相关论文: Phonon-assisted optical absorption of SiC polytype…
We measure the temperature dependence of the two-photon absorption and optical Kerr nonlinearity of a silicon waveguide over a range of temperatures from 5.5 to 300 K at a wavelength of 1.55 {\mu}m. The two-photon absorption coefficient is…
Topological insulator films are promising materials for optoelectronics due to a strong optical absorption and a thickness dependent band gap of the topological surface states. They are superior candidates for photodetector applications in…
n this study, we utilize a rigorous ab initio-based finite momentum Bethe-Salpeter equation to investigate the photoluminescence emission in two-dimensional hexagonal tungsten carbide (h-WC). This thermodynamically stable monolayer exhibits…
Integrated photonic platforms have proliferated in recent years, each demonstrating its own unique strengths and shortcomings. However, given the processing incompatibilities of different platforms, a formidable challenge in the field of…
Surface phonon polariton (SPhP) waves are excited at the silicon carbide ($SiC$) surface under irradiation of light close to the lattice resonance frequency. Metal mask at the surface blocks irradiation of certain areas and thus allows…
We experimentally and theoretically study electromagnetic properties of optically thin silicon carbide (SiC) membranes perforated by an array of sub-wavelength holes. Giant absorption and transmission is found using Fourier Transformed…
Two-dimensional Dirac semimetals have attracted much attention because of their linear energy dispersion and non-trivial Berry phase. Graphene-like 2D Dirac materials are gapless only within certain approximations, e.g., if spin-orbit…
Silicon p-n junction diodes emit low-intensity, broad-spectrum light near 1120 nm in forward bias and between 400-900 nm in reverse bias (avalanche). For the first time, we experimentally achieve optical absorption sensing of pigment in…
The effect of the presence of electron-phonon (e-ph) coupling in the SiC, GeC and SnC hybrids is studied in the framework of the ab initio perturbation theory. The electronic bang gap thermal dependence reveals a normal monotonic decrease…
Amorphous silicon carbide (a-SiC) has emerged as a compelling candidate for applications in integrated photonics, known for its high refractive index, high optical quality, high thermo-optic coefficient, and strong third-order…
We present a new paradigm for understanding optical absorption and hot electron dynamics experiments in graphene. Our analysis pivots on assigning proper importance to phonon assisted indirect processes and bleaching of direct processes. We…
Material absorption is a key limitation in nanophotonic systems; however, its characterization is often obscured by scattering and diffraction loss. Here we show that nanomechanical frequency spectroscopy can be used to characterize the…
Temperature influences the performance of two-dimensional materials in optoelectronic devices. Indeed, the optical characterization of these materials is usually realized at room temperature. Nevertheless most {\it ab-initio} studies are…
The high thermal conductivity of boron arsenide (BAs) makes it a promising material for optoelectronic applications in which thermal management is central. In this work, we study the finite temperature optoelectronic properties of BAs by…
Silicon direct bonding offers flexibility in the design and development of Si optics by allowing manufacturers to combine subcomponents with a potentially lossless and mechanically stable interface. The bonding process presents challenges…
We present an experimental comparison of photoacoustic responsivities of common highly absorbing carbon-based materials. The comparison was carried out with parameters relevant for photoacoustic power detectors and Fourier-transform…
The discovery of superconductivity at 203K in SH$_3$ is an important step toward higher values of $T_c$. Predictions based on state-of-the-art DFT for the electronic structure, including one preceding experimental confirmation, showed the…
We present a route to near-perfect absorption in compact photonic-crystal (PC) structures constructed from strongly absorbing media that are typically highly reflective in bulk form. Our analysis suggests that the key underlying mechanism…
Wide-bandgap (WBG) semiconductors have promising applications in power electronics due to their high voltages, radio frequencies, and tolerant temperatures. Among all the WBG semiconductors, SiC has attracted attention because of its high…
Silicon carbide is a very promising platform for quantum applications because of extraordinary spin and optical properties of point defects in this technologically-friendly material. These properties are strongly influenced by crystal…