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We analyze the quantum Hall effect in single layer graphene with bilayer stripe defects. Such defects are often encountered at steps in the substrate of graphene grown on silicon carbide. We show that AB or AA stacked bilayer stripes result…

介观与纳米尺度物理 · 物理学 2013-05-29 Tomas Lofwander , Pablo San-Jose , Elsa Prada

Spin-orbit coupling in graphene can be enhanced by chemical functionalization, adatom decoration or proximity with a van der Waals material. As it is expected that such enhancement gives rise to a sizeable spin Hall effect, a spin-to-charge…

介观与纳米尺度物理 · 物理学 2020-06-17 C. K. Safeer , Josep Ingla-Aynés , Nerea Ontoso , Franz Herling , Wenjing Yan , Luis E. Hueso , Fèlix Casanova

The characterization and the experimental measurement of the Berry curvature in solids have become an increasingly relevant task in condensed matter physics. We present the theoretical prediction of a gate tunable anomalous Hall effect…

The planar Hall effect (PHE), the appearance of an in-plane transverse voltage in the presence of coplanar electric and magnetic fields, has been ascribed to the chiral anomaly and Berry curvature effects in Weyl semimetals. In the presence…

介观与纳米尺度物理 · 物理学 2023-10-06 L. Medel Onofre , A. Martín-Ruiz

We introduce a novel two-dimensional electronic system with ultrastrong interlayer interactions, namely twisted bilayer graphene with a large twist angle, as an ideal ground for realizing interlayer-coherent excitonic condensates. In these…

介观与纳米尺度物理 · 物理学 2022-12-20 Dohun Kim , Byungmin Kang , Yong-Bin Choi , Kenji Watanabe , Takashi Taniguchi , Gil-Ho Lee , Gil Young Cho , Youngwook Kim

The valley Hall effect arises from valley contrasting Berry curvature and requires inversion symmetry breaking. Here, we propose a nonlinear mechanism to generate a valley Hall current in systems with both inversion and time-reversal…

介观与纳米尺度物理 · 物理学 2025-01-28 Kamal Das , Koushik Ghorai , Dimitrie Culcer , Amit Agarwal

The nonlinear Hall effect (NLHE) is a phenomenon which could produce a transverse Hall voltage in a time-reversal-invariant material. Here, we report the real space characterization of NLHE evaluated through quantum transport in TaIrTe4…

介观与纳米尺度物理 · 物理学 2024-02-29 Sheng Luo , Chuang-Han Hsu , Guoqing Chang , Arun Bansil , Hsin Lin , Gengchiau Liang

We investigate the topological properties of photon-dressed energy bands in bilayer $\alpha-T_{3}$ lattices under off-resonant circularly polarized light, focusing on aligned and cyclic stacking configurations. Analytical expressions for…

介观与纳米尺度物理 · 物理学 2025-11-06 O. Benhaida , E. H. Saidi , L. B. Drissi , R. Ahl Laamara

We show that interlayer charge transfer in 2D materials can be driven by an in-plane electric field, giving rise to electrical multipole generation in linear and second order of in-plane field. The linear and nonlinear effects have quantum…

介观与纳米尺度物理 · 物理学 2024-09-05 Huiyuan Zheng , Dawei Zhai , Cong Xiao , Wang Yao

Proximity effects resulting from depositing a graphene layer on a TMD substrate layer change the dynamics of the electronic states in graphene, inducing spin orbit coupling (SOC) and staggered potential effects. An effective Hamiltonian…

介观与纳米尺度物理 · 物理学 2016-12-21 Abdulrhman M. Alsharari , Mahmoud M. Asmar , Sergio E. Ulloa

Twisted van der Waals (vdW) heterostructures have recently emerged as an attractive platform to study tunable correlated electron systems. However, the quantum mechanical nature of vdW heterostructures makes their theoretical and…

介观与纳米尺度物理 · 物理学 2021-04-28 S. Minhal Gardezi , Harris Pirie , William Dorrell , Jennifer E. Hoffman

Moir\'e materials provide fertile ground for the correlated and topological quantum phenomena. Among them, the quantum anomalous Hall (QAH) effect, in which the Hall resistance is quantized even under zero magnetic field, is a direct…

Bandstructure engineering using alloying is widely utilised for achieving optimised performance in modern semiconductor devices. While alloying has been studied in monolayer transition metal dichalcogenides, its application in van der Waals…

Transition metal dichalcogenide homobilayers unite two frontiers of quantum materials research: sliding ferroelectricity, arising from rhombohedral (R) stacking, and moir\'e quantum matter, emerging from small-angle twisting. The…

Recently, a chirality-driven contribution to the anomalous Hall effect has been found that is induced by the Berry phase and does not directly involve spin-orbit coupling. In this paper, we will investigate this effect numerically in a…

介观与纳米尺度物理 · 物理学 2010-03-16 G. Metalidis , P. Bruno

Realizations of some topological phases in two-dimensional systems rely on the challenge of jointly incorporating spin-orbit and magnetic exchange interactions. Here, we predict the formation and control of a fully valley-polarized quantum…

介观与纳米尺度物理 · 物理学 2021-10-25 Marc Vila , Jose H. Garcia , Stephan Roche

Electrons moving through a noncoplanar magnetic texture acquire a Berry phase, which can be described as an effective magnetic field. This effect is known as the topological Hall effect and has been observed in topological spin textures.…

介观与纳米尺度物理 · 物理学 2022-10-21 Tan Dao , Sergey S. Pershoguba , Jiadong Zang

The Berry curvature dipole induced by symmetry breaking play a pivotal role in electronic transport properties and nonlinear responses, such as the nonlinear Hall effect and circular photogalvanic effect. The study of the Berry curvature…

材料科学 · 物理学 2026-03-05 Wenzhe Zhou , Dehe Zhang , Guibo Zheng , Yinheng Li , Fangping Ouyang

At near-parallel orientation, twisted bilayer of transition metal dichalcogenides exhibit inter-layer charge transfer-driven out-of-plane ferroelectricity that may lead to unique electronic device architectures. Here we report detailed…

Twisted van der Waals heterostructures with flat electronic bands have recently emerged as a platform for realizing correlated and topological states with an extraordinary degree of control and tunability. In graphene-based moir\'e…