相关论文: Stacking-induced Chern insulator
Chern insulators, which are the lattice analogs of the quantum Hall states, can potentially manifest high-temperature topological orders at zero magnetic field to enable next-generation topological quantum devices. To date, integer Chern…
We investigate topological phases of bilayer graphene subject to antiferromagnetic exchange field, interlayer bias, and irradiated by light. We discover that at finite bias and light intensity the system transitions into a previously…
We investigate an effective model of proximity modified graphene (or symmetrylike materials) with broken time-reversal symmetry. We predict the appearance of quantum anomalous Hall phases by computing bulk band gap and Chern numbers for…
Hexagonally patterned two-dimensional $p$-type semiconductor systems are quantum simulators of graphene with strong and highly tunable spin-orbit interactions. We show that application of purely in-plane magnetic fields, in combination with…
A Chern insulator (quantum anomalous Hall insulator) phase is demonstrated to exist in a typical semi-Dirac system, the TiO2/VO2 heterostructure. By combining first-principles calculations with Wannier-based tight-binding model, we…
Large Chern number phases in a Haldane model become possible if there is a multiplication of Dirac points in the underlying graphene model. This is realized by considering long-distance hopping integrals. Through variation of these…
Using first principles methods, we investigate topological phase transitions as a function of exchange field in a Bi(111) bilayer. Evaluation of the spin Chern number for different magnitudes of the exchange field reveals that when the time…
We demonstrate that a Chern insulator could be realized on a real two-dimensional lattice of an organic Dirac semimetal {\alpha}-(BEDT-TTF)2I3 by introducing potential and magnetic modulations in a unit cell. It is a…
We investigate Floquet-driven topological phase transitions in an AB-stacked bilayer Haldane lattice with tunable intralayer hopping anisotropy. By combining interlayer hybridization, Haldane flux, and off-resonant circularly polarized…
Two-dimensional (2D) semi-Dirac materials are characterized by a quadratic dispersion in one direction and a linear dispersion along the orthogonal direction. We study the topological phase transition in such 2D systems in the presence of…
We analyze the non-Hermitian Haldane model where the spin-orbit interaction is made non-Hermitian. The Dirac mass becomes complex. We propose to realize it by an $LC$ circuit with operational amplifiers. A topological phase transition is…
Here we study the systematic evolution of the topological properties of a Chern insulator in presence of an electronic dispersion that can be tuned smoothly from being Dirac-like till a semi-Dirac one and beyond. The band structure under…
Chern insulator systems are realizable in numerous physical systems and can support robust nonreciprocal transmission of energy. A routing functionality constructed from two counter-oriented Chern insulator regions, using coupled Haldane…
We study the electronic structures of ABA (Bernal) stacked multilayer graphenes in uniform perpendicular electric field, and show that the interplay of the trigonal warping and the potential asymmetry gives rise to a number of emergent…
Higher-order topological phases and real topological phases are two emerging topics in topological states of matter, which have been attracting considerable research interest. However, it remains a challenge to find realistic materials that…
Based on the full Hamiltonian of bilayer graphene, phase transitions are realized by the change of the in-plane magnetic field and the electrical bias in bilayer graphene. We show that the engineering of Chern numbers of four bands is…
We show that the valley Chern number of the low energy band in twisted double bilayer graphene can be tuned through two successive topological transitions, where the direct bandgap closes, by changing the electric field perpendicular to the…
The properties displayed by graphene at van Hove singularities (VHS) have caught significant attention in recent years. The emergence of exotic quantum states at these singularities prompts investigations on their evolution within the realm…
In orbital Chern insulators, the chemical potential acts as a tuning knob to reverse chirality in dissipationless edge currents, enabling electric-field control of magnetic order-key for future quantum electronics. Despite the rise of…
We derive a general relation between the stacking vector ${\bf u}$ describing the relative shift of two layers of bilayer graphene and the Chern index. We find $C = \nu - \text{sign}\left(|V_{AB}|-|V_{BA}|\right)$, where $\nu$ is a valley…