effect describes electrons spontaneously deflected to opposite sides at different layers, which has been experimentally reported in the MnBi$_2$Te$_4$ thinfilms under perpendicular electric fields [Gao et al., Nature 595, 521…

介观与纳米尺度物理 · 物理学 2022-08-23 Rui Chen , Hai-Peng Sun , Mingqiang Gu , Chun-Bo Hua , Qihang Liu , Hai-Zhou Lu , X. C. Xie

A new nonlinear scheme of high harmonics generation in a wide class of time-reversal invariant materials with broken spatial inversion symmetry (where recently the nonlinear Hall effect has been established) due to the nontrivial topology…

介观与纳米尺度物理 · 物理学 2021-01-04 H. K. Avetissian , G. F. Mkrtchian

The recent constructions of flat moir\'e minibands in specifically twisted multilayer graphene and twisted transition metal dichalcogenides (TMDs) have facilitated the observation of strong correlations with a convenient tunability. These…

介观与纳米尺度物理 · 物理学 2024-04-05 Jihang Zhu , Dawei Zhai , Cong Xiao , Wang Yao

Monolayer graphene placed with a twist on top of AB-stacked bilayer graphene hosts topological flat bands in a wide range of twist angles. The dispersion of these bands and gaps between them can be efficiently controlled by a perpendicular…

强关联电子 · 物理学 2020-08-05 Louk Rademaker , Ivan Protopopov , Dmitry Abanin

When nanometric, noncoplanar spin textures with scalar spin chirality (SSC) are coupled to itinerant electrons, they endow the quasiparticle wavefunctions with a gauge field, termed Berry curvature, in a way that bears analogy to…

Focusing on the twist angle for the minimal commensurate structure, we perform nonperturbative calculations of electron dynamics in the twisted bilayer graphene (TBG) under intense laser fields. We show that the TBG exhibits enriched…

强关联电子 · 物理学 2020-07-22 Tatsuhiko N. Ikeda

Layered two-dimensional (2D) materials exhibit unique properties, expanding opportunities in material design. We investigate MX$_2$ transition metal dichalcogenides (TMDCs) (M = Mo, W; X = S, Se, Te) in homo- and heterobilayers with…

材料科学 · 物理学 2025-03-13 Yu-Hsiu Lin , William P. Comaskey , Jose L. Mendoza-Cortes

Quantum geometry of electronic wavefunctions results in fascinating topological phenomena. A prominent example is the intrinsic anomalous Hall effect (AHE) in which a Hall voltage arises in the absence of an applied magnetic field. The AHE…

Remarkable recent experiments have observed fractional quantum anomalous Hall (FQAH) effects at zero field and unusually high temperatures in twisted semiconductor bilayer $t$MoTe$_2$. Intriguing observations in these experiments such as…

介观与纳米尺度物理 · 物理学 2024-04-03 Ahmed Abouelkomsan , Aidan P. Reddy , Liang Fu , Emil J. Bergholtz

Equilibrium interlayer exciton condensation is common in bilayer quantum Hall systems and is characterized by spontaneous phase coherence between isolated layers. It has been predicted that similar physics can occur in the absence of a…

介观与纳米尺度物理 · 物理学 2025-09-16 Yongxin Zeng , Allan H. MacDonald , Nemin Wei

We examine the quantum Hall effect in bilayer graphene grown on Cu substrates by chemical vapor deposition. Spatially resolved Raman spectroscopy suggests a mixture of Bernal (A-B) stacked and rotationally faulted (twisted) domains.…

介观与纳米尺度物理 · 物理学 2012-05-21 Babak Fallahazad , Yufeng Hao , Kayoung Lee , Seyoung Kim , R. S. Ruoff , E. Tutuc

Van der Waals heterostructures obtained by artificially stacking two-dimensional crystals represent the frontier of material engineering, demonstrating properties superior to those of the starting materials. Fine control of the interlayer…

We study the effect of an in-plane magnetic field on the non-interacting dispersion of twisted bilayer graphene. Our analysis is rooted in the chirally symmetric continuum model, whose zero-field band structure hosts exactly flat bands and…

强关联电子 · 物理学 2020-05-20 Yves H. Kwan , S. A. Parameswaran , S. L. Sondhi