相关论文: Atomistic modelling of the channeling process with…
A newly developed code, implemented as a part of the \MBNExplorer package \cite{MBN_ExplorerPaper,MBN_ExplorerSite} to simulate trajectories of an ultra-relativistic projectile in a crystalline medium, is presented. The motion of a…
We review achievements made in recent years in the field of numerical modeling of ultra-relativistic projectiles propagation in oriented crystals, radiation emission and related phenomena. This topic is highly relevant to the problem of…
We report on the results of theoretical simulations of the electron channeling in a bent silicon crystal. The dynamics of ultra-relativistic electrons in the crystal is computed using the newly developed part [1] of the MBN Explorer package…
The method of relativistic molecular dynamics is applied for accurate computational modelling and numerical analysis of the channelling phenomena for 855 MeV electrons in bent oriented silicon (111) crystal. Special attention is devoted to…
Results of numerical simulations of electron channeling and emission spectra are reported for straight and uniformly bent silicon crystal. The projectile trajectories are computed using the newly developed module [1] of the MBN Explorer…
This paper presents a quantitative analysis of the impact of inelastic collisions of ultra-relativistic electrons and positrons, passing through oriented crystalline targets, on the channeling efficiency and on the intensity of the…
A periodically bent Si crystal is shown to efficiently serve for producing highly monochromatic radiation in a gamma-ray energy spectral range. A short-period small-amplitude bending yields narrow undulator-type spectral peaks in radiation…
The results of numerical simulation of the channeling of ultra-relativistic 270 MeV electrons and positrons in a diamond crystal are presented. Using the MBN Explorer package, the trajectories of the have been determined of the particles…
Computational modelling of passage of high-energy electrons through crystalline media is carried out by means of the relativistic molecular dynamics. The results obtained are compared with the experimental data for 855 MeV electron beam…
Preliminary results of numerical simulations of electron and positron channeling and emission spectra are reported for straight, uniformly bent and periodically bent silicon crystal. The projectile trajectories are computed using the newly…
In this paper we present the results of a systematic numerical analysis of the channeling properties of electrons and positrons in oriented straight and periodically bent diamond(110) crystals. We analyse dependence of the intensity of the…
When a high-energy electrons move in a crystal along one of the crystallographic planes the phenomenon of planar channeling is possible, in which the particles move in channels formed by the continuous potential of crystalline planes. Such…
Channeling and radiation are studied for the relativistic electrons and positrons passing through a Si crystal periodically bent with a small amplitude and a short period. Comprehensive analysis of the channeling process for various bending…
We predict peculiar changes in spectral distributions of radiation emitted by ultra-relativistic positrons and electrons in periodically bent crystals with variation of the bending amplitude. It is shown that the changes, being sensitive to…
This paper reports on a comprehensive study of an ultra-relativistic positron beam deflection by an oriented quasi-mosaic crystal. The analysis was carried out for the positron energy of 530 MeV incident on the quasi-mosaic bent Si(111)…
This paper discusses the undulator radiation emitted by high-energy positrons during planar channeling in periodically bent crystals. We demonstrate that the construction of the undulator for positrons with energies of 10 GeV and above is…
This paper discusses the undulator radiation emitted by high-energy positrons during planar channeling in periodically bent crystals. We demonstrate that the construction of the undulator for positrons with energies of 10 GeV and above is…
This paper presents a quantitative analysis of the impact of inelastic collisions with atoms in a crystalline environment on the channeling efficiency and intensity of the channeling radiation for high-energy electrons and positrons passing…
In this paper, theoretical and numerical analyses are conducted of the profiles of the planar (-110) crystallographic direction in the diamond layer doped with boron atoms. The planar profiles for periodic doping following several ideal…
A comprehensive numerical investigation has been conducted on the angular distribution and spectrum of radiation emitted by 855 MeV electron and positron beams while traversing a 'quasi-mosaic' bent silicon (111) crystal. This interaction…