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相关论文: Enhanced Valley Splitting in Si Layers with Oscill…

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Using magnetocapacitance data, we directly determine the chemical potential jump in a strongly correlated 2D electron system in silicon when the filling factor traverses the valley gap at \nu=1 and \nu=3. The data yield a valley gap that is…

凝聚态物理 · 物理学 2007-05-23 V. S. Khrapai , A. A. Shashkin , V. T. Dolgopolov

The relationship between Breit-Wigner distribution as an underlying basis for decaying unstable quantum systems and GSI experiment (anomaly) has not been addressed properly in the literatures. We show that quantum beats can be obtained…

高能物理 - 唯象学 · 物理学 2019-10-07 M. S. Hosseini , S. A. Alavi

In bulk silicon, intervalley electronic interference has been shown to lead to strong oscillations in the exchange coupling between impurity electronic wavefunctions, posing a serious manufacturability problem for proposed quantum…

介观与纳米尺度物理 · 物理学 2007-05-23 S. N. Coppersmith , Seungwon Lee , Paul von Allmen

We present a systematic and realistic simulation for single and double phosphorous donors in a silicon-based quantum computer design. A two-valley equation is developed to describe the ground state of phosphorous donors in strained silicon…

介观与纳米尺度物理 · 物理学 2009-11-11 Angbo Fang , Yia-Chung Chang , J. R. Tucker

Increasing the valley splitting in Si-based heterostructures is critical for improving the performance of semiconductor qubits. This paper demonstrates that the two low-energy conduction band valleys are not independent parabolic bands.…

材料科学 · 物理学 2025-12-29 S Akbar Jafari , Hendrik J Bluhm , David P Divincenzo

The variational quantum eigensolver (VQE) is a hybrid quantum-classical algorithm designed for current and near-term quantum devices. Despite its initial success, there is a lack of understanding involving several of its key aspects. There…

量子物理 · 物理学 2023-03-22 Manpreet Singh Jattana , Fengping Jin , Hans De Raedt , Kristel Michielsen

We present here results of atomistic theory of electrons confined by metallic gates in a single layer of transition metal dichalcogenides. The electronic states are described by the tight-binding model and computed using a computational box…

介观与纳米尺度物理 · 物理学 2020-01-22 Maciej Bieniek , Ludmila Szulakowska , Pawel Hawrylak

Electrical transport in double quantum dots (DQDs) illuminates many interesting features of the dots' carrier states. Recent advances in silicon quantum information technologies have renewed interest in the valley states of electrons…

介观与纳米尺度物理 · 物理学 2017-11-15 Justin K. Perron , Michael J. Gullans , Jacob M. Taylor , M. D. Stewart, , Neil M. Zimmerman

Strong spin-orbit coupling and inversion symmetry breaking in transition metal dichalcogenide monolayers yield the intriguing effects of valley-dependent optical selection rules. As such, it is possible to substantially polarize valley…

Sixfold-degenerate valleys in Si have attracted considerable attention for valleytronics application. Using optical pump-terahertz (THz) probe spectroscopy, we study the dynamics of valley polarization in bulk Si(001) at room temperature.…

Optical properties of semiconducting monolayer transition metal dichalcogenides have received a lot of attention in recent years, following the discovery of the valley selective optical population of either $K_{+}$ or $ K_{-}$ valleys at…

其他凝聚态物理 · 物理学 2022-05-17 Andrey Geondzhian , Angel Rubio , Massimo Altarelli

To describe multiple interacting fragmentation continua, we develop a method in which the vibrational channel functions obey outgoing wave Siegert boundary conditions. This paper demonstrates the utility of the Siegert approach, which uses…

原子物理 · 物理学 2009-11-07 Edward L. Hamilton , Chris H. Greene

The tunneling through an opaque barrier with a strong oscillating component is investigated. It is shown, that in the strong perturbations regime (in contrast to the weak one), higher perturbations rate does not necessarily improve the…

量子物理 · 物理学 2007-05-23 Er'el Granot

Electrons confined in Si quantum dots possess orbital, spin, and valley degrees of freedom (d.o.f.). We perform Landau-Zener-Stuckelberg-Majorana (LZSM) interferometry on a Si double quantum dot that is strongly coupled to a microwave…

介观与纳米尺度物理 · 物理学 2018-10-17 X. Mi , S. Kohler , J. R. Petta

Valleytronic materials, characterized by local extrema (valley) in their bands, and topological insulators have separately attracted great interest recently. However, the interplay between valleytronic and topological properties in one…

介观与纳米尺度物理 · 物理学 2018-08-27 Tong Zhou , Jiayong Zhang , Hua Jiang , Igor Zutic , Zhongqin Yang

Let ${\rm SI}_\beta(Q)$ be the semi-invariant ring of $\beta$-dimensional representations of a quiver $Q$. Suppose that $(Q,\beta)$ projects to another quiver with dimension vector $(Q',\beta')$ through an exceptional representation $E$. We…

交换代数 · 数学 2015-09-01 Jiarui Fei

We study theoretically nonlinear valley polarization dynamics of excitons in atom-thin semiconductors. The presence of significant polarization slows down valley relaxation due to an effective magnetic field resulting from exciton-exciton…

介观与纳米尺度物理 · 物理学 2022-07-20 M. A. Semina , M. M. Glazov , C. Robert , L. Lombez , T. Amand , X. Marie

Physical properties reflecting valley asymmetry of Landau levels in a biased bilayer graphene under magnetic field are discussed. Within the $4-$band continuum model with Hartree-corrected self-consistent gap and finite damping factor we…

介观与纳米尺度物理 · 物理学 2010-01-14 Masaaki Nakamura , Eduardo V. Castro , Balazs Dora

A phenomenological theory of exciton condensation in conditions of inhomogeneous excitation is proposed. The theory is applied to the study of the development of an exciton luminescence ring and the ring fragmentation at macroscopical…

介观与纳米尺度物理 · 物理学 2013-08-15 Andrey A. Chernyuk , Volodymyr I. Sugakov

Spin-valley coupling in monolayer transition metal dichalcogenides gives rise to valley polarization and coherence effect, limited by intervalley scattering caused by exciton-phonon, exciton-impurity, and electron-hole exchange interaction…

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