相关论文: Spin-orbit torque switching of magnetic tunnel jun…

A new device structure for spin transfer torque based magnetic random access memory is proposed for on-chip memory applications. Our device structure exploits spin Hall effect to create a differential memory cell that exhibits fast and…

In the last few years, some ideas of electric manipulations in ferromagnetic heterostructures have been proposed for developing next generation spintronic devices. Among them, the magnetization switching driven by spin-orbit torque (SOT) is…

This paper introduces the concept of spin-orbit-torque-MRAM (SOT-MRAM) based physical unclonable function (PUF). The secret of the PUF is stored into a random state of a matrix of perpendicular SOT-MRAMs. Here, we show experimentally and…

Magnetic van der Waals (vdW) materials have attracted massive attention because of their academic interest and application potential for the past few years. Its main advantage is the intrinsic two-dimensionality, enabling much smaller…

The application of Magnetic Random-Access Memory (MRAM) in computing-in-memory (CIM) has gained significant attention. However, existing designs often suffer from high energy consumption due to their reliance on complex analog circuits for…

Spin-orbit torque (SOT) driven deterministic control of the magnetization state of a magnet with perpendicular magnetic anisotropy (PMA) is key to next generation spintronic applications including non-volatile, ultrafast, and energy…

Memristors are non-volatile nano-resistors. Their resistance can be tuned by applied currents or voltages and set to a large number of levels between two limit values. Thanks to these properties, memristors are ideal building blocks for a…

Synaptic memory is considered to be the main element responsible for learning and cognition in humans. Although traditionally non-volatile long-term plasticity changes have been implemented in nanoelectronic synapses for neuromorphic…

The possible use of spin and magnets in place of charge and capacitors to store and process information is well known. Magnetic tunnel junctions are being widely investigated and developed for magnetic random access memories. These are two…

We demonstrate spin-orbit torque (SOT) switching of amorphous CoTb single layer films with perpendicular magnetic anisotropy (PMA). The switching sustains even the film thickness is above 10 nm, where the critical switching current density…

Non-volatile memristors offer a salient platform for artificial neural network (ANN), but the integration of different function blocks into one hardware system remains challenging. Here we demonstrate the implementation of brain-like…

In-memory computing is a promising approach to addressing the processor-memory data transfer bottleneck in computing systems. We propose Spin-Transfer Torque Compute-in-Memory (STT-CiM), a design for in-memory computing with Spin-Transfer…

We suggest coherent switching of canted antiferromagnetic (AFM) spins using spin-orbit torque (SOT) in small magnet. The magnetic system of orthoferrite features biaxial easy anisotropy and the Dzyaloshinskii Moriya interaction, which is…

Magnetic tunnel junctions (MTJs) are elementary units of magnetic memory devices. For high-speed and low-power data storage and processing applications, fast reversal by an ultrashort laser pulse is extremely important. We demonstrate…

Recent studies on the magneto-transport properties of topological insulators (TI) have attracted great attention due to the rich spin-orbit physics and promising applications in spintronic devices. Particularly the strongly spin-moment…

Neuromorphic computing, which seeks to replicate the brain's ability to process information, has garnered significant attention due to its potential to achieve brain-like computing efficiency and human cognitive intelligence. Spin-orbit…

The phenomenon of spin transfer torque (STT) has attracted a great deal of interests due to its promising prospects in practical spintronic devices. In this paper, we report a theoretical investigation of STT in a noncollinear magnetic…

The relative contributions of in-plane (damping-like) and out-of-plane (field-like) spin-transfer-torques in the magnetization switching of out-of-plane magnetized magnetic tunnel junctions (pMTJ) has been theoretically analyzed using the…

We predict an unconventional spin-transfer torque (STT) acting on the magnetization of a free ferromagnetic (F) layer within N/TI/F vertical heterostructures which originates from strong spin-orbit coupling (SOC) on the surface of a…

Electrical manipulation of magnetization is essential for integration of magnetic functionalities such as magnetic memories and magnetic logic devices into electronic circuits. The current induced spin-orbit torque (SOT) in heavy…