相关论文: Colossal piezoresistance in narrow-gap Eu5In2Sb6
Piezoresistance is the change in the electrical resistance, or more specifically the resistivity, of a solid induced by an applied mechanical stress. The origin of this effect in bulk, crystalline materials like Silicon, is principally a…
The piezoresistive response of granular metals under uniaxial strain is strongly dependent on the concentration of the conducting phase. Here we show that the piezoresistive anisotropy is reduced as the system approaches its percolation…
Metal/semiconductor hybrids are artificially created structures presenting novel properties not exhibited by either of the component materials alone. Here we present a giant piezoresistance effect in a hybrid formed from silicon and…
We report low-temperature resistance measurements in a modulation-doped, (311)A GaAs two-dimensional hole system as a function of applied in-plane strain. The data reveal a strong but anisotropic piezoresistance whose magnitude depends on…
Recent progress in the understanding of the collective behavior of electrons and ions have revealed new types of ferroic orders beyond ferroelectricity and ferromagnetism, such as the ferroaxial state. The latter retains only rotational…
Piezoelectrics are materials that linearly deform in response to an applied electric field. As a fundamental prerequisite, piezoelectric material must possess a non centrosymmetric crystal structure. For more than a century, this remains…
The giant piezoresistance (PZR) previously reported in silicon nanowires is experimentally investigated in a large number of surface depleted silicon nano- and micro-structures. The resistance is shown to vary strongly with time due to…
A number of evidences suggests that thick-film resistors are close to a metal-insulator transition and that tunneling processes between metallic grains are the main source of resistance. We consider as a minimal model for description of…
Materials exhibiting electronic inhomogeneities at the nanometer scale have enormous potential for applications. Magnetic polarons are one such type of inhomogeneity which link the electronic, magnetic and lattice degrees of freedom in…
A giant, anomalous piezo-response of fully-depleted silicon-on-insulator (FD-SOI) devices under mechanical stress is demonstrated using impedance spectroscopy. This piezo-response strongly depends on the measurement frequency, $\omega$, and…
With a surge of interest in spintronics, the manipulation and detection of colossal magnetoresistance in quasi-two-dimensional layered magnetic materials have become a key focus, driven by their relatively scarce occurrence compared to…
Resistivity measurements are widely exploited to uncover electronic excitations and phase transitions in metallic solids. While single crystals are preferably studied to explore crystalline anisotropies, these usually cancel out in…
High-pressure electrical resistivity measurements up to 3.0GPa have been performed on EuFe2As2 single crystals with residual resistivity ratios RRR=7 and 15. At ambient pressure, a magnetic / structural transition related to FeAs-layers is…
In this paper, we study the piezoresistive response and its anisotropy for a bond percolation model of granular metals. Both effective medium results and numerical Monte Carlo calculations of finite simple cubic networks show that the…
Recent reports of colossal negative magnetoresistance (CMR) in a few magnetic semimetals and semiconductors have attracted attention, because these materials are devoid of the conventional mechanisms of CMR such as mixed valence, double…
Measurements of the resistivity anisotropy can provide crucial information about the electronic structure and scattering processes in anisotropic and low-dimensional materials, but quantitative measurements by conventional means often…
The room-temperature longitudinal piezoresistance of n-type and p-type crystalline silicon along selected crystal axes is investigated under uniaxial compressive stresses up to 3 GPa. While the conductance ($G$) of n-type silicon eventually…
The resistance of chemically synthesized polypyrrole (PPy) thin films is investigated as a function of the pressure of various gases as well as of the film thickness. A physical, piezoresistive response is found to coexist with a chemical…
Resistance of certain (conductive and otherwise isotropic) ferromagnets turns out to exhibit anisotropy with respect to the direction of magnetisation: R$_\parallel$ different from R$_\perp$ with reference to the electric current direction.…
A wide variety of apparently contradictory piezoresistance (PZR) behaviors have been reported in p-type silicon nanowires (SiNW), from the usual positive bulk effect to anomalous (negative) PZR and giant PZR. The origin of such a range of…