相关论文: Evidence of boron pairs in highly boron laser dope…
In laser micromachining, the ablation threshold (minimum fluence required to cause ablation) is a key performance parameter and overall indicator of the efficiency of material removal. For pulsed laser micromachining, this important…
We report topography-free materials contrast imaging on a nano-fabricated Boron-doped Silicon sample measured with a Near-field Scanning Microwave Microscope over a broad frequency range. The Boron doping was performed using the Focus Ion…
Multiple dopant configurations of Te impurities in close vicinity in silicon are investigated using photoelectron spectroscopy, photoelectron diffraction, and Bloch wave calculations. The samples are prepared by ion implantation followed by…
The effect of doping with Ti, Ta, SiC in complex with synthesis temperature on the amount and distribution of structural inhomogeneities in MgB2 matrix of high-pressuresynthesized-materials (2 GPa) which can influence pining: higher borides…
Ab initio density-functional theory study suggests that pillared Li-dispersed boron carbide nanotubes is capable of storing hydrogen with a mass density higher than 6.0 weight% and a volumetric density higher than 45 g/L. The boron…
We have investigated field evaporation of grounded arsenic (As) doped silicon (Si) clusters consist of 52 atoms with density functional theory to mimic Si nano structures of hundreds of nanometers long standing on a substrate. Six cluster…
This study presents a detailed quantum chemical investigation of the electronic and excited-state properties of syn- and anti-isomers of the borane cluster B18H22 and their sulfur-doped derivatives. Using the PB86/def2-SVP level of theory…
A simple mass spectrometric method has been developed to quantify dopant levels in heteronuclear clusters in the gas phase. The method is demonstrated with reference to quantification of the water content in supersonic beams of water-doped…
Elementary semiconductors are rare and attractive, especially for low-dimensional materials. Unfortunately, most of boron nanostructures were found to be metallic, despite of their typical semiconducting bulk structure. Herein, we propose a…
The present {\em ab initio} study shows that in BaBiO$_3$, Bi$^{3+}$ sites can trap two holes from the valence band to form Bi$^{5+}$ cations. The trapping is accompanied by large local lattice distortions, therefore the composite particle…
The silicon vacancy ($V_{Si}$) in 4H-SiC at its cubic site (V2-center) has shown significant promise for quantum technologies, due to coherent spin states, the mature material system, and stable optical emission. In these SiC-based…
The polymer (PBDTTT-c) p-doped with the molecular dopant (Mo(tfd-COCF3)3) exhibits a decline in transport properties at high doping concentrations, which limits the performance attainable through organic semiconductor doping. Scanning…
In this study we explore the possibility of using the process of electron-positron pair creation in strong laser fields as a tool for measuring the intensity of the corresponding laser radiation. In the initial state we consider either free…
The amorphous conducting carbon films have been prepared at three different preparation temperatures with different boron-doping levels. The structural and transport properties of the same have been studied. X-ray diffraction measurements…
The experimental realization of high-temperature superconductivity in compressed hydrides H$_3$S and LaH$_{10}$ at high pressures over 150 GPa has aroused great interest in reducing the stabilization pressure of superconducting hydrides.…
B-doped $\delta$-layers were fabricated in Si(100) using BCl$_{3}$ as a dopant precursor in ultrahigh vacuum. BCl$_{3}$ adsorbed readily at room temperature, as revealed by scanning tunneling microscopy (STM) imaging. Annealing at elevated…
Successive ionic layer adsorption and reaction (SILAR) method is based on the adsorption and reaction of the ions in the cationic solution and the ionic solution, respectively. This method is simple, inexpensive, large-scale deposition,…
The arrangement of B~atoms in a doped Si(111)-$(\sqrt{3}\times\sqrt{3})R30^{\circ}$:B system was studied using near-edge x-ray absorption fine structure (NEXAFS). Boron atoms were deposited via segregation from the bulk by flashing the…
Liquid-argon scintillation detectors are used in fundamental physics experiments and are being considered for security applications. Previous studies have suggested that the addition of small amounts of xenon dopant improves performance in…
The production of a highly-polarized positron beam via nonlinear Breit-Wheeler processes during the interaction of an ultraintense circularly polarized laser pulse with a longitudinally spin-polarized ultrarelativistic electron beam is…