相关论文: Optical Switching in Tb/Co-Multilayer Based Nanosc…

Switching of magnetic tunnel junction using femto-second laser enables a possible path for THz frequency memory operation, which means writing speeds 2 orders of magnitude faster than alternative electrical approaches based on spin transfer…

Control of magnetism without using magnetic fields enables large-scale integration of spintronic devices for memory, computation and communication in the beyond-CMOS era. Mechanisms including spin torque transfer, spin Hall effect, and…

We demonstrate single shot al optical switching (AOS) in rare earth free CoFeB/MgO magnetic tunnel junctions (MTJs), a material system widely adopted in spin transfer torque magnetic random access memory (STT MRAM). By tuning the capping…

Optical interconnect has emerged as the front-runner to replace electrical interconnect especially for off-chip communication. However, a major drawback with optical interconnects is the need for photodetectors and amplifiers at the…

Single pulse All Optical Helicity-Independent Switching is demonstrated in an in-plane magnetized magnetic tunnel junction. A toggle switching of the 2nm thick Co40Fe40B20 soft layer could be achieved by exchange coupling the Co40Fe40B20…

Light pulses offer a faster, more energy-efficient, and direct route to magnetic bit writing, pointing toward a hybrid memory and computing paradigm based on photon transmission and spin retention. Yet progress remains hindered, as…

The role of universal memory can be successfully satisfied by magnetic tunnel junctions (MTJs) where the writing mechanism is based on spin-transfer torque (STT). An improvement in the switching properties (lower switching current density…

Electric-field control of spin states offers a promising route to ultra-low-power, ultra-fast magnetization switching in spintronic devices such as magnetic tunnel junctions (MTJs). Recent progress in modulating spin-orbit interactions at…

Spin-transfer magnetic random access memory is of significant interest for cryogenic applications where a persistent, fast, low-energy consumption and high device density is needed. Here we report the low-temperature nanosecond duration…

Since the first experimental observation of all-optical switching phenomena, intensive research has been focused on finding suitable magnetic systems that can be integrated as storage elements within spintronic devices and whose…

Perpendicular magnetic tunnel junctions are one of the building blocks for spintronic memories, which allow fast nonvolatile data access, offering substantial potentials to revolutionize the mainstream computing architecture. However,…

The writing energy for reversing the magnetization of the free layer in a magnetic tunnel junction (MTJ) is a key figure of merit for comparing the performances of magnetic random access memories with competing technologies. Magnetization…

Ultra-fast magnetization switching triggered by a single femtosecond laser pulse has gained significant attention over the last decade for its potential in low-power consumption, high-speed memory applications. However, this phenomenon has…

Perpendicular MgO-based Magnetic Tunnel Junctions are optimal candidates as building block of Spin Transfer Torque (STT) magnetoresistive memories. However, up to now, the only STT is not enough to achieve switching current density below…

The straintronic magnetic tunnel junction (s-MTJ) is an MTJ whose resistance state can be changed continuously or gradually from high to low with a gate voltage that generates strain the magnetostrictive soft layer. This unusual feature,…

We investigate fast-pulse switching of in-plane-magnetized magnetic tunnel junctions (MTJs) within 3-terminal devices in which spin-transfer torque is applied to the MTJ by the giant spin Hall effect. We measure reliable switching, with…

Future applications of spin-orbit torque will require new mechanisms to improve the efficiency for switching nanoscale magnetic tunnel junctions (MTJs), while also controlling the magnetic dynamics to achieve fast, nanosecond scale…

Current-induced spin-transfer torques (STT) and spin-orbit torques (SOT) enable the electrical switching of magnetic tunnel junctions (MTJs) in nonvolatile magnetic random access memories. In order to develop faster memory devices, an…

Switching magnetization in a perpendicular magnetic tunnel junction (pMTJ) via voltage controlled magnetic anisotropy (VCMA) has shown the potential to markedly reduce the switching energy. However, the requirement of an external magnetic…

Power consumption is the main limitation in the development of new high performance random access memory for portable electronic devices. Magnetic RAM (MRAM) with CoFeB/MgO based magnetic tunnel junctions (MTJs) is a promising candidate for…