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We model electrical conductivity in metastable amorphous $Ge_{2}Sb_{2}Te_{5}$ using independent contributions from temperature and electric field to simulate phase change memory devices and Ovonic threshold switches. 3D, 2D-rotational, and…

Phase change memory (PCM) is an emerging data storage technology, however its programming is thermal in nature and typically not energy-efficient. Here we reduce the switching power of PCM through the combined approaches of filamentary…

Quantum-accurate computer simulations play a central role in understanding phase-change materials (PCMs) for advanced memory technologies. However, direct quantum-mechanical simulations are necessarily limited to simplified models,…

The Ovonic Phase Change Memory is critical in the quest to meet the increasing commercial needs for new information systems. The important paper of DerChang Kau et al. [1], describing a stackable cross point phase change memory, resulting…

Crossbar array architecture is an essential design element for densely connected Non-Volatile Memory(NVM) applications. To overcome intrinsic sneak current problem of crossbar arrays, each memory unit is serially attached to a selector unit…

Phase change memory (PCM) is an emerging high speed, high density, high endurance, and scalable non-volatile memory technology which utilizes the large resistivity contrast between the amorphous and crystalline phases of chalcogenide…

One of the most widely used active materials for phase-change memories (PCM), the ternary stoichiometric compound Ge$_2$Sb$_2$Te$_5$ (GST), has a low crystallization temperature of around 150$^\circ$C. One solution to achieve higher…

Reconfigurable or programmable photonic devices are rapidly growing and have become an integral part of many optical systems. The ability to selectively modulate electromagnetic waves through electrical stimuli is crucial in the advancement…

Ovonic threshold switching is the key process for several applications of chalcogenide alloys including phase change memories and selector elements in cross-points arrays. Very recently, it has been shown that the threshold switching…

Phase change memory (PCM) is a rapidly growing technology that not only offers advancements in storage-class memories but also enables in-memory data storage and processing towards overcoming the von Neumann bottleneck. In PCMs, the primary…

Phase interfaces in melting and solidification processes are strongly affected by the presence of convection in the liquid. One way of modeling their transient evolution is to couple an incompressible flow model to an energy balance in…

Phase Change Memory (PCM) is an attractive candidate for main memory as it offers non-volatility and zero leakage power, while providing higher cell densities, longer data retention time, and higher capacity scaling compared to DRAM. In…

Interest in Restricted Boltzmann Machine (RBM) is growing as a generative stochastic artificial neural network to implement a novel energy-efficient machine-learning (ML) technique. For a hardware implementation of the RBM, an essential…

In Valence Change Memory (VCM) cells, the conductance of an insulating switching layer is reversibly modulated by creating and redistributing point defects under an external field. Accurate simulations of the switching dynamics of these…

We survey the current state of phase change memory (PCM), a non-volatile solid-state memory technology built around the large electrical contrast between the highly-resistive amorphous and highly-conductive crystalline states in so-called…

Chalcogenide phase change materials (PCMs) have been extensively applied in data storage, and they are now being proposed for high resolution displays, holographic displays, reprogrammable photonics, and all-optical neural networks. These…

The massive parallel approach of neuromorphic circuits leads to effective methods for solving complex problems. It has turned out that resistive switching devices with a continuous resistance range are potential candidates for such…

The paper presents the simulation studies of 10 $\mu$m pitch microstrips on a fully depleted monolithic active CMOS technology and describes their potential to provide a new and cost-effective solution for particle tracking and timing…

Traditional DRAM-based main memory systems face several challenges with memory refresh overhead, high latency, and low throughput as the industry moves towards smaller DRAM cells. These issues have been exacerbated by the emergence of…

Autonomous labs enable the integration of automated experiment execution, data analysis and decision making. The main challenge remains the integration of diverse data streams from multiple instruments, where the data is often heterogeneous…