相关论文: Monolithic TCAD Simulation of Phase-Change Memory …

In this paper, we present a new compact model of threshold switching devices which is suitable for efficient circuit-level simulations. First, a macro model, based on a compact transistor based circuit, was implemented in LTSPICE. Then, a…

Soft, stretchable organic field-effect transistors (OFETs) can provide powerful on-skin signal conditioning, but current fabrication methods are often material-specific: each new polymer semiconductor (PSC) requires a tailored process. The…

Computer simulations have long been key to understanding and designing phase-change materials (PCMs) for memory technologies. Machine learning is now increasingly being used to accelerate the modelling of PCMs, and yet it remains…

Traditional transistors based on complementary metal-oxide-semiconductor (CMOS) and metal-oxide-semiconductor field-effect transistors (MOSFETs) are facing significant limitations as device scaling reaches the limits of Moore's Law. These…

Volatile threshold resistive switching and neuronal oscillations in phase-change materials, specifically those undergoing metal-to-insulator transitions, offer unique attributes such as fast and low-field volatile switching, tunability, and…

Brain-inspired non-Boolean computing offers intrinsic error tolerance and parallelism, but its practical deployment is limited by the lack of compact, energy-efficient spiking hardware compatible with large-scale integration. Mott…

Memristor devices are crucial for developing neuromorphic computers and next-generation memory technologies. In this work, we provide a comprehensive modelling tool for simulating static DC reading operations of memristor crossbar arrays…

Phase-change memory (PCM), a promising candidate for next-generation non-volatile memories, exploits quenched glassy and thermodynamically stable crystalline states as reversibly switchable state variables. We demonstrate PCM functions…

A self-consistent model for the simulation of Ge-rich Ge$_2$Sb$_2$Te$_5$ phase change memories is presented. Combining the multi-phase field model and a phase-aware electro-thermal solver, it reproduces the multi-physics behavior of the…

Electrically tunable optical devices present diverse functionalities for manipulating electromagnetic waves by leveraging elements capable of reversibly switching between different optical states. This adaptability in adjusting their…

Non-volatile Memory (NVM) technologies present a promising alternative to traditional volatile memories such as SRAM and DRAM. Due to the limited availability of real NVM devices, simulators play a crucial role in architectural exploration…

Phase-change materials (PCMs) are the subject of considerable interest because they have been recognized as potential active layers for next-generation non-volatile memory devices, known as Phase Change Random Access Memories (PRAMs). By…

Valence change memory (VCM) cells based on SrTiO$_3$ (STO), a perovskite oxide, are a promising type of emerging memory device. While the operational principle of most VCM cells relies on the growth and dissolution of one or multiple…

Phase-change memory (PCM) is a scalable and low latency non-volatile memory (NVM) technology that has been proposed to serve as storage class memory (SCM), providing low access latency similar to DRAM and often approaching or exceeding the…

Scaling of two dimensional six-contact phase change devices that can perform toggle logic operations is analyzed through 2D electrothermal simulations with dynamic materials modeling, integrated with CMOS access circuitry. Toggle…

Phase change memory has been developed into a mature technology capable of storing information in a fast and non-volatile way, with potential for neuromorphic computing applications. However, its future impact in electronics depends…

Two-dimensional (2D) phase-change materials (PCMs) with moderate transition barriers and distinctly contrasting properties are highly desirable for multifunctional devices, yet such systems remain scarce. Using first-principles…

Semiconducting monolayer of 2D material are able to concatenate multiple interesting properties into a single component. Here, by combining opto-mechanical and electronic measurements, we demonstrate the presence of a partial 2H-1T phase…

Phase change memories (PCM) is an emerging type of non-volatile memory that has shown a strong presence in the data-storage market. This technology has recently attracted significant research interest in the development of non-Von Neumann…

This paper presents a unified optimization framework for phase change material (PCM) based cooling systems. Thermal management is critical in applications such as photovoltaic (PV) modules, battery packs, and power electronics, where…