中文
相关论文

相关论文: Full control of solid-state electrolytes for elect…

200 篇论文

Ionic liquids provide versatile pathways for controlling the structures and properties of quantum materials. Previous studies have reported electrostatic gating of nanometre-thick flakes leading to emergent superconductivity, insertion or…

材料科学 · 物理学 2023-08-28 Fei Wang , Yang Zhang , Zhijie Wang , Haoxiong Zhang , Xi Wu , Changhua Bao , Jia Li , Pu Yu , Shuyun Zhou

Electrochemical gating has been demonstrated as a powerful tool to tune the physical properties of two-dimensional (2D) materials, leading to lots of fascinating quantum phenomena. However, the reported liquid-nature electrolytes (e.g,…

应用物理 · 物理学 2022-04-27 Xin Hu , Shou-Xin Zhao , Yang Li , Zhao-Yuan Sun , Liang Zhen , Cheng-Yan Xu

Recent experiments have shown the possibility of tuning the transport properties of metallic nanosized superconductors through a gate voltage. These results renewed the longstanding debate on the interaction between electrostatic fields and…

Ionic liquid (IL) gating has emerged as a powerful tool to control the structural, electronic, optical, and magnetic properties of materials by driving ion motion at solid interfaces. In magneto-ionic systems, electric fields are used to…

In order to make a densely packed assembly of undoped semiconductor nanocrystals conductive, it is usually gated by a room temperature ionic liquid. The ionic liquid enters the pores of the super-crystal assembly under the influence of an…

介观与纳米尺度物理 · 物理学 2011-12-15 Tianran Chen , Brian Skinner , B. I. Shklovskii

Dynamic control of conductivity and optical properties via atomic structure changes is of tremendous technological importance in information storage. Energy consumption considerations provide a driving force toward employing thin materials…

材料科学 · 物理学 2016-02-16 Yao Li , Karel-Alexander N. Duerloo , Kerry Wauson , Evan J. Reed

We develop a novel field effect transistor (FET) device using solid ion conductor (SIC) as a gate dielectric, and we can tune the carrier density of FeSe by driving lithium ions in and out of the FeSe thin flakes, and consequently control…

超导电性 · 物理学 2017-03-08 B. Lei , N. Z. Wang , C. Shang , F. B. Meng , L. K. Ma , X. G. Luo , T. Wu , Z. Sun , Y. Wang , Z. Jiang , B. H. Mao , Z. Liu , Y. J. Yu , Y. B. Zhang , X. H. Chen

Electronic logic gates are the basic building blocks of every computing and micro controlling system. Logic gates are made of switches, such as diodes and transistors. Ion-selective, ionic switches may emulate electronic switches [1-8]. If…

化学物理 · 物理学 2017-10-11 Haim Grebel

Organic semiconductors are usually not thought to show outstanding performance in highly-integrated, sub 100 nm transistors. Consequently, single-crystalline materials such as SWCNTs, MoS2 or inorganic semiconductors are the material of…

应用物理 · 物理学 2019-10-02 Jakob Lenz , Fabio del Giudice , Fabian R. Geisenhof , Felix Winterer , R. Thomas Weitz

Exploration of new dielectrics with large capacitive coupling is an essential topic in modern electronics when conventional dielectrics suffer from the leakage issue near breakdown limit. To address this looming challenge, we demonstrate…

Metals are commonly used as electrostatic gates in devices due to their abundant charge carrier densities that are necessary for efficient charging and discharging. A semiconducting gate can be beneficial for certain fabrication processes,…

In the effort to make 2D materials-based devices smaller, faster, and more efficient, it is important to control charge carrier at lengths approaching the nanometer scale. Traditional gating techniques based on capacitive coupling through a…

Electrolyte gating using ionic liquid electrolytes has recently generated considerable interest as a method to achieve large carrier density modulations in a variety of materials. In noble metal thin films, electrolyte gating results in…

材料科学 · 物理学 2016-03-29 Trevor A Petach , Menyoung Lee , Ryan Davis , Apurva Mehta , David Goldhaber-Gordon

Charge transport in MoS2 in the low carrier density regime is dominated by trap states and band edge disorder. The intrinsic transport properties of MoS2 emerge in the high density regime where conduction occurs via extended states. Here,…

介观与纳米尺度物理 · 物理学 2014-12-08 Leiqiang Chu , Hennrik Schmidt , Jiang Pu , Shunfeng Wang , Barbaros Özyilmaz , Taishi Takenobu , Goki Eda

This article presents the implementation of on-chip iontronic circuits via small-scale integration of multiple ionic logic gates made of bi-polar polyelectrolyte diodes. These ionic circuits are analogous to solid-state electronic circuits,…

流体动力学 · 物理学 2022-11-24 Barak Sabbagh , Noa Edri Fraiman , Alex Fish , Gilad Yossifon

Transition metal dichalcogenides exhibit rich phase diagrams dominated by the interplay of superconductivity and charge density waves, which often result in anomalies in the electric transport properties. Here, we employ the ionic gating…

介观与纳米尺度物理 · 物理学 2022-06-28 Erik Piatti , Jessica Montagna Bozzone , Dario Daghero

Electrostatic modification of functional materials by electrolytic gating has demonstrated a remarkably wide range of density modulation, a condition crucial for developing novel electronic phases in systems ranging from complex oxides to…

介观与纳米尺度物理 · 物理学 2023-07-19 Yuan Ren , Hongtao Yuan , Xiaoyu Wu , Zhuoyu Chen , Yoshihiro Iwasa , Yi Cui , Harold Y. Hwang , Keji Lai

We evaluate the degree of disorder in electrolyte gating devices through the transport measurements in graphene. By comparing the mobility in ion- and standard metal-gated devices, we show that the deposition of the ionic liquid introduces…

介观与纳米尺度物理 · 物理学 2016-06-22 Andrew Browning , Norio Kumada , Yoshiaki Sekine , Hiroshi Irie , Koji Muraki , Hideki Yamamoto

Thermoelectric measurements detect the asymmetry between the density of states above and below the chemical potential in a material. It provides insights into small variations in the density of states near the chemical potential,…

材料科学 · 物理学 2020-05-14 Hui Xing , Peihong Zhang , Hao Zeng

Electrostatic confinement in semiconductors provides a flexible platform for the emulation of interacting electrons in a two-dimensional lattice, including in the presence of gauge fields. This combination offers the potential to realize a…

介观与纳米尺度物理 · 物理学 2019-06-04 T. Hensgens , U. Mukhopadhyay , P. Barthelemy , S. Fallahi , G. C. Gardner , C. Reichl , W. Wegscheider , M. J. Manfra , L. M. K. Vandersypen